| High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography L Zhang, F Xu, J Wang, C He, W Guo, M Wang, B Sheng, L Lu, Z Qin, ... Scientific reports 6 (1), 35934, 2016 | 145 | 2016 |
| High‐output‐power ultraviolet light source from quasi‐2D GaN quantum structure X Rong, X Wang, SV Ivanov, X Jiang, G Chen, P Wang, W Wang, C He, ... Advanced Materials 28 (36), 7978-7983, 2016 | 85 | 2016 |
| Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition J Cheng, X Yang, L Sang, L Guo, J Zhang, J Wang, C He, L Zhang, ... Scientific reports 6 (1), 23020, 2016 | 82 | 2016 |
| AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency P Dong, J Yan, Y Zhang, J Wang, J Zeng, C Geng, P Cong, L Sun, T Wei, ... Journal of crystal growth 395, 9-13, 2014 | 82 | 2014 |
| High-quality AlN film grown on sputtered AlN/sapphire via growth-mode modification C He, W Zhao, H Wu, S Zhang, K Zhang, L He, N Liu, Z Chen, B Shen Crystal Growth & Design 18 (11), 6816−6823, 2018 | 57 | 2018 |
| Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low-and high-temperature alternation technique X Zhang, FJ Xu, JM Wang, CG He, LS Zhang, J Huang, JP Cheng, ZX Qin, ... CrystEngComm 17 (39), 7496-7499, 2015 | 56 | 2015 |
| High performance acoustic wave nitrogen dioxide sensor with ultraviolet activated 3D porous architecture of Ag-decorated reduced graphene oxide and polypyrrole aerogel S Xiong, J Zhou, J Wu, H Li, W Zhao, C He, Y Liu, Y Chen, Y Fu, H Duan ACS Applied Materials & Interfaces 13 (35), 42094-42103, 2021 | 55 | 2021 |
| High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition J Wang, F Xu, C He, L Zhang, L Lu, X Wang, Z Qin, B Shen Scientific reports 7 (1), 42747, 2017 | 54 | 2017 |
| Epitaxial lift-off of flexible GaN-based HEMT arrays with performances optimization by the piezotronic effect X Chen, J Dong, C He, L He, Z Chen, S Li, K Zhang, X Wang, ZL Wang Nano-Micro Letters 13, 1-13, 2021 | 47 | 2021 |
| Generation of Rashba spin–orbit coupling in CdSe nanowire by ionic liquid gate S Zhang, N Tang, W Jin, J Duan, X He, X Rong, C He, L Zhang, X Qin, ... Nano letters 15 (2), 1152-1157, 2015 | 40 | 2015 |
| High-quality GaN epilayers achieved by facet-controlled epitaxial lateral overgrowth on sputtered AlN/PSS templates C He, W Zhao, K Zhang, L He, H Wu, N Liu, S Zhang, X Liu, Z Chen ACS applied materials & interfaces 9 (49), 43386-43392, 2017 | 39 | 2017 |
| Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system C He, Z Qin, F Xu, L Zhang, J Wang, M Hou, S Zhang, X Wang, W Ge, ... Scientific Reports 6 (1), 25124, 2016 | 37 | 2016 |
| Performance enhancement of AlGaN-based 365 nm ultraviolet light-emitting diodes with a band-engineering last quantum barrier L He, W Zhao, K Zhang, C He, H Wu, N Liu, W Song, Z Chen, S Li Optics Letters 43 (3), 515-518, 2018 | 35 | 2018 |
| Recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate H Wu, K Zhang, C He, L He, Q Wang, W Zhao, Z Chen Crystals 12 (1), 38, 2021 | 30 | 2021 |
| Optical investigation of strong exciton localization in high Al composition AlxGa1-xN alloys S Fan, Z Qin, C He, M Hou, X Wang, B Shen, W Li, W Wang, D Mao, P Jin, ... Optics Express 21 (21), 24497-24503, 2013 | 26 | 2013 |
| Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a AlxGa1-xN carrier reservoir layer L He, W Zhao, K Zhang, C He, H Wu, X Liu, X Luo, S Li, Z Chen Applied Physics Express 12 (6), 062013, 2019 | 24 | 2019 |
| Enhancement of optical polarization degree of AlGaN quantum wells by using staggered structure W Wang, H Lu, L Fu, C He, M Wang, N Tang, F Xu, T Yu, W Ge, B Shen Optics express 24 (16), 18176-18183, 2016 | 24 | 2016 |
| Efficient carrier transport for 368 nm ultraviolet LEDs with a p-AlInGaN/AlGaN short-period superlattice electron blocking layer L He, K Zhang, H Wu, C He, W Zhao, Q Wang, S Li, Z Chen Journal of Materials Chemistry C 9 (25), 7893-7899, 2021 | 23 | 2021 |
| High quality N-polar GaN films grown with varied V/III ratios by metal–organic vapor phase epitaxy C Li, K Zhang, Q Zeng, X Yin, X Ge, J Wang, Q Wang, C He, W Zhao, ... RSC advances 10 (70), 43187-43192, 2020 | 22 | 2020 |
| Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers C He, Z Qin, F Xu, M Hou, S Zhang, L Zhang, X Wang, W Ge, B Shen Scientific Reports 5 (1), 13046, 2015 | 21 | 2015 |
Shan Zhang (张姗)Guangzhou University (Lecturer); Peking University (Ph. D.)Dirección de correo verificada de gzhu.edu.cn
