| Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient Z Zheng, Y Zhang, V Lopez-Dominguez, L Sánchez-Tejerina, J Shi, ... Nature communications 12 (1), 4555, 2021 | 171 | 2021 |
| Ferrimagnets for spintronic devices: From materials to applications Y Zhang, X Feng, Z Zheng, Z Zhang, K Lin, X Sun, G Wang, J Wang, J Wei, ... Applied Physics Reviews 10 (1), 2023 | 67 | 2023 |
| Time-domain computing in memory using spintronics for energy-efficient convolutional neural network Y Zhang, J Wang, C Lian, Y Bai, G Wang, Z Zhang, Z Zheng, L Chen, ... IEEE Transactions on Circuits and Systems I: Regular Papers 68 (3), 1193-1205, 2021 | 62 | 2021 |
| A self-matching complementary-reference sensing scheme for high-speed and reliable toggle spin torque MRAM J Wang, C Lian, Y Bai, G Wang, Z Zhang, Z Zheng, L Chen, K Lin, ... IEEE Transactions on Circuits and Systems I: Regular Papers 67 (12), 4247-4258, 2020 | 36 | 2020 |
| Perpendicular magnetization switching by large spin–orbit torques from sputtered Bi2Te3 Z Zheng, Y Zhang, D Zhu, K Zhang, X Feng, Y He, L Chen, Z Zhang, D Liu, ... Chinese Physics B 29 (7), 078505, 2020 | 30 | 2020 |
| Rectified tunnel magnetoresistance device with high on/off ratio for in-memory computing K Zhang, K Cao, Y Zhang, Z Huang, W Cai, J Wang, J Nan, G Wang, ... IEEE Electron Device Letters 41 (6), 928-931, 2020 | 28 | 2020 |
| Efficient and controllable magnetization switching induced by intermixing-enhanced bulk spin–orbit torque in ferromagnetic multilayers K Zhang, L Chen, Y Zhang, B Hong, Y He, K Lin, Z Zhang, Z Zheng, ... Applied Physics Reviews 9 (1), 2022 | 26 | 2022 |
| High on/off ratio spintronic multi‐level memory unit for deep neural network K Zhang, X Jia, K Cao, J Wang, Y Zhang, K Lin, L Chen, X Feng, Z Zheng, ... Advanced Science 9 (13), 2103357, 2022 | 16 | 2022 |
| 3D ferrimagnetic device for multi-bit storage and efficient in-memory computing Z Zhang, Z Zheng, Y Zhang, J Sun, K Lin, K Zhang, X Feng, L Chen, ... IEEE Electron Device Letters 42 (2), 152-155, 2020 | 14 | 2020 |
| Anomalous Thermal-Assisted Spin–Orbit Torque-Induced Magnetization Switching for Energy-Efficient Logic-in-Memory Z Zheng, Z Zhang, X Feng, K Zhang, Y Zhang, Y He, L Chen, K Lin, ... ACS nano 16 (5), 8264-8272, 2022 | 10 | 2022 |
| Engineering Symmetry Breaking Enables Efficient Bulk Spin‐Orbit Torque‐Driven Perpendicular Magnetization Switching L Chen, K Zhang, B Li, B Hong, W Huang, Y He, X Feng, Z Zhang, K Lin, ... Advanced Functional Materials 34 (2), 2308823, 2024 | 5 | 2024 |