| Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer T Lu, S Li, C Liu, K Zhang, Y Xu, J Tong, L Wu, H Wang, X Yang, Y Yin, ... Applied Physics Letters 100 (14), 2012 | 91 | 2012 |
| High-quality AlN film grown on sputtered AlN/sapphire via growth-mode modification C He, W Zhao, H Wu, S Zhang, K Zhang, L He, N Liu, Z Chen, B Shen Crystal Growth & Design 18 (11), 6816-6823, 2018 | 57 | 2018 |
| The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer TP Lu, ST Li, K Zhang, C Liu, GW Xiao, YG Zhou, SW Zheng, YA Yin, ... Chinese Physics B 20 (9), 098503, 2011 | 51 | 2011 |
| Epitaxial lift-off of flexible GaN-based HEMT arrays with performances optimization by the piezotronic effect X Chen, J Dong, C He, L He, Z Chen, S Li, K Zhang, X Wang, ZL Wang Nano-Micro Letters 13, 1-13, 2021 | 47 | 2021 |
| High-quality GaN epilayers achieved by facet-controlled epitaxial lateral overgrowth on sputtered AlN/PSS templates C He, W Zhao, K Zhang, L He, H Wu, N Liu, S Zhang, X Liu, Z Chen ACS applied materials & interfaces 9 (49), 43386-43392, 2017 | 39 | 2017 |
| Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers LJ Wu, ST Li, C Liu, HL Wang, TP Lu, K Zhang, GW Xiao, YG Zhou, ... Chinese Physics B 21 (6), 068506, 2012 | 36 | 2012 |
| Performance enhancement of AlGaN-based 365 nm ultraviolet light-emitting diodes with a band-engineering last quantum barrier L He, W Zhao, K Zhang, C He, H Wu, N Liu, W Song, Z Chen, S Li Optics Letters 43 (3), 515-518, 2018 | 35 | 2018 |
| Optimization of all figure-of-merits in well-aligned GaN microwire array based Schottky UV photodetectors by Si doping H Wang, X Wang, X Luo, W Song, J Guo, Y Sun, B Zhang, L Wang, ... Acs Photonics 6 (8), 1972-1980, 2019 | 33 | 2019 |
| Blue InGaN light-emitting diodes with dip-shaped quantum wells TP Lu, ST Li, K Zhang, C Liu, GW Xiao, YG Zhou, SW Zheng, YA Yin, ... Chinese Physics B 20 (10), 108504, 2011 | 32 | 2011 |
| Recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate H Wu, K Zhang, C He, L He, Q Wang, W Zhao, Z Chen Crystals 12 (1), 38, 2021 | 30 | 2021 |
| The piezotronic effect in InGaN/GaN quantum-well based microwire for ultrasensitive strain sensor L Chen, K Zhang, J Dong, B Wang, L He, Q Wang, M He, X Wang Nano Energy 72, 104660, 2020 | 30 | 2020 |
| Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a AlxGa1-xN carrier reservoir layer L He, W Zhao, K Zhang, C He, H Wu, X Liu, X Luo, S Li, Z Chen Applied Physics Express 12 (6), 062013, 2019 | 24 | 2019 |
| Efficient carrier transport for 368 nm ultraviolet LEDs with a p-AlInGaN/AlGaN short-period superlattice electron blocking layer L He, K Zhang, H Wu, C He, W Zhao, Q Wang, S Li, Z Chen Journal of Materials Chemistry C 9 (25), 7893-7899, 2021 | 23 | 2021 |
| High quality N-polar GaN films grown with varied V/III ratios by metal–organic vapor phase epitaxy C Li, K Zhang, Q Zeng, X Yin, X Ge, J Wang, Q Wang, C He, W Zhao, ... RSC advances 10 (70), 43187-43192, 2020 | 22 | 2020 |
| Optimized performances in InGaN/GaN quantum-well membrane based vertical optoelectronics by the Piezo-phototronic effect Y Lin, X Chen, J Dong, C He, W Zhao, Z Chen, K Zhang, X Wang Nano Energy 89, 106454, 2021 | 18 | 2021 |
| Centimeter-long III-Nitride nanowires and continuous-wave pumped lasing enabled by graphically epitaxial lift-off J Dong, B Wang, X Zou, W Zhao, C He, L He, Q Wang, Z Chen, S Li, ... Nano Energy 78, 105404, 2020 | 18 | 2020 |
| Point-defect distribution and transformation near the surfaces of AlGaN films grown by MOCVD N Liu, Q Wang, B Li, J Wang, K Zhang, C He, L Wang, L Song, X Cao, ... The Journal of Physical Chemistry C 123 (14), 8865-8870, 2019 | 18 | 2019 |
| Epitaxtial lift-off for freestanding InGaN/GaN membranes and vertical blue light-emitting-diodes J Jiang, J Dong, B Wang, C He, W Zhao, Z Chen, K Zhang, X Wang Journal of Materials Chemistry C 8 (24), 8284-8289, 2020 | 16 | 2020 |
| Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes T Lu, S Li, K Zhang, C Liu, Y Yin, L Wu, H Wang, X Yang, G Xiao, Y Zhou Optics express 19 (19), 18319-18323, 2011 | 15 | 2011 |
| Low-defect-density aluminum nitride (AlN) thin films realized by zigzag macrostep-induced dislocation redirection C He, H Wu, C Jia, K Zhang, L He, Q Wang, J Li, N Liu, S Zhang, W Zhao, ... Crystal Growth & Design 21 (6), 3394-3400, 2021 | 14 | 2021 |
Chenguang He (何晨光)Guangdong Institute of Semiconductor Industrial Technology (Engineer); Peking University (Ph. D)Dirección de correo verificada de pku.edu.cn