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Heng Li
Heng Li
Dirección de correo verificada de g2.nctu.edu.tw
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Ultrastrong mode confinement in ZnO surface plasmon nanolasers
YH Chou, BT Chou, CK Chiang, YY Lai, CT Yang, H Li, TR Lin, CC Lin, ...
ACS nano 9 (4), 3978-3983, 2015
1172015
Flexible organometal–halide perovskite lasers for speckle reduction in imaging projection
YC Wang, H Li, YH Hong, KB Hong, FC Chen, CH Hsu, RK Lee, C Conti, ...
ACS nano 13 (5), 5421-5429, 2019
1042019
Low‐threshold bound state in the continuum lasers in hybrid lattice resonance metasurfaces
JH Yang, ZT Huang, DN Maksimov, PS Pankin, IV Timofeev, KB Hong, ...
Laser & Photonics Reviews 15 (10), 2100118, 2021
932021
Manipulation of nanoscale V-pits to optimize internal quantum efficiency of InGaN multiple quantum wells
CY Chang, H Li, YT Shih, TC Lu
Applied Physics Letters 106 (9), 2015
692015
3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits
CK Li, CK Wu, CC Hsu, LS Lu, H Li, TC Lu, YR Wu
AIP Advances 6 (5), 2016
612016
Plasmonic nanolasers enhanced by hybrid graphene–insulator–metal structures
H Li, JH Li, KB Hong, MW Yu, YC Chung, CY Hsu, JH Yang, CW Cheng, ...
Nano Letters 19 (8), 5017-5024, 2019
522019
Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme
SC Huang, H Li, ZH Zhang, H Chen, SC Wang, TC Lu
Applied Physics Letters 110 (2), 2017
392017
High output power GaN-based green resonant-cavity light-emitting diodes with trapezoidal quantum wells
H Wu, H Li, SY Kuo, BY Chen, TC Lu, H Huang
IEEE Transactions on Electron Devices 67 (9), 3650-3654, 2020
242020
Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers
SW Chen, H Li, TC Lu
AIP Advances 6 (4), 2016
242016
Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy
H Li, HY Cheng, WL Chen, YH Huang, CK Li, CY Chang, YR Wu, TC Lu, ...
Scientific reports 7 (1), 45519, 2017
232017
Current Modulation of Plasmonic Nanolasers by Breaking Reciprocity on Hybrid Graphene–Insulator–Metal Platforms
H Li, ZT Huang, KB Hong, CY Hsu, JW Chen, CW Cheng, KP Chen, ...
Advanced Science 7 (24), 2001823, 2020
202020
Design of photonic crystal surface emitting lasers with indium-tin-oxide top claddings
SC Huang, KB Hong, HL Chiu, SW Lan, TC Chang, H Li, TC Lu
Applied Physics Letters 112 (6), 2018
192018
Effects of nanoscale V-shaped pits on GaN-based light emitting diodes
SW Chen, H Li, CJ Chang, TC Lu
Materials 10 (2), 113, 2017
192017
Improved performance of near UV GaN-based light emitting diodes with asymmetric triangular multiple quantum wells
H Li, CJ Chang, SY Kuo, HC Wu, H Huang, TC Lu
IEEE Journal of Quantum Electronics 55 (1), 1-4, 2018
132018
Full-spectrum analysis of perovskite-based surface plasmon nanolasers
PJ Cheng, QY Zheng, CY Hsu, H Li, KB Hong, Y Zhu, Q Cui, C Xu, TC Lu, ...
Nanoscale Research Letters 15, 1-9, 2020
122020
Room-temperature active modulation of plasmonic nanolasers by current injection on hybrid graphene–insulator–metal platforms
H Li, ZT Huang, KB Hong, JW Chen, CW Cheng, KP Chen, TR Lin, ...
Journal of Applied Physics 129 (5), 2021
82021
Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers
SW Chen, Y Yang, WC Wen, H Li, TC Lu
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State …, 2016
52016
Effects of thickness on optical characteristics and strain distribution of thin-film GaN light-emitting diodes transferred to Si substrates
H Li, YD Shi, M Feng, Q Sun, TC Lu
Applied Physics Express 9 (4), 042101, 2016
52016
Effects of three-dimensional strain distribution on the performance of GaN-based light-emitting diodes on patterned sapphire substrates
SW Chen, H Li, CJ Chang, TC Lu
Japanese Journal of Applied Physics 58 (SC), SC1036, 2019
22019
Rapid separation of gold nanorods in multilayer aqueous systems via centrifugation
IC Yao, CW Chang, HW Ko, H Li, TC Lu, JT Chen
RSC advances 6 (93), 90786-90791, 2016
22016
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Artículos 1–20