Marko Radosavljevic

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Han Wui ThenIntel CorporationDirección de correo verificada de intel.com
Ravi PillarisettyIntel CorporationDirección de correo verificada de intel.com
Sansaptak DasguptaHardware Engineer, AppleDirección de correo verificada de apple.com
Niloy MukherjeeEugenus, Inc.Dirección de correo verificada de eugenustech.com
Suman DattaJoseph M. Pettit Chair ProfessorDirección de correo verificada de gatech.edu
Paul B FischerIntel CorporationDirección de correo verificada de intel.com
Seung Hoon SungSenior research staff of Components Research, Intel CorporationDirección de correo verificada de intel.com
Prof. Mantu HudaitAssoc. Prof. of ECE, Virginia Tech; Past: Intel Corporation, Ohio State U, IISc-Bangalore, IIT-KGPDirección de correo verificada de vt.edu
Nicole K. ThomasDirección de correo verificada de intel.com
Phaedon AvourisIBM Fellow, Emeritus and University of Minnesota, MinneapolisDirección de correo verificada de umn.edu
a.t. charlie Johnsonrebecca w bushnell professor of physics and astronomy, university of pennsylvaniaDirección de correo verificada de physics.upenn.edu
Pratik KoiralaComponents Research, Intel CorporationDirección de correo verificada de intel.com
Joerg AppenzellerProfessor of Electrical and Computer Engineering, Purdue UniversityDirección de correo verificada de purdue.edu
Ian A YoungIntel CorporationDirección de correo verificada de intel.com
jacques lefebvreUniversité LavalDirección de correo verificada de ulaval.ca
Philip C. NelsonUniversity of PennsylvaniaDirección de correo verificada de physics.upenn.edu
Samuel James BaderResearch Engineer, IntelDirección de correo verificada de cornell.edu
Marcus FreitagIBM T. J. Watson Research CenterDirección de correo verificada de us.ibm.com
rahul ramaswamyUniversity at Buffalo, State univeristy of New YorkDirección de correo verificada de buffalo.edu
Dmitri E. NikonovDistinguished Engineer, Kepler ComputingDirección de correo verificada de intel.com

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Marko Radosavljevic

Intel Corporation

Dirección de correo verificada de intel.com - Página principal

semiconductor devices nanotechnology


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Carbon nanotube composites for thermal management MJ Biercuk, MC Llaguno, M Radosavljevic, JK Hyun, AT Johnson, ... Applied Physics Letters 80 (15), 2767-2769, 2002	2476	2002
Group III-N transistors for system on chip (SOC) architecture integrating power management and radio frequency circuits HW Then, R Chau, V Rao, N Mukherjee, M Radosavljevic, R Pillarisetty, ... US Patent 10,290,614, 2019	1469*	2019
Biological physics P Nelson WH Freeman, 2004	1140	2004
Benchmarking nanotechnology for high-performance and low-power logic transistor applications R Chau, S Datta, M Doczy, B Doyle, B Jin, J Kavalieros, A Majumdar, ... IEEE Transactions on Nanotechnology 4 (2), 153-158, 2005	881	2005
Nonvolatile molecular memory elements based on ambipolar nanotube field effect transistors M Radosavljević, M Freitag, KV Thadani, AT Johnson Nano Letters 2 (7), 761-764, 2002	498	2002
Fabrication, characterization, and physics of III–V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing G Dewey, B Chu-Kung, J Boardman, JM Fastenau, J Kavalieros, R Kotlyar, ... 2011 International electron devices meeting, 33.6. 1-33.6. 4, 2011	452	2011
Tunneling versus thermionic emission in one-dimensional semiconductors J Appenzeller, M Radosavljević, J Knoch, P Avouris Physical review letters 92 (4), 48301, 2004	390	2004
Tri-gate transistor architecture with high-k gate dielectrics, metal gates and strain engineering J Kavalieros, B Doyle, S Datta, G Dewey, M Doczy, B Jin, D Lionberger, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 50-51, 2006	350	2006
Block contact architectures for nanoscale channel transistors M Radosavljevic, A Majumdar, BS Doyle, J Kavalieros, ML Doczy, ... US Patent 7,898,041, 2011	340*	2011
Transistor gate-channel arrangements GW Dewey, R Rios, S Shivaraman, M Radosavljevic, KE Millard, ... US Patent App. 16/080,101, 2019	293	2019
Advanced high-K gate dielectric for high-performance short-channel In_0.7Ga_0.3As quantum well field effect transistors on silicon substrate for low power logic … M Radosavljevic, B Chu-Kung, S Corcoran, G Dewey, MK Hudait, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009	278	2009
Drain voltage scaling in carbon nanotube transistors M Radosavljević, S Heinze, J Tersoff, P Avouris Applied Physics Letters 83, 2435, 2003	268	2003
Block contact architectures for nanoscale channel transistors M Radosavljevic, A Majumdar, BS Doyle, J Kavalieros, ML Doczy, ... US Patent 7,279,375, 2007	223	2007
Block contact architectures for nanoscale channel transistors M Radosavljevic, A Majumdar, BS Doyle, J Kavalieros, ML Doczy, ... US Patent 7,279,375, 2007	223	2007
Application of high-< i> κ</i> gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology R Chau, J Brask, S Datta, G Dewey, M Doczy, B Doyle, J Kavalieros, B Jin, ... Microelectronic engineering 80, 1-6, 2005	218	2005
3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact … HW Then, S Dasgupta, M Radosavljevic, P Agababov, I Ban, R Bristol, ... 2019 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 2019	217	2019
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture M Radosavljevic, R Pillarisetty, G Dewey, N Mukherjee, J Kavalieros, ... US Patent 9,123,567, 2015	213	2015
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture M Radosavljevic, R Pillarisetty, G Dewey, N Mukherjee, J Kavalieros, ... US Patent 9,123,567, 2015	213	2015
Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to … M Radosavljevic, G Dewey, D Basu, J Boardman, B Chu-Kung, ... 2011 International Electron Devices Meeting, 33.1. 1-33.1. 4, 2011	196	2011
Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors S Heinze, M Radosavljević, J Tersoff, P Avouris Physical Review B 68 (23), 235418, 2003	196	2003

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