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Wen Wan (万闻)
Wen Wan (万闻)
Shanghai University (CN), DIPC(Spain), Xiamen University(CN).
Dirección de correo verificada de stu.xmu.edu.cn
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Citado por
Citado por
Año
Absence of Ferromagnetism in VSe2 Caused by Its Charge Density Wave Phase
AO Fumega, M Gobbi, P Dreher, W Wan, C González-Orellana, ...
The Journal of Physical Chemistry C 123 (45), 27802-27810, 2019
1292019
Proximity Effects on the Charge Density Wave Order and Superconductivity in Single-Layer NbSe2
P Dreher, W Wan, A Chikina, M Bianchi, H Guo, R Harsh, S Mañas-Valero, ...
ACS nano 15 (12), 19430-19438, 2021
572021
A homogeneous p–n junction diode by selective doping of few layer MoSe 2 using ultraviolet ozone for high-performance photovoltaic devices
X Zheng, Y Wei, J Liu, S Wang, J Shi, H Yang, G Peng, C Deng, W Luo, ...
Nanoscale 11 (28), 13469-13476, 2019
482019
Interlayer coupling of a direct van der Waals epitaxial MoS 2/graphene heterostructure
W Wan, X Li, X Li, B Xu, L Zhan, Z Zhao, P Zhang, SQ Wu, Z Zhu, ...
RSC advances 6 (1), 323-330, 2016
472016
Observation of Superconducting Collective Modes from Competing Pairing Instabilities in Single‐Layer NbSe2
W Wan, P Dreher, D Muñoz‐Segovia, R Harsh, H Guo, ...
Advanced Materials 34 (41), 2206078, 2022
342022
Incorporating isolated molybdenum (Mo) atoms into bilayer epitaxial graphene on 4H-SiC (0001)
W Wan, H Li, H Huang, SL Wong, L Lv, Y Gao, ATS Wee
ACS nano 8 (1), 970-976, 2014
262014
MoS2 materials synthesized on SiO2/Si substrates via MBE
L Zhan, W Wan, Z Zhu, TM Shih, W Cai
Journal of Physics: Conference Series 864 (1), 012037, 2017
252017
Tailoring Superconductivity in Large-Area Single-Layer NbSe2 via Self-Assembled Molecular Adlayers
F Calavalle, P Dreher, AP Surdendran, W Wan, M Timpel, R Verucchi, ...
Nano letters 21 (1), 136-143, 2020
232020
Temperature‐Related Morphological Evolution of MoS2 Domains on Graphene and Electron Transfer within Heterostructures
W Wan, L Zhan, B Xu, F Zhao, Z Zhu, Y Zhou, Z Yang, T Shih, W Cai
Small 13 (15), 1603549, 2017
232017
Magnetic correlations in single-layer NbSe2
S Divilov, W Wan, P Dreher, E Bölen, D Sánchez-Portal, MM Ugeda, ...
Journal of Physics: Condensed Matter 33 (29), 295804, 2021
222021
Evidence for ground state coherence in a two-dimensional Kondo lattice
W Wan, R Harsh, A Meninno, P Dreher, S Sajan, H Guo, I Errea, ...
Nature communications 14 (1), 7005, 2023
192023
Nontrivial Doping Evolution of Electronic Properties in Ising‐Superconducting Alloys
W Wan, D Wickramaratne, P Dreher, R Harsh, II Mazin, MM Ugeda
Advanced Materials 34 (26), 2200492, 2022
152022
Syntheses and bandgap alterations of MoS2 induced by stresses in graphene-platinum substrates
W Wan, L Chen, L Zhan, Z Zhu, Y Zhou, T Shih, S Guo, J Kang, H Huang, ...
Carbon 131, 26-30, 2018
142018
Ni foam assisted synthesis of high quality hexagonal boron nitride with large domain size and controllable thickness
H Ying, X Li, D Li, M Huang, W Wan, Q Yao, X Chen, Z Wang, Y Wu, ...
2D Materials 5 (2), 025020, 2018
132018
Centimeter-Scale Nearly Single-Crystal Monolayer MoS2 via Self-Limiting Vapor Deposition Epitaxy
L Zhan, W Wan, Z Zhu, Y Xu, TM Shih, C Zhang, W Lin, X Li, Z Zhao, ...
The Journal of Physical Chemistry C 121 (8), 4703-4707, 2017
132017
Superconducting dome by tuning through a van Hove singularity in a two-dimensional metal
W Wan, R Harsh, P Dreher, F de Juan, MM Ugeda
npj 2D Materials and Applications 7 (1), 41, 2023
122023
An etching phenomenon exhibited by chemical vapor deposited graphene on a copper pocket
Z Zhao, X Chen, C Zhang, W Wan, Z Shan, B Tian, Q Li, H Ying, P Zhuang, ...
Carbon 106, 279-283, 2016
122016
Controlled growth of MoS2 via surface-energy alterations
W Wan, L Zhan, TM Shih, Z Zhu, J Lu, J Huang, Y Zhang, H Huang, ...
Nanotechnology 31 (3), 035601, 2019
72019
Critical annealing temperature for stacking orientation of bilayer graphene
Z Zhu, L Zhan, TM Shih, W Wan, J Lu, J Huang, S Guo, Y Zhou, W Cai
Small 14 (39), 1802498, 2018
62018
A visualization method for probing grain boundaries of single layer graphene via molecular beam epitaxy
L Zhan, W Wan, Z Zhu, Z Zhao, Z Zhang, TM Shih, W Cai
Nanotechnology 28 (30), 305601, 2017
62017
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20