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Giyoung Yang
Giyoung Yang
Otros nombresGi-young Yang, Giyong Yang
Dirección de correo verificada de intel.com - Página principal
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A 14 nm FinFET 128 Mb SRAM With V Enhancement Techniques for Low-Power Applications
T Song, W Rim, J Jung, G Yang, J Park, S Park, Y Kim, KH Baek, S Baek, ...
IEEE Journal of Solid-State Circuits 50 (1), 158-169, 2014
1922014
A 10 nm FinFET 128 Mb SRAM with assist adjustment system for power, performance, and area optimization
T Song, W Rim, S Park, Y Kim, G Yang, H Kim, S Baek, J Jung, B Kwon, ...
IEEE Journal of Solid-State Circuits 52 (1), 240-249, 2016
1222016
Methods of generating integrated circuit layout using standard cell library
S Baek, JW Seo, G Yang, LEE Dal-Hee, S Cho
US Patent 9,460,259, 2016
342016
Semiconductor device including a gate electrode and a conductive structure
JH Do, S Lee, J Jung, J Lim, G Yang, B Sanghoon, T Song
US Patent 10,541,243, 2020
282020
12.2 A 7nm FinFET SRAM macro using EUV lithography for peripheral repair analysis
T Song, H Kim, W Rim, Y Kim, S Park, C Park, M Hong, G Yang, J Do, ...
2017 IEEE International Solid-State Circuits Conference (ISSCC), 208-209, 2017
182017
System-on-chip devices and methods of designing a layout therefor
B Sanghoon, JH Do, T Song, G Yang, S Lee, J Lim
US Patent 9,646,960, 2017
172017
Semiconductor device and method for manufacturing the same
JH Park, T Song, B Sanghoon, J Kim, G Yang, WON Hyosig
US Patent 9,536,946, 2017
142017
Design and algorithm for clock gating and flip-flop co-optimization
G Yang, T Kim
2018 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 1-6, 2018
112018
Methods of designing a layout of a semiconductor device including field effect transistor and methods of manufacturing a semicondutor device using the same
T Song, B Sanghoon, S Cho, JH Do, G Yang, J Lim
US Patent 9,928,333, 2018
112018
Method and system for designing semiconductor device
S Baek, TJ Song, G Yang, DO Jeong-Ho
US Patent 9,842,182, 2017
72017
Layout design system, semiconductor device fabricated by using the system and method for fabricating the semiconductor device
KH Baek, JH Noh, TJ Song, G Yang, OH Sang-Kyu
US Patent 9,576,953, 2017
72017
3nm Gate-All-Around (GAA) Design-Technology Co-Optimization (DTCO) for succeeding PPA by Technology
T Song, H Jung, G Yang, H Tang, H Kim, D Seo, H Kim, W Rim, S Baek, ...
2022 IEEE Custom Integrated Circuits Conference (CICC), 1-7, 2022
62022
Integrated circuit including standard cell
I Kim, H Kim, TJ Song, JH Jung, G Yang, J Lim
US Patent 10,354,947, 2019
62019
Standard Cell Design Optimization with Advanced MOL Technology in 3nm GAA Process
G Yang, H Jung, J Lim, J Seo, I Kim, J Yu, H You, J Kong, G Kim, M Jeong, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
32022
Semiconductor memory devices including a discharge circuit
TJ Song, GH Kim, JH Park, GY Yang, JH Jung
US Patent 9,087,566, 2015
32015
Integrated circuit including integrated standard cell structure
HG You, IG Kim, GY Yang, JS Yu, JY Lim, HC Jung
US Patent 11,244,961, 2022
22022
Methods of designing a layout of a semiconductor device including field effect transistor and methods of manufacturing a semiconductor device using the same
T Song, B Sanghoon, S Cho, JH Do, G Yang, J Lim
US Patent 10,037,401, 2018
22018
Semiconductor device and method of manufacturing the same
G Yang, I Kim
US Patent 11,741,285, 2023
12023
Adder cell and integrated circuit including the same
SEO Jaewoo, M Jeong, Y Kim, G Yang, E Jun, C Kim, M Bae
US Patent App. 17/563,836, 2022
12022
Integrated circuit including standard cell
I Kim, H Kim, TJ Song, JH Jung, G Yang, J Lim
US Patent 10,672,702, 2020
12020
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