Artículos con órdenes de acceso público - Huilong Zhu，朱慧珑Más información
No disponibles en ningún lugar: 32
FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2
Z Zhang, G Xu, Q Zhang, Z Hou, J Li, Z Kong, Y Zhang, J Xiang, Q Xu, ...
IEEE Electron Device Letters 40 (3), 367-370, 2019
Órdenes: Chinese Academy of Sciences, National Natural Science Foundation of China
Vertical sandwich gate-all-around field-effect transistors with self-aligned high-k metal gates and small effective-gate-length variation
X Yin, Y Zhang, H Zhu, GL Wang, JJ Li, AY Du, C Li, LH Zhao, WX Huang, ...
IEEE Electron Device Letters 41 (1), 8-11, 2019
Órdenes: Chinese Academy of Sciences
Effects of defects and thermal treatment on the properties of graphene
K Jia, Y Su, Y Chen, J Luo, J Yang, P Lv, Z Zhang, H Zhu, C Zhao, T Ye
Vacuum 116, 90-95, 2015
Órdenes: National Natural Science Foundation of China
Study of selective isotropic etching Si1−xGex in process of nanowire transistors
J Li, W Wang, Y Li, N Zhou, G Wang, Z Kong, J Fu, X Yin, C Li, X Wang, ...
Journal of Materials Science: Materials in Electronics 31, 134-143, 2020
Órdenes: National Natural Science Foundation of China
Design and simulation of steep-slope silicon cold source FETs with effective carrier distribution model
W Gan, RJ Prentki, F Liu, J Bu, K Luo, Q Zhang, H Zhu, W Wang, T Ye, ...
IEEE Transactions on Electron Devices 67 (6), 2243-2248, 2020
Órdenes: Natural Sciences and Engineering Research Council of Canada, National …
Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology
G Wang, C Qin, H Yin, J Luo, N Duan, P Yang, X Gao, T Yang, J Li, J Yan, ...
Microelectronic Engineering 163, 49-54, 2016
Órdenes: Chinese Academy of Sciences
The evolution of MoS2 properties under oxygen plasma treatment and its application in MoS2 based devices
Y Zhang, J Liu, Y Pan, K Luo, J Yu, Y Zhang, K Jia, H Yin, H Zhu, H Tian, ...
Journal of Materials Science: Materials in Electronics 30, 18185-18190, 2019
Órdenes: National Natural Science Foundation of China
First demonstration of novel vertical gate-all-around field-effect-transistors featured by self-aligned and replaced high-κ metal gates
C Li, H Zhu, Y Zhang, Q Wang, X Yin, J Li, G Wang, Z Kong, X Ai, L Xie, ...
Nano letters 21 (11), 4730-4737, 2021
Órdenes: Chinese Academy of Sciences, National Natural Science Foundation of China
Study of isotropic and Si-selective quasi atomic layer etching of Si1− xGex
X Yin, H Zhu, L Zhao, G Wang, C Li, W Huang, Y Zhang, K Jia, J Li, ...
ECS Journal of Solid State Science and Technology 9 (3), 034012, 2020
Órdenes: Chinese Academy of Sciences
Study of sigma-shaped source/drain recesses for embedded-SiGe pMOSFETs
C Qin, H Yin, G Wang, P Hong, X Ma, H Cui, Y Lu, L Meng, H Yin, ...
Microelectronic Engineering 181, 22-28, 2017
Órdenes: Chinese Academy of Sciences, National Natural Science Foundation of China
An analytical study of the effect of total ionizing dose on body current in 130-nm PDSOI I/O nMOSFETs
X Xie, H Zhu, M Zhang, X Liu, L Dai, D Bi, Z Hu, Z Zhang, S Zou
IEEE Transactions on Nuclear Science 66 (3), 625-634, 2019
Órdenes: Chinese Academy of Sciences
A three-dimensional simulation study of the novel comb-like-channel field-effect transistors for the 5-nm technology node and beyond
X Li, H Zhu, W Gan, W Huang, Z Wu
IEEE Transactions on Electron Devices 69 (9), 4786-4790, 2022
Órdenes: National Natural Science Foundation of China
Negative-capacitance characteristics in a steady-state ferroelectric capacitor made of parallel domains
Z Zhu, H Zhu, S Wang, Y Liu, X Yin, K Jia, C Zhao
IEEE Electron Device Letters 38 (8), 1176-1179, 2017
Órdenes: National Natural Science Foundation of China
Selective digital etching of silicon–germanium using nitric and hydrofluoric acids
C Li, H Zhu, Y Zhang, X Yin, K Jia, J Li, G Wang, Z Kong, A Du, T Yang, ...
ACS Applied Materials & Interfaces 12 (42), 48170-48178, 2020
Órdenes: Chinese Academy of Sciences
Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22 nm node pMOSFETs
G Wang, M Moeen, A Abedin, Y Xu, J Luo, Y Guo, C Qin, Z Tang, H Yin, ...
Solid-State Electronics 114, 43-48, 2015
Órdenes: Chinese Academy of Sciences
Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS)
G Wang, M Kolahdouz, J Luo, C Qin, S Gu, Z Kong, X Yin, W Xiong, ...
Journal of Materials Science: Materials in Electronics 31, 26-33, 2020
Órdenes: Chinese Academy of Sciences, National Natural Science Foundation of China
Physical mechanism underlying the time exponent shift in the ultra-fast NBTI of high-k/metal gated p-CMOSFETs
L ZhOU, B Tang, H Yang, H Xu, Y Li, E Simoen, H Yin, H Zhu, C Zhao, ...
2018 IEEE International Symposium on the Physical and Failure Analysis of …, 2018
Órdenes: Chinese Academy of Sciences, National Natural Science Foundation of China
A novel method for source/drain ion implantation for 20 nm FinFETs and beyond
C Qin, H Yin, G Wang, Y Zhang, J Liu, Q Zhang, H Zhu, C Zhao, ...
Journal of Materials Science: Materials in Electronics 31, 98-104, 2020
Órdenes: Chinese Academy of Sciences, National Natural Science Foundation of China
Edge-contact formed by oxygen plasma and rapid thermal annealing to improve metal-graphene contact resistance
X Yan, K Jia, Y Su, Y Ma, J Luo, H Zhu, Y Wei
ECS Journal of Solid State Science and Technology 7 (2), M11, 2018
Órdenes: Chinese Academy of Sciences, National Natural Science Foundation of China
Demonstration of germanium vertical gate-all-around field-effect transistors featured by self-aligned high-κ metal gates with record high performance
L Xie, H Zhu, Y Zhang, X Ai, J Li, G Wang, J Liu, A Du, H Yang, X Yin, ...
ACS nano 17 (22), 22259-22267, 2023
Órdenes: National Natural Science Foundation of China
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