| The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ... IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011 | 542 | 2011 |
| The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability T Grasser, H Reisinger, PJ Wagner, F Schanovsky, W Gös, B Kaczer 2010 IEEE International Reliability Physics Symposium, 16-25, 2010 | 358 | 2010 |
| Recent advances in understanding the bias temperature instability T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ... 2010 international electron devices meeting, 4.4. 1-4.4. 4, 2010 | 137 | 2010 |
| On the microscopic structure of hole traps in pMOSFETs T Grasser, W Goes, Y Wimmer, F Schanovsky, G Rzepa, M Waltl, K Rott, ... 2014 IEEE International Electron Devices Meeting, 21.1. 1-21.1. 4, 2014 | 120 | 2014 |
| NBTI in nanoscale MOSFETs—The ultimate modeling benchmark T Grasser, K Rott, H Reisinger, M Waltl, F Schanovsky, B Kaczer IEEE Transactions on Electron Devices 61 (11), 3586-3593, 2014 | 72 | 2014 |
| A Physical Model for the Hysteresis in MoS2 Transistors T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, B Stampfer, ... IEEE Journal of the Electron Devices Society 6, 972-978, 2018 | 67 | 2018 |
| Advanced characterization of oxide traps: The dynamic time-dependent defect spectroscopy T Grasser, K Rott, H Reisinger, PJ Wagner, W Gös, F Schanovsky, M Waltl, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 2D. 2.1-2D. 2.7, 2013 | 61 | 2013 |
| Multiphonon hole trapping from first principles F Schanovsky, W Gös, T Grasser Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011 | 50 | 2011 |
| Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations M Karner, O Baumgartner, Z Stanojević, F Schanovsky, G Strof, ... 2016 IEEE International Electron Devices Meeting (IEDM), 30.7. 1-30.7. 4, 2016 | 38 | 2016 |
| A multi scale modeling approach to non-radiative multi phonon transitions at oxide defects in MOS structures F Schanovsky, O Baumgartner, V Sverdlov, T Grasser Journal of Computational Electronics 11 (3), 218-224, 2012 | 29 | 2012 |
| An advanced description of oxide traps in MOS transistors and its relation to DFT F Schanovsky, W Gös, T Grasser Journal of computational electronics 9 (3), 135-140, 2010 | 25 | 2010 |
| Advanced modeling of oxide defects W Goes, F Schanovsky, T Grasser Bias temperature instability for devices and circuits, 409-446, 2014 | 22 | 2014 |
| The Significance of Nonlinear Screening and the pH Interference Mechanism in Field-Effect Transistor Molecular Sensors S Santermans, F Schanovsky, M Gupta, G Hellings, M Heyns, W Van Roy, ... ACS sensors 6 (3), 1049-1056, 2021 | 20 | 2021 |
| Understanding the ISPP slope in charge trap flash memory and its impact on 3-D NAND scaling D Verreck, A Arreghini, F Schanovsky, G Rzepa, Z Stanojevic, ... 2021 IEEE International Electron Devices Meeting (IEDM), 1-4, 2021 | 19 | 2021 |
| Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors T Grasser, B Stampfer, M Waltl, G Rzepa, K Rupp, F Schanovsky, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 2A. 2-1-2A. 2-10, 2018 | 17 | 2018 |
| On the microscopic limit of the modified reaction-diffusion model for the negative bias temperature instability F Schanovsky, T Grasser 2012 IEEE International Reliability Physics Symposium (IRPS), XT. 10.1-XT. 10.6, 2012 | 17 | 2012 |
| Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies G Rzepa, M Karner, O Baumgartner, G Strof, F Schanovsky, F Mitterbauer, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2021 | 13 | 2021 |
| Understanding correlated drain and gate current fluctuations W Goes, M Toledano-Luque, O Baumgartner, M Bina, F Schanovsky, ... Proceedings of the 20th IEEE International Symposium on the Physical and …, 2013 | 13 | 2013 |
| Semi-automated extraction of the distribution of single defects for nMOS transistors B Stampfer, F Schanovsky, T Grasser, M Waltl Micromachines 11 (4), 446, 2020 | 12 | 2020 |
| A detailed evaluation of model defects as candidates for the bias temperature instability F Schanovsky, O Baumgartner, W Goes, T Grasser 2013 International Conference on Simulation of Semiconductor Processes and …, 2013 | 12 | 2013 |
