| High-endurance ferroelectric (La, Y) and (La, Gd) Co-doped hafnium zirconate grown by atomic layer deposition MI Popovici, AM Walke, J Bizindavyi, J Meersschaut, K Banerjee, ... ACS Applied Electronic Materials 4 (4), 1823-1831, 2022 | 37 | 2022 |
| Band-tails tunneling resolving the theory-experiment discrepancy in Esaki diodes J Bizindavyi, AS Verhulst, Q Smets, D Verreck, B Sorée, G Groeseneken IEEE Journal of the Electron Devices Society 6, 633-641, 2018 | 27 | 2018 |
| Capacitive memory window with non-destructive read in ferroelectric capacitors S Mukherjee, J Bizindavyi, S Clima, MI Popovici, X Piao, K Katcko, ... IEEE Electron Device Letters 44 (7), 1092-1095, 2023 | 23 | 2023 |
| High performance La-doped HZO based ferroelectric capacitors by interfacial engineering MI Popovici, J Bizindavyi, P Favia, S Clima, MNK Alam, ... 2022 International Electron Devices Meeting (IEDM), 6.4. 1-6.4. 4, 2022 | 23 | 2022 |
| Strain and ferroelectricity in wurtzite ScxAl1− xN materials S Clima, C Pashartis, J Bizindavyi, SRC McMitchell, M Houssa, ... Applied Physics Letters 119 (17), 2021 | 23 | 2021 |
| Pulse-based capacitive memory window with high non-destructive read endurance in fully BEOL compatible ferroelectric capacitors S Mukherjee, J Bizindavyi, YC Luo, S Clima, J Read, MI Popovici, Y Xiang, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 13 | 2023 |
| Large variation in temperature dependence of band-to-band tunneling current in tunnel devices J Bizindavyi, AS Verhulst, D Verreck, B Soree, G Groeseneken IEEE Electron Device Letters 40 (11), 1864-1867, 2019 | 11 | 2019 |
| Analysis of wake-up reversal behavior induced by imprint in La: HZO MFM capacitors S Lee, N Ronchi, J Bizindavyi, MI Popovici, K Banerjee, A Walke, ... IEEE Transactions on Electron Devices 70 (5), 2568-2574, 2023 | 10 | 2023 |
| Signature of ballistic band-tail tunneling current in tunnel FET J Bizindavyi, AS Verhulst, B Sorée, G Groeseneken IEEE Transactions on Electron Devices 67 (8), 3486-3491, 2020 | 10 | 2020 |
| La Doped HZO based 3D-Trench Metal-Ferroelectric-Metal Capacitors with High Endurance (>1012) for FeRAM Applications AM Walke, MI Popovici, SH Sharifi, EC Demir, H Puliyalil, J Bizindavyi, ... IEEE Electron Device Letters, 2024 | 9 | 2024 |
| Multi-domain phase-field modeling of polycrystalline hafnia-based (anti-) ferroelectrics capable of representing defects, wake-up and fatigue SC Chang, K Chae, MI Popovici, CC Lin, S Siddiqui, IC Tung, J Bizindavyi, ... 2022 International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2022 | 4 | 2022 |
| Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation J Bizindavyi, AS Verhulst, B Sorée, WG Vandenberghe Communications Physics 4 (1), 86, 2021 | 4 | 2021 |
| Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs J Bizindavyi, AS Verhulst, B Sorée, G Groeseneken 2018 76th Device Research Conference (DRC), 1-2, 2018 | 2 | 2018 |
| Inherent transmission probability limit between valence-band and conduction-band states and calibration of tunnel-FET parasitics AS Verhulst, D Verreck, WG Vandenberghe, Q Smets, M Mohammed, ... 2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep …, 2017 | 2 | 2017 |
| Ferroelectric Device MI Popovici, J Van Houdt, AM Walke, GS Kar, J Bizindavyi US Patent App. 18/065,335, 2023 | 1 | 2023 |
| Strain and ferroelectricity in wurtzite Sc S Clima, C Pashartis, J Bizindavyi | 1 | 2021 |
| Experimental calibration of the temperature dependence of the heterojunction bandgap in III-V tunneling devices J Bizindavyi, AS Verhulst, Q Smets, B Sorée, G Groeseneken 2019 Device Research Conference (DRC), 253-254, 2019 | 1 | 2019 |
| Calibration of the high-doping induced ballistic band-tails tunneling current with In0.53Ga0.47As Esaki diodes J Bizindavyi, AS Verhulst, Q Smets, D Verreck, N Collaert, A Mocuta, ... 2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep …, 2017 | 1 | 2017 |
| Enhanced Capacitive Memory Window by Improving Remnant Polarization in Ferroelectric Capacitors for Non-destructive Read S Mukherjee, J Bizindavyi, MI Popovici, S Clima, Y Xiang, G De, ... IEEE Electron Device Letters, 2025 | | 2025 |
| Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility DS Kwon, J Bizindavyi, G De, A Belmonte, A Delabie, L Nyns, GS Kar, ... ACS Applied Materials & Interfaces 16 (31), 41704-41715, 2024 | | 2024 |