Ultrafast Surface Carrier Dynamics in the Topological Insulator Bi2 Te3 M Hajlaoui, E Papalazarou, J Mauchain, G Lantz, N Moisan, D Boschetto, ...
Nano letters 12 (7), 3532-3536, 2012
272 2012 Altermagnetic lifting of Kramers spin degeneracy J Krempaský, L Šmejkal, SW D’souza, M Hajlaoui, G Springholz, ...
Nature 626 (7999), 517-522, 2024
218 2024 Evidence for flat bands near the Fermi level in epitaxial rhombohedral multilayer graphene D Pierucci, H Sediri, M Hajlaoui, JC Girard, T Brumme, M Calandra, ...
ACS nano 9 (5), 5432-5439, 2015
150 2015 Tuning a Schottky barrier in a photoexcited topological insulator with transient Dirac cone electron-hole asymmetry M Hajlaoui, E Papalazarou, J Mauchain, L Perfetti, A Taleb-Ibrahimi, ...
Nature communications 5 (1), 3003, 2014
132 2014 HERMES: a soft X-ray beamline dedicated to X-ray microscopy R Belkhou, S Stanescu, S Swaraj, A Besson, M Ledoux, M Hajlaoui, ...
Journal of synchrotron radiation 22 (4), 968-979, 2015
95 2015 Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure H Sediri, D Pierucci, M Hajlaoui, H Henck, G Patriarche, YJ Dappe, ...
Scientific reports 5 (1), 16465, 2015
82 2015 High electron mobility in epitaxial trilayer graphene on off-axis SiC (0001) M Hajlaoui, H Sediri, D Pierucci, H Henck, T Phuphachong, MG Silly, ...
Scientific reports 6 (1), 18791, 2016
38 2016 Time resolved ultrafast ARPES for the study of topological insulators: The case of Bi2 Te3 M Hajlaoui, E Papalazarou, J Mauchain, Z Jiang, I Miotkowski, YP Chen, ...
The European Physical Journal Special Topics 222, 1271-1275, 2013
37 2013 Self-organized metal-semiconductor epitaxial graphene layer on off-axis 4H-SiC (0001) D Pierucci, H Sediri, M Hajlaoui, E Velez-Fort, YJ Dappe, MG Silly, ...
Nano Research 8, 1026-1037, 2015
27 2015 Surface Effects on the Mott-Hubbard Transition in Archetypal G Lantz, M Hajlaoui, E Papalazarou, VLR Jacques, A Mazzotti, M Marsi, ...
Physical Review Letters 115 (23), 236802, 2015
25 2015 Scanning photoelectron spectro‐microscopy: a modern tool for the study of materials at the nanoscale P Zeller, M Amati, H Sezen, M Scardamaglia, C Struzzi, C Bittencourt, ...
physica status solidi (a) 215 (19), 1800308, 2018
19 2018 Circular dichroism and superdiffusive transport at the surface of BiTeI J Mauchain, Y Ohtsubo, M Hajlaoui, E Papalazarou, M Marsi, ...
Physical Review Letters 111 (12), 126603, 2013
18 2013 Temperature dependence of relativistic valence band splitting induced by an altermagnetic phase transition M Hajlaoui, S Wilfred D'Souza, L Šmejkal, D Kriegner, G Krizman, ...
Advanced Materials 36 (31), 2314076, 2024
15 2024 Oxidation of the 8× 8-reconstructed β-Si3N4 (0 0 0 1) surface: A photoemission study R Flammini, A Bellucci, F Wiame, R Belkhou, M Carbone, DM Trucchi, ...
Applied Surface Science 355, 93-97, 2015
8 2015 Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures M Hajlaoui, S Ponzoni, M Deppe, T Henksmeier, DJ As, D Reuter, ...
Scientific reports 11 (1), 19081, 2021
7 2021 Observation of Weyl and Dirac fermions at smooth topological Volkov-Pankratov heterojunctions J Bermejo-Ortiz, G Krizman, R Jakiela, Z Khosravizadeh, M Hajlaoui, ...
Physical Review B 107 (7), 075129, 2023
5 2023 A novel ferroelectric Rashba semiconductor G Krizman, T Zakusylo, L Sajeev, M Hajlaoui, T Takashiro, M Rosmus, ...
Advanced Materials 36 (13), 2310278, 2024
4 2024 Valley-polarized quantum Hall phase in a strain-controlled Dirac system G Krizman, J Bermejo-Ortiz, T Zakusylo, M Hajlaoui, T Takashiro, ...
Physical Review Letters 132 (16), 166601, 2024
3 2024 Persistence of structural distortion and bulk band Rashba splitting in SnTe above its ferroelectric critical temperature F Chassot, A Pulkkinen, G Kremer, T Zakusylo, G Krizman, M Hajlaoui, ...
Nano Letters 24 (1), 82-88, 2023
2 2023 Erratum: Circular Dichroism and Superdiffusive Transport at the Surface of BiTeI [Phys. Rev. Lett. 111, 126603 (2013)] J Mauchain, Y Ohtsubo, M Hajlaoui, E Papalazarou, M Marsi, ...
Physical Review Letters 112 (2), 029901, 2014
2 2014