Amritesh Rai

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Emanuel TutucProfessor, The University of Texas at AustinDirección de correo verificada de mer.utexas.edu
Anupam RoyThe University of Texas at AustinDirección de correo verificada de austin.utexas.edu
Kyounghwan KimAppleDirección de correo verificada de utexas.edu
Rik DeyAssistant Professor, Indian Institute of Technology KanpurDirección de correo verificada de iitk.ac.in
Samaresh GuchhaitHoward University, Washington, DCDirección de correo verificada de Howard.edu
Leonard F. RegisterProfessor of Electrical and Computer EngineeringDirección de correo verificada de austin.utexas.edu
Tanmoy PramanikIIT Roorkee, Intel Corporation, The University of Texas at AustinDirección de correo verificada de ece.iitr.ac.in
Sangwoo KangIntel CorporationDirección de correo verificada de intel.com
Rudresh (Rudy) GhoshUniversity of Texas at AustinDirección de correo verificada de rudyghosh.com
Sushant SondeUT Austin, CNR-IMM, IMECDirección de correo verificada de austin.utexas.edu
Kenji WatanabeNational Institute for Materials ScienceDirección de correo verificada de nims.go.jp
Deji AkinwandeThe University of Texas at Austin, IEEE, MRS, APS, AAS FellowDirección de correo verificada de ece.utexas.edu
Atresh SanneIntel, University of Texas at AustinDirección de correo verificada de utexas.edu
T.TaniguchiNational Institute for Materials ScienceDirección de correo verificada de nims.go.jp
Maruthi YogeeshDesign Engineer @ Intel, Researcher @ UCBerkeley;Dirección de correo verificada de berkeley.edu
Amithraj ValsarajCore Compact Modeling, Intel CorporationDirección de correo verificada de utexas.edu
Nanshu Lu (鲁南姝), Ph.D.Professor, the University of Texas at AustinDirección de correo verificada de utexas.edu
Galan MoodyUniversity of California Santa BarbaraDirección de correo verificada de ece.ucsb.edu
Allan H. MacDonaldUniversity of Texas Austin, Indiana University, NRC Canada, U of TorontoDirección de correo verificada de physics.utexas.edu
Jacob S EmbleyUniversity of Texas at AustinDirección de correo verificada de utexas.edu

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Amritesh Rai

Front End Process Integration Engineer @ Intel ▪️ UT Austin ▪️ Ohio State

Dirección de correo verificada de utexas.edu - Página principal

Solid State Electronics Semiconductor Memory Process Integration 2D Nanoelectronics Beyond-CMOS Devices


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Evidence for moiré excitons in van der Waals heterostructures K Tran, G Moody, F Wu, X Lu, J Choi, K Kim, A Rai, DA Sanchez, J Quan, ... Nature 567 (7746), 71-75, 2019	1356	2019
High-Mobility Holes in Dual-Gated WSe₂ Field-Effect Transistors HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ... ACS nano 9 (10), 10402-10410, 2015	325	2015
Structural and Electrical Properties of MoTe₂ and MoSe₂ Grown by Molecular Beam Epitaxy A Roy, HCP Movva, B Satpati, K Kim, R Dey, A Rai, T Pramanik, ... ACS applied materials & interfaces 8 (11), 7396-7402, 2016	247	2016
Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ... Nano letters 15 (7), 4329-4336, 2015	240	2015
Large‐Area Monolayer MoS2 for Flexible Low‐Power RF Nanoelectronics in the GHz Regime HY Chang, MN Yogeesh, R Ghosh, A Rai, A Sanne, S Yang, N Lu, ... Advanced Materials 28 (9), 1818-1823, 2016	217	2016
Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS₂ CM Corbet, C McClellan, A Rai, SS Sonde, E Tutuc, SK Banerjee Acs Nano 9 (1), 363-370, 2015	210	2015
Radio frequency transistors and circuits based on CVD MoS2 A Sanne, R Ghosh, A Rai, MN Yogeesh, SH Shin, A Sharma, K Jarvis, ... Nano letters 15 (8), 5039-5045, 2015	201	2015
Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor A Rai, H Movva, A Roy, D Taneja, S Chowdhury, S Banerjee Crystals 8 (8), 316, 2018	166	2018
Reconfigurable Complementary Monolayer MoTe₂ Field-Effect Transistors for Integrated Circuits S Larentis, B Fallahazad, HCP Movva, K Kim, A Rai, T Taniguchi, ... ACS nano 11 (5), 4832-4839, 2017	140	2017
Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si (111)-(7× 7) surface by molecular beam epitaxy A Roy, S Guchhait, S Sonde, R Dey, T Pramanik, A Rai, HCP Movva, ... Applied Physics Letters 102 (16), 2013	111	2013
Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates A Sanne, R Ghosh, A Rai, HCP Movva, A Sharma, R Rao, L Mathew, ... Applied Physics Letters 106 (6), 2015	103	2015
Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films A Roy, S Guchhait, R Dey, T Pramanik, CC Hsieh, A Rai, SK Banerjee ACS nano 9 (4), 3772-3779, 2015	98	2015
Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide A Valsaraj, J Chang, A Rai, LF Register, SK Banerjee 2D Materials 2 (4), 045009, 2015	68	2015
Stacking‐Order‐Driven Optical Properties and Carrier Dynamics in ReS₂ Y Zhou, N Maity, A Rai, R Juneja, X Meng, A Roy, Y Zhang, X Xu, JF Lin, ... Advanced Materials 32 (22), 1908311, 2020	59	2020
Activation of a nickel-based oxygen evolution reaction catalyst on a hematite photoanode via incorporation of cerium for photoelectrochemical water oxidation H Lim, JY Kim, EJ Evans, A Rai, JH Kim, BR Wygant, CB Mullins ACS applied materials & interfaces 9 (36), 30654-30661, 2017	58	2017
Visualization of Local Conductance in MoS₂/WSe₂ Heterostructure Transistors D Wu, W Li, A Rai, X Wu, HCP Movva, MN Yogeesh, Z Chu, SK Banerjee, ... Nano letters 19 (3), 1976-1981, 2019	51	2019
Carrier trapping by oxygen impurities in molybdenum diselenide K Chen, A Roy, A Rai, A Valsaraj, X Meng, F He, X Xu, LF Register, ... ACS applied materials & interfaces 10 (1), 1125-1131, 2018	47	2018
Characteristics and mechanism study of cerium oxide based random access memories CC Hsieh, A Roy, A Rai, YF Chang, SK Banerjee Applied Physics Letters 106 (17), 2015	44	2015
Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors S Kang, N Prasad, HCP Movva, A Rai, K Kim, X Mou, T Taniguchi, ... Nano Letters 16 (8), 4975-4981, 2016	43	2016
Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3 R Dey, T Pramanik, A Roy, A Rai, S Guchhait, S Sonde, HCP Movva, ... Applied Physics Letters 104 (22), 2014	43	2014

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