Stateful reconfigurable logic via a single-voltage-gated spin hall-effect driven magnetic tunnel junction in a spintronic memory H Zhang, W Kang, L Wang, KL Wang, W Zhao
IEEE Transactions on Electron Devices 64 (10), 4295-4301, 2017
92 2017 Failure analysis in magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy W Zhao, X Zhao, B Zhang, K Cao, L Wang, W Kang, Q Shi, M Wang, ...
Materials 9 (1), 41, 2016
84 2016 Field-free switching of perpendicular magnetization through voltage-gated spin-orbit torque SZ Peng, JQ Lu, WX Li, LZ Wang, H Zhang, X Li, KL Wang, WS Zhao
2019 IEEE International Electron Devices Meeting (IEDM), 28.6. 1-28.6. 4, 2019
58 2019 Voltage-controlled magnetic tunnel junctions for processing-in-memory implementation L Wang, W Kang, F Ebrahimi, X Li, Y Huang, C Zhao, KL Wang, W Zhao
IEEE Electron Device Letters 39 (3), 440-443, 2018
41 2018 Interfacial perpendicular magnetic anisotropy in sub-20 nm tunnel junctions for large-capacity spin-transfer torque magnetic random-access memory S Peng, W Kang, M Wang, K Cao, X Zhao, L Wang, Y Zhang, Y Zhang, ...
IEEE Magnetics Letters 8, 1-5, 2017
39 2017 Recent progresses in spin transfer torque-based magnetoresistive random access memory (STT-MRAM) L Wang, Y Zhang, Z Wang, W Zhao, S Peng, L Chang
SCIENTIA SINICA Physica, Mechanica & Astronomica 46 (10), 107306, 2016
20 2016 Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale Y Zhang, Z Zhang, L Wang, J Nan, Z Zheng, X Li, K Wong, Y Wang, ...
Applied Physics Letters 111 (5), 2017
19 2017 1700 V High-performance GaN HEMTs on 6-inch Sapphire with 1.5 μm Thin Buffer X Li, J Wang, J Zhang, Z Han, S You, L Chen, L Wang, Z Li, W Yang, ...
IEEE Electron Device Letters, 2023
17 2023 Low-temperature performance of nanoscale perpendicular magnetic tunnel junctions with double MgO-interface free layer K Cao, H Li, W Cai, J Wei, L Wang, Y Hu, Q Jiang, H Cui, C Zhao, W Zhao
IEEE Transactions on Magnetics 55 (3), 1-4, 2018
17 2018 Thermal spin torques in magnetic insulators H Yu, SD Brechet, P Che, FA Vetro, M Collet, S Tu, YG Zhang, Y Zhang, ...
Physical Review B 95 (10), 104432, 2017
17 2017 Enhancement of perpendicular magnetic anisotropy through Fe insertion at the CoFe/W interface S Peng, L Wang, X Li, Z Wang, J Zhou, J Qiao, R Chen, Y Zhang, ...
IEEE Transactions on Magnetics 54 (11), 1-5, 2018
11 2018 Tuning the pinning direction of giant magnetoresistive sensor by post annealing process Z Cao, Y Wei, W Chen, S Yan, L Lin, Z Li, L Wang, H Yang, Q Leng, ...
Science China Information Sciences 64, 1-7, 2021
10 2021 Large spin Hall effect of perpendicularly magnetized β-W/CoFeB/MgO layers with high thermal stability L Wang, K Shi, S Peng, K Cao, H Yang, J Gao, W Zhao, C Zhao
Japanese Journal of Applied Physics 58 (5), 050903, 2019
8 2019 Interface control of domain wall depinning field Y Huang, X Li, L Wang, G Yu, KL Wang, W Zhao
AIP Advances 8 (5), 2018
8 2018 Novel magnetic tunneling junction memory cell with negative capacitance-amplified voltage-controlled magnetic anisotropy effect L Zeng, T Gao, D Zhang, S Peng, L Wang, F Gong, X Qin, M Long, ...
IEEE Transactions on Electron Devices 64 (12), 4919-4927, 2017
8 2017 p-GaN Gate HEMTs on 6-inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics Z Han, X Li, J Ji, L Chen, L Wang, Z Cheng, W Yang, S You, Z Li, Y Hao, ...
IEEE Electron Device Letters, 2024
7 2024 Demonstration of X Li, J Zhang, J Ji, Z Cheng, J Wang, L Chen, L Wang, S You, L Zhai, Q Li, ...
IEEE Transactions on Electron Devices, 2024
6 2024 Field-free switching of perpendicular magnetic tunnel junction via voltage-gated spin hall effect for low-power spintronic memory S Peng, X Li, W Kang, H Zhang, L Wang, Z Wang, Z Wang, Y Zhang, ...
arXiv preprint arXiv:1804.11025, 2018
3 2018 STT-MRAM 存储器的研究进展 赵巍胜， 王昭昊， 彭守仲， 王乐知， 常亮， 张有光
中国科学: 物理学, 力学, 天文学 46 (10), 63-83, 2016
2 2016 High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at high temperatures KLW LeZhi Wang, Xiang Li, Taisuke Sasaki, Kin Wong, GuoQiang Yu, ShouZhong ...
277512 (2020) 63 (5), 54, 2020
2020 