| Nanoelectronics and Information Technology R Waser WILEY-VCH, 2012 | 1465* | 2012 |
| Tunable transport gap in phosphorene S Das, W Zhang, M Demarteau, A Hoffmann, M Dubey, A Roelofs Nano letters 14 (10), 5733-5739, 2014 | 816 | 2014 |
| All two-dimensional, flexible, transparent, and thinnest thin film transistor S Das, R Gulotty, AV Sumant, A Roelofs Nano letters 14 (5), 2861-2866, 2014 | 469 | 2014 |
| Ambipolar phosphorene field effect transistor S Das, M Demarteau, A Roelofs ACS nano 8 (11), 11730-11738, 2014 | 462 | 2014 |
| Differentiating 180 and 90 switching of ferroelectric domains with three-dimensional piezoresponse force microscopy A Roelofs, U Böttger, R Waser, F Schlaphof, S Trogisch, LM Eng Applied Physics Letters 77 (21), 3444-3446, 2000 | 231 | 2000 |
| Piezoresponse force microscopy of lead titanate nanograins possibly reaching the limit of ferroelectricity A Roelofs, T Schneller, K Szot, R Waser Applied Physics Letters 81 (27), 5231-5233, 2002 | 215 | 2002 |
| Imaging three-dimensional polarization in epitaxial polydomain ferroelectric thin films CS Ganpule, V Nagarajan, BK Hill, AL Roytburd, ED Williams, R Ramesh, ... Journal of applied physics 91 (3), 1477-1481, 2002 | 192 | 2002 |
| Review of ferroelectric domain imaging by piezoresponse force microscopy AL Kholkin, SV Kalinin, A Roelofs, A Gruverman Scanning Probe Microscopy: Electrical and Electromechanical Phenomena at the …, 2007 | 186 | 2007 |
| Nanosize ferroelectric oxides–tracking down the superparaelectric limit A Rüdiger, T Schneller, A Roelofs, S Tiedke, T Schmitz, R Waser Applied Physics A 80, 1247-1255, 2005 | 161 | 2005 |
| Non-volatile resistive sense memory with praseodymium calcium manganese oxide A Roelofs, M Siegert, V Vaithyanathan, W Tian, Y Ahn, M Balakrishnan, ... US Patent 8,227,783, 2012 | 127 | 2012 |
| Depolarizing-field-mediated 180 switching in ferroelectric thin films with 90 domains A Roelofs, NA Pertsev, R Waser, F Schlaphof, LM Eng, C Ganpule, ... Applied physics letters 80 (8), 1424-1426, 2002 | 126 | 2002 |
| Nb-doped single crystalline MoS2 field effect transistor S Das, M Demarteau, A Roelofs Applied Physics Letters 106 (17), 2015 | 116 | 2015 |
| High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors S Das, M Dubey, A Roelofs Applied Physics Letters 105 (8), 2014 | 115 | 2014 |
| Pushing towards the digital storage limit R Waser, A Rüdiger Nature materials 3 (2), 81-82, 2004 | 106 | 2004 |
| Towards the limit of ferroelectric nanosized grains A Roelofs, T Schneller, K Szot, R Waser Nanotechnology 14 (2), 250, 2003 | 105 | 2003 |
| Direct hysteresis measurements of single nanosized ferroelectric capacitors contacted with an atomic force microscope S Tiedke, T Schmitz, K Prume, A Roelofs, T Schneller, U Kall, R Waser, ... Applied Physics Letters 79 (22), 3678-3680, 2001 | 103 | 2001 |
| Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb (Zr0. 52, Ti0. 48) O3 thin films MD Nguyen, M Dekkers, E Houwman, R Steenwelle, X Wan, A Roelofs, ... Applied Physics Letters 99 (25), 2011 | 91 | 2011 |
| Critical thickness for extrinsic contributions to the dielectric and piezoelectric response in lead zirconate titanate ultrathin films Y Bastani, T Schmitz-Kempen, A Roelofs, N Bassiri-Gharb Journal of Applied Physics 109 (1), 2011 | 79 | 2011 |
| Couplings of polarization with interfacial deep trap and Schottky interface controlled ferroelectric memristive switching A Chen, W Zhang, LR Dedon, D Chen, F Khatkhatay, ... Advanced Functional Materials 30 (43), 2000664, 2020 | 76 | 2020 |
| Ferroelectric probe storage apparatus MI Lutwyche, EC Johns, MG Forrester, MD Bedillion, AK Roelofs, ... US Patent 7,447,140, 2008 | 70 | 2008 |
Saptarshi DasAckley Professor of Engineering, Pennsylvania State UniversityDirección de correo verificada de psu.edu