1.5-kV and 2.2-m H Nie, Q Diduck, B Alvarez, AP Edwards, BM Kayes, M Zhang, G Ye, ...
IEEE Electron Device Letters 35 (9), 939-941, 2014
387 2014 Frequency performance enhancement of AlGaN/GaN HEMTs on diamond Q Diduck, J Felbinger, LF Eastman, D Francis, J Wasserbauer, F Faili, ...
Electron. Lett 45 (14), 758-759, 2009
43 2009 Nonlinear characteristics of T-branch junctions: Transition from ballistic to diffusive regime H Irie, Q Diduck, M Margala, R Sobolewski, MJ Feldman
Applied Physics Letters 93 (5), 2008
43 2008 A room temperature ballistic deflection transistor for high performance applications Q Diduck, H Irie, M Margala
International Journal of High Speed Electronics and Systems 19 (01), 23-31, 2009
34 2009 A terahertz transistor based on geometrical deflection of ballistic current Q Diduck, M Margala, MJ Feldman
2006 IEEE MTT-S International Microwave Symposium Digest, 345-347, 2006
31 2006 NAND gate design for ballistic deflection transistors D Wolpert, Q Diduck, P Ampadu
IEEE Transactions on Nanotechnology 10 (1), 150-154, 2009
27 2009 Ballistic deflection transistor and logic circuits based on same Q Diduck, M Margala
US Patent 7,576,353, 2009
27 2009 GaN-on-diamond field-effect transistors: from wafers to amplifier modules DI Babić, Q Diduck, P Yenigalla, A Schreiber, D Francis, F Faili, ...
The 33rd International Convention MIPRO, 60-66, 2010
26 2010 3,000+ Hours continuous operation of GaN-on-Diamond HEMTs at 350° c channel temperature F Ejeckam, D Babić, F Faili, D Francis, F Lowe, Q Diduck, C Khandavalli, ...
2014 Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM …, 2014
21 2014 Gallium—nitride-on-diamond wafers and devices, and methods of manufacture D Babić, F Faili, D Francis, Q Diduck, F Ejeckam
US Patent 8,674,405, 2014
18 2014 Method and system for a gallium nitride vertical transistor H Nie, AP Edwards, I Kizilyalli, DP Bour, TR Prunty, Q Diduck
US Patent 9,059,199, 2015
15 2015 Gallium-nitride-on-diamond wafers and devices, and methods of manufacture F Ejeckam, D Francis, Q Diduck, F Nasser-Faili, D Babić
US Patent 8,759,134, 2014
13 2014 Ballistic deflection transistors and the emerging nanoscale era D Wolpert, H Irie, R Sobolewski, P Ampadu, Q Diduck, M Margala
2009 IEEE International Symposium on Circuits and Systems (ISCAS), 61-64, 2009
13 2009 A fully polar transmitter for efficient software-defined radios E McCune, Q Diduck, W Godycki, R Booth, D Kirkpatrick
2017 IEEE MTT-S International Microwave Symposium (IMS), 1946-1949, 2017
12 2017 Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufacture D Francis, F Faili, K Matthews, FY Lowe, Q Diduck, S Zaytsev, F Ejeckam
US Patent 9,359,693, 2016
11 2016 Semiconductor devices with improved reliability and operating life and methods of manufactuirng the same D Francis, D Babic, F Nasser-Faili, F Ejeckham, Q Diduck, J Smart, ...
US Patent App. 14/432,721, 2015
9 2015 RF and milimeter-wave high-power semiconductor device DI Babic, QE Diduck, A Schreiber
US Patent 8,796,843, 2014
9 2014 4096-QAM Microwave Transmitter Providing Efficiency Exceeding 50% and EVM Below 1% E McCune, Q Diduck
2019 49th European Microwave Conference (EuMC), 896-899, 2019
8 2019 1000V Vertical Jfet Using Bulk GaN Q Diduck, H Nie, B Alvarez, A Edwards, D Bour, O Aktas, D Disney, ...
ECS Transactions 58 (4), 295, 2013
8 2013 Thermal electric energy converter Q Diduck
US Patent App. 10/459,715, 2004
8 2004 