Stimulating Oxide Heterostructures: A Review on Controlling SrTiO3 ‐Based Heterointerfaces with External Stimuli DV Christensen, F Trier, W Niu, Y Gan, Y Zhang, TS Jespersen, Y Chen, ...
Advanced Materials Interfaces 6 (21), 1900772, 2019
72 2019 Giant Tunability of the Two-Dimensional Electron Gas at the Interface of γ-Al2 O3 /SrTiO3 W Niu, Y Zhang, Y Gan, DV Christensen, MV Soosten, EJ Garcia-Suarez, ...
Nano letters 17 (11), 6878-6885, 2017
61 2017 The emergence of magnetic ordering at complex oxide interfaces tuned by defects DS Park, AD Rata, IV Maznichenko, S Ostanin, YL Gan, S Agrestini, ...
Nature communications 11 (1), 3650, 2020
54 2020 Diluted oxide interfaces with tunable ground states Y Gan, DV Christensen, Y Zhang, H Zhang, D Krishnan, Z Zhong, W Niu, ...
Advanced Materials 31 (10), 1805970, 2019
41 2019 Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces W Niu, Y Gan, Y Zhang, D Valbjørn Christensen, M von Soosten, X Wang, ...
Applied Physics Letters 111 (2), 2017
25 2017 Thermal conductivity of Gex Sb(As)y Se100‐x‐y glasses measured by Raman scattering spectra YL Gan, L Wang, XQ Su, SW Xu, X Shen, RP Wang
Journal of Raman Spectroscopy 45 (5), 377-382, 2014
24 2014 Large Linear Magnetoresistance of High‐Mobility 2D Electron System at Nonisostructural γ‐Al2 O3 /SrTiO3 Heterointerfaces W Niu, Y Gan, Z Wu, X Zhang, Y Wang, Y Chen, L Wang, Y Xu, L He, Y Pu, ...
Advanced Materials Interfaces 8 (21), 2101235, 2021
23 2021 Gate-tunable Rashba spin-orbit coupling and spin polarization at diluted oxide interfaces Y Gan, Y Zhang, DV Christensen, N Pryds, Y Chen
Physical Review B 100 (12), 125134, 2019
22 2019 Creation of ZnS nanoparticles by laser ablation in water YL Gan, L Wang, RP Wang
Applied Physics A 122, 1-5, 2016
21 2016 Light‐Induced Giant Rashba Spin–Orbit Coupling at Superconducting KTaO3 (110) Heterointerfaces Y Gan, F Yang, L Kong, X Chen, H Xu, J Zhao, G Li, Y Zhao, L Yan, ...
Advanced Materials 35 (25), 2300582, 2023
19 2023 Electrolyte gate controlled metal-insulator transitions of the CaZrO3/SrTiO3 heterointerface W Niu, Y Chen, Y Gan, Y Zhang, X Zhang, X Yuan, Z Cao, W Liu, Y Xu, ...
Applied Physics Letters 115 (6), 2019
16 2019 Fully Optical Modulation of the Two-Dimensional Electron Gas at the γ-Al2 O3 /SrTiO3 Interface W Niu, YW Fang, R Liu, Z Wu, Y Chen, Y Gan, X Zhang, C Zhu, L Wang, ...
The Journal of Physical Chemistry Letters 13 (13), 2976-2985, 2022
14 2022 Metallic conduction and ferromagnetism in MAl2O4/SrTiO3 spinel/perovskite heterostructures (M= Fe, Co, Ni) Y Zhang, Y Gan, H Zhang, H Zhang, P Norby, B Shen, J Sun, Y Chen
Applied Physics Letters 113 (26), 2018
13 2018 A broad-spectrum gas sensor based on correlated two-dimensional electron gas Y Hong, L Wei, Q Zhang, Z Deng, X Liao, Y Zhou, L Wang, T Li, J Liu, ...
Nature communications 14 (1), 8496, 2023
12 2023 Large Optical Tunability of 5d 2D Electron Gas at the Spinel/Perovskite γ‐Al2 O3 /KTaO3 Heterointerface S Qi, H Zhang, J Zhang, Y Gan, X Chen, B Shen, Y Chen, Y Chen, J Sun
Advanced Materials Interfaces 9 (20), 2200103, 2022
11 2022 Nanoscale patterning of electronic devices at the amorphous LaAlO3/SrTiO3 oxide interface using an electron sensitive polymer mask AV Bjørlig, M von Soosten, R Erlandsen, RT Dahm, Y Zhang, Y Gan, ...
Applied Physics Letters 112 (17), 2018
10 2018 Effect of Sr-doping of LaMnO3 spacer on modulation-doped two-dimensional electron gases at oxide interfaces YZ Chen, YL Gan, DV Christensen, Y Zhang, N Pryds
Journal of Applied Physics 121 (9), 2017
10 2017 AV Bjørlig, DJ Carrad, GEDK Prawiroatmodjo, M Von Soosten, Y Gan, ...
Physical Review Materials 4 (12), 122001, 2020
8 2020 The effect of thermal annealing on (In2O3) 0.75 (Ga2O3) 0.1 (ZnO) 0.15 thin films with high mobility X Su, L Wang, Y Lu, Y Gan, R Wang
Vacuum 107, 191-194, 2014
8 2014 Charge‐Transfer‐Induced Multivalent States with Resultant Emergent Magnetism in Transition‐Metal Oxide Heterostructures W Niu, YW Fang, X Zhang, Y Weng, Y Chen, H Zhang, Y Gan, X Yuan, ...
Advanced Electronic Materials 7 (1), 2000803, 2021
7 2021 