| Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures J Ligl, S Leone, C Manz, L Kirste, P Doering, T Fuchs, M Prescher, ... Journal of Applied Physics 127 (19), 2020 | 60 | 2020 |
| Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors S Leone, R Fornari, M Bosi, V Montedoro, L Kirste, P Doering, ... Journal of Crystal Growth 534, 125511, 2020 | 50 | 2020 |
| Building blocks for GaN power integration M Basler, R Reiner, S Moench, F Benkhelifa, P Döring, P Waltereit, ... IEEE Access 9, 163122-163137, 2021 | 38 | 2021 |
| Technology of GaN-based large area CAVETs with co-integrated HEMTs P Döring, R Driad, R Reiner, P Waltereit, S Leone, M Mikulla, O Ambacher IEEE Transactions on Electron Devices 68 (11), 5547-5552, 2021 | 20 | 2021 |
| Optimization of metal‐organic chemical vapor deposition regrown n‐GaN S Leone, P Brueckner, L Kirste, P Doering, T Fuchs, S Mueller, ... physica status solidi (b) 257 (3), 1900436, 2020 | 14 | 2020 |
| Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies P Neininger, M Mikulla, P Döring, M Dammann, F Thome, S Krause, ... e-Prime-Advances in Electrical Engineering, Electronics and Energy 4, 100177, 2023 | 12 | 2023 |
| Growth and fabrication of quasivertical current aperture vertical electron transistor structures P Doering, R Driad, S Leone, S Mueller, P Waltereit, L Kirste, V Polyakov, ... physica status solidi (a) 218 (3), 2000379, 2021 | 12 | 2021 |
| Switching of GaN CAVET with quasi-monolithic integrated HEMT gate driver M Basler, P Döring, S Mönch, R Reiner, M Mikulla, R Quay IEEE Electron Device Letters, 2023 | 11 | 2023 |
| Voltage-margin limiting mechanisms of AlScN-based HEMTs P Döring, S Krause, P Waltereit, P Brückner, S Leone, I Streicher, ... Applied Physics Letters 123 (3), 2023 | 9 | 2023 |
| Deep-level characterization of GaN-on-GaN current aperture vertical electron transistors M Sinnwell, P Doering, R Driad, M Dammann, M Mikulla, R Quay 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 9 | 2021 |
| Metal organic chemical vapour deposition regrown large area GaN‐on‐GaN current aperture vertical electron transistors with high current capability P Doering, R Driad, R Reiner, P Waltereit, M Mikulla, O Ambacher Electronics Letters 57 (3), 145-147, 2021 | 8 | 2021 |
| A study on the performance of AlGaN/GaN HEMTs regrown on Mg-implanted GaN layers with low channel thickness P Döring, M Sinnwell, S Müller, H Czap, R Driad, P Brückner, K Kohler, ... IEEE Transactions on Electron Devices 70 (3), 947-952, 2023 | 7 | 2023 |
| GaN power converter and high-side IC substrate issues on Si, pn junction, or SOI S Mönch, M Basler, R Reiner, F Benkhelifa, P Döring, M Sinnwell, ... e-Prime-Advances in Electrical Engineering, Electronics and Energy 4, 100171, 2023 | 6 | 2023 |
| On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors P Döring, M Sinnwell, R Reiner, R Driad, P Waltereit, S Leone, S Müller, ... Journal of Applied Physics 131 (11), 2022 | 6 | 2022 |
| Theoretical limits of the matching bandwidth and output power of AlScN-based hemts P Döring, S Krause, C Friesicke, R Quay IEEE Transactions on Electron Devices, 2023 | 5 | 2023 |
| Au‐Free Ohmic Contacts and Their Impact on Sub‐Contact Charge Carrier Concentration in AlGaN/GaN Heterostructures V Garbe, A Schmid, S Seidel, B Abendroth, H Stöcker, P Doering, ... physica status solidi (b) 259 (2), 2100312, 2022 | 5 | 2022 |
| Experimental evaluation of the device design and process technology of the current aperture vertical electron transistor for power electronics applications PM Döring | 4 | 2021 |
| Vertical GaN Transistor with Quasi-Monolithically Integrated HEMT Gate Driver and Sense-CAVET for Current Monitoring M Basler, P Döring, S Mönch, R Reiner, R Driad, M Mikulla, R Quay 2024 IEEE Applied Power Electronics Conference and Exposition (APEC), 737-741, 2024 | 3 | 2024 |
| Towards Vertical GaN-Power ICs: Co-integration of Lateral HEMTs and Vertical Power CAVETs P Döring, M Basler, R Reiner, S Mönch, R Driad, M Dammann, M Mikulla, ... 2024 36th International Symposium on Power Semiconductor Devices and ICs …, 2024 | 1 | 2024 |
| High-power component based on iii nitride compound semiconductors, intermediate product and process for production of a high-power component P Döring, R Reiner US Patent App. 18/636,343, 2024 | | 2024 |
