Jean-Daniel Ganiere

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Benoit DeveaudVice Provost Research Ecole Polytechnique PalaiseauDirección de correo verificada de polytechnique.edu
Pierre CorfdirABB Corporate ResearchDirección de correo verificada de ch.abb.com
Nicolas GrandjeanInstitute of Physics, EPFLDirección de correo verificada de epfl.ch
Samuel SondereggerAttolightDirección de correo verificada de attolight.com
Pierre LefebvreDirecteur de Recherche CNRS. Physics. Laboratoire Charles Coulomb (L2C), Université de MontpellierDirección de correo verificada de umontpellier.fr
Piotr KossackiInstitute of Experimental Physics, Faculty of Physics, University of WarsawDirección de correo verificada de fuw.edu.pl
Stefan HaackeUniversité de Strasbourg - IPCMSDirección de correo verificada de unistra.fr
Lucia SORBANEST, Istituto Nanoscienze-CNR and Scuola Normale SuperioreDirección de correo verificada de sns.it
Lorenzo PavesiProfessor of Physics, University of TrentoDirección de correo verificada de unitn.it
Michele MeranoUniversità degli studi di PadovaDirección de correo verificada de unipd.it
Eric FeltinnovaganDirección de correo verificada de novagan.com
Gwénolé JacopinInstitut Néel - CNRS, Univ. Grenoble Alpes, FranceDirección de correo verificada de epfl.ch
Raphaël ButtéSenior scientist, Institute of Physics, EPFL, SwitzerlandDirección de correo verificada de epfl.ch
Stéphane CollinCentre de Nanosciences et de Nanotechnologies (C2N, CNRS, Université Paris-Saclay)Dirección de correo verificada de c2n.upsaclay.fr
Silvia RubiniCNRDirección de correo verificada de iom.cnr.it
Georg RossbachOSRAM Opto Semiconductors GmbH, Regensburg, GermanyDirección de correo verificada de osram-os.com
Jerome FaistETH ZurichDirección de correo verificada de phys.ethz.ch
Pelucchi EmanueleTyndall National Institute, University College CorkDirección de correo verificada de tyndall.ie
Henryk TeisseyreInstitute of Physics of the Polish Academy of SciencesDirección de correo verificada de ifpan.edu.pl
Stefan HeunNEST, Istituto Nanoscienze-CNR and Scuola Normale SuperioreDirección de correo verificada de nano.cnr.it

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Jean-Daniel Ganiere

MER, EPFL

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cathodoluminescence


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Engineering the spatial confinement of exciton polaritons in semiconductors RI Kaitouni, O El Daïf, A Baas, M Richard, T Paraiso, P Lugan, T Guillet, ... Physical Review B—Condensed Matter and Materials Physics 74 (15), 155311, 2006	208	2006
Probing carrier dynamics in nanostructures by picosecond cathodoluminescence M Merano, S Sonderegger, A Crottini, S Collin, P Renucci, E Pelucchi, ... Nature 438 (7067), 479-482, 2005	200	2005
High spatial resolution picosecond cathodoluminescence of InGaN quantum wells S Sonderegger, E Feltin, M Merano, A Crottini, JF Carlin, R Sachot, ... Applied Physics Letters 89 (23), 2006	108	2006
Charged exciton dynamics in GaAs quantum wells G Finkelstein, V Umansky, I Bar-Joseph, V Ciulin, S Haacke, JD Ganiere, ... Physical Review B 58 (19), 12637, 1998	105	1998
Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy P Corfdir, P Lefebvre, J Levrat, A Dussaigne, JD Ganière, D Martin, ... Journal of Applied Physics 105 (4), 2009	94	2009
Role of point defects in the silicon diffusion in GaAs and Al_0.3Ga_0.7As and in the related superlattice disordering L Pavesi, NH Ky, JD Ganiere, FK Reinhart, N Baba‐Ali, I Harrison, B Tuck, ... Journal of applied physics 71 (5), 2225-2237, 1992	92	1992
On the size dependence of the optical absorption due to small metal particles JD Ganière, R Rechsteiner, MA Smithard Solid State Communications 16 (1), 113-115, 1975	86	1975
Radiative behavior of negatively charged excitons in CdTe-based quantum wells: A spectral and temporal analysis V Ciulin, P Kossacki, S Haacke, JD Ganiere, B Deveaud, A Esser, ... Physical Review B 62 (24), R16310, 2000	85	2000
Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates P Corfdir, P Lefebvre, J Ristić, P Valvin, E Calleja, A Trampert, JD Ganière, ... Journal of Applied Physics 105 (1), 2009	81	2009
Exciton drift in semiconductors under uniform strain gradients: Application to bent ZnO microwires X Fu, G Jacopin, M Shahmohammadi, R Liu, M Benameur, JD Ganiere, ... ACS nano 8 (4), 3412-3420, 2014	80	2014
Fluorescence yield and lifetime of isolated polydiacetylene chains: Evidence for a one-dimensional exciton band in a conjugated polymer R Lécuiller, J Berréhar, JD Ganiere, C Lapersonne-Meyer, P Lavallard, ... Physical Review B 66 (12), 125205, 2002	80	2002
A model for the Zn diffusion in GaAs by a photoluminescence study NH Ky, L Pavesi, D Araujo, JD Ganiere, FK Reinhart Journal of applied physics 69 (11), 7585-7593, 1991	75	1991
High-temperature Mott transition in wide-band-gap semiconductor quantum wells G Rossbach, J Levrat, G Jacopin, M Shahmohammadi, JF Carlin, ... Physical Review B 90 (20), 201308, 2014	65	2014
Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN P Corfdir, J Ristić, P Lefebvre, T Zhu, D Martin, A Dussaigne, JD Ganière, ... Applied Physics Letters 94 (20), 2009	65	2009
Quantitative analysis of electron‐beam‐induced current profiles across p–n junctions in GaAs/Al_0.4Ga_0.6As heterostructures JM Bonard, JD Ganière Journal of Applied Physics 79 (9), 6987-6994, 1996	64	1996
Ordered magnetic phase in Cd1− xMnxTe/Cd1− y− zMgyZnzTe: N heterostructures: magnetooptical studies P Kossacki, D Ferrand, A Arnoult, J Cibert, S Tatarenko, A Wasiela, ... Physica E: Low-dimensional Systems and Nanostructures 6 (1-4), 709-712, 2000	63	2000
Characterization of GaAs/(GaAs)_n(AlAs)_m surface‐emitting laser structures through reflectivity and high‐resolution electron microscopy measurements J Faist, JD Ganiere, P Buffat, S Sampson, FK Reinhart Journal of applied physics 66 (3), 1023-1032, 1989	62	1989
Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around m A Markus, A Fiore, JD Ganiere, U Oesterle, JX Chen, B Deveaud, ... Applied physics letters 80 (6), 911-913, 2002	58	2002
Epitaxial growth of Si_1−x−yGe_xC_y alloy layers on (100) Si by rapid thermal chemical vapor deposition using methylsilane J Mi, P Warren, M Gailhanou, JD Ganière, M Dutoit, PH Jouneau, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996	52	1996
Transverse and longitudinal space-charge-induced broadenings of ultrafast electron packets S Collin, M Merano, M Gatri, S Sonderegger, P Renucci, JD Ganière, ... Journal of applied physics 98 (9), 2005	51	2005

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