Dr Igor Marko

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Stephen J SweeneyProfessor of Photonics and Nanotechnology, James Watt School of Engineering, University of GlasgowDirección de correo verificada de glasgow.ac.uk
Alfred AdamsProfessor of Physics, University of SurreyDirección de correo verificada de surrey.ac.uk
Konstanze HildUniversity of GlasgowDirección de correo verificada de glasgow.ac.uk
Gennadii P. YablonskiiDoctor of physico-mathematical sciences, Professor; Stepanov Institute of Physics of National Academy of Sciences of BelarusDirección de correo verificada de ifanbel.bas-net.by
Wolfgang StolzProfessor der Physik, Philipps-Universität MarburgDirección de correo verificada de physik.uni-marburg.de
Lutsenko EvgeniiAssistant ProfessorDirección de correo verificada de ifanbel.bas-net.by
Kerstin VolzProfessor of PhysicsDirección de correo verificada de staff.uni-marburg.de
Aleksey AndreevScientist and Company Director, A-Modelling Solutions Ltd.Dirección de correo verificada de amodelling.com
Alexander GurskiiProf. Dr., BSUIRDirección de correo verificada de bsuir.by
Eoin O'ReillyProfessor Emeritus, Tyndall National InstituteDirección de correo verificada de tyndall.ie
Johann Peter ReithmaierInstitute of Nanostructure Technologies and Analytics (INA), University of KasselDirección de correo verificada de ina.uni-kassel.de
Nadir HossainResearch Fellow, University of Toronto, CanadaDirección de correo verificada de utoronto.ca
Shamsul ArafinAssistant Professor, Ohio State UDirección de correo verificada de osu.edu
Shui-Qing (Fisher) YuUniversity of ArkansasDirección de correo verificada de uark.edu
Stanko TomicFInstP, Chair in Photonics, University of Salford, STFC Daresbury Laboratories, University of SurreyDirección de correo verificada de salford.ac.uk
Christopher A. BroderickRoyal Society-Research Ireland University Research Fellow, University College CorkDirección de correo verificada de ucc.ie
Vitaly ZubialevichTyndall National InstituteDirección de correo verificada de tyndall.ie
Yong-Hang ZhangProf., School of Electrical, Computer and Energy EngineeringDirección de correo verificada de asu.edu
Shane R JohnsonArizona State UniversityDirección de correo verificada de asu.edu
Abdullah AldukhayelPhysics department, science college, Majmaah universityDirección de correo verificada de mu.edu.sa

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Dr Igor Marko

Research Fellow, University of Glasgow, Glasgow

Dirección de correo verificada de glasgow.ac.uk - Página principal

photonics semiconductor physics laser physics


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Electrical injection Ga (AsBi)/(AlGa) As single quantum well laser P Ludewig, N Knaub, N Hossain, S Reinhard, L Nattermann, IP Marko, ... Applied Physics Letters 102 (24), 2013	182	2013
Carrier transport and recombination in p-doped and intrinsic 1.3 μm InAs∕ GaAs quantum-dot lasers IP Marko, NF Masse, SJ Sweeney, AD Andreev, AR Adams, N Hatori, ... Applied Physics Letters 87 (21), 2005	109	2005
Optical gain in GaAsBi/GaAs quantum well diode lasers IP Marko, CA Broderick, S Jin, P Ludewig, W Stolz, K Volz, JM Rorison, ... Scientific reports 6 (1), 28863, 2016	82	2016
Recombination mechanisms and band alignment of GaAs1− xBix/GaAs light emitting diodes N Hossain, IP Marko, SR Jin, K Hild, SJ Sweeney, RB Lewis, DA Beaton, ... Applied Physics Letters 100 (5), 2012	81	2012
The role of auger recombination in InAs 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure IP Marko, AD Andreev, AR Adams, R Krebs, JP Reithmaier, A Forchel IEEE Journal of selected topics in quantum electronics 9 (5), 1300-1307, 2003	81	2003
Physical properties and optimization of GaBiAs/(Al) GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi IP Marko, P Ludewig, ZL Bushell, SR Jin, K Hild, Z Batool, S Reinhard, ... Journal of Physics D: Applied Physics 47 (34), 345103, 2014	78	2014
Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon L Lever, Y Hu, M Myronov, X Liu, N Owens, FY Gardes, IP Marko, ... Optics letters 36 (21), 4158-4160, 2011	73	2011
Progress toward III–V bismide alloys for near-and midinfrared laser diodes IP Marko, SJ Sweeney IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-12, 2017	69	2017
Reduced bilateral recombination by functional molecular interface engineering for efficient inverted perovskite solar cells B Li, Y Xiang, KDGI Jayawardena, D Luo, Z Wang, X Yang, JF Watts, ... Nano Energy 78, 105249, 2020	67	2020
Mid-infrared optoelectronics: materials, devices, and applications E Tournié, L Cerutti Woodhead publishing, 2019	65	2019
Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications IP Marko, Z Batool, K Hild, SR Jin, N Hossain, TJC Hosea, JP Petropoulos, ... Applied Physics Letters 101 (22), 2012	63	2012
Temperature stable mid-infrared GaInAsSb/GaSb vertical cavity surface emitting lasers (VCSELs) AB Ikyo, IP Marko, K Hild, AR Adams, S Arafin, MC Amann, SJ Sweeney Scientific Reports 6 (1), 19595, 2016	59	2016
Ge_1−xSn_x alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration TD Eales, IP Marko, S Schulz, E O’Halloran, S Ghetmiri, W Du, Y Zhou, ... Scientific reports 9 (1), 14077, 2019	58	2019
A multifaceted ferrocene interlayer for highly stable and efficient lithium doped spiro‐OMeTAD‐based perovskite solar cells T Webb, X Liu, RJE Westbrook, S Kern, MT Sajjad, S Jenatsch, ... Advanced Energy Materials 12 (26), 2200666, 2022	54	2022
Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-/spl mu/m quantum-dot lasers IP Marko, AR Adams, SJ Sweeney, DJ Mowbray, MS Skolnick, HY Liu, ... IEEE Journal of Selected Topics in Quantum Electronics 11 (5), 1041-1047, 2005	51	2005
Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers IP Marko, SR Jin, K Hild, Z Batool, ZL Bushell, P Ludewig, W Stolz, K Volz, ... Semiconductor Science and Technology 30 (9), 094008, 2015	46	2015
Temperature dependence of the gain in p-doped and intrinsic 1.3 μm InAs∕ GaAs quantum dot lasers NF Masse, SJ Sweeney, IP Marko, AR Adams, N Hatori, M Sugawara Applied physics letters 89 (19), 2006	46	2006
Suppressing interfacial recombination with a strong‐interaction surface modulator for efficient inverted perovskite solar cells B Li, J Deng, JA Smith, P Caprioglio, K Ji, D Luo, JD McGettrick, ... Advanced Energy Materials 12 (48), 2202868, 2022	43	2022
Importance of Auger recombination in InAs 1.3 µm quantum dot lasers IP Marko, AD Andreev, AR Adams, R Krebs, JP Reithmaier, A Forchel Electronics Letters 39 (1), 1, 2003	38	2003
The Importance of Recombination via Excited States in InAs/GaAs m Quantum-Dot Lasers MT Crowley, IP Marko, NF Masse, AD Andreev, S Tomic, SJ Sweeney, ... IEEE Journal of Selected Topics in Quantum Electronics 15 (3), 799-807, 2009	35	2009

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