| Electronic synapses made of layered two-dimensional materials Y Shi, X Liang, B Yuan, V Chen, H Li, F Hui, Z Yu, F Yuan, E Pop, ... Nature Electronics 1 (8), 458-465, 2018 | 617 | 2018 |
| IEEE International Electron Devices Meeting (IEDM) G Pitner, Z Zhang, Q Lin, SK Su, C Gilardi, C Kuo, H Kashyap, T Weiss, ... IEEE, San Francisco, CA, USA, 2020 | 39 | 2020 |
| Sub-0.5 nm interfacial dielectric enables superior electrostatics: 65 mV/dec top-gated carbon nanotube FETs at 15 nm gate length G Pitner, Z Zhang, Q Lin, SK Su, C Gilardi, C Kuo, H Kashyap, T Weiss, ... 2020 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2020 | 32 | 2020 |
| High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with … Z Lin, M Si, YC Luo, X Lyu, A Charnas, Z Chen, Z Yu, W Tsai, PC McIntyre, ... 2021 IEEE International Electron Devices Meeting (IEDM), 17.4. 1-17.4. 4, 2021 | 26 | 2021 |
| Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf0.5Zr0.5O2 Thin Film Capacitors B Saini, F Huang, YY Choi, Z Yu, V Thampy, JD Baniecki, W Tsai, ... Advanced Electronic Materials 9 (6), 2300016, 2023 | 17 | 2023 |
| High peak power (≥ 10 mW) quantum cascade superluminescent emitter NL Aung, Z Yu, Y Yu, PQ Liu, X Wang, JY Fan, M Troccoli, CF Gmachl Applied Physics Letters 105 (22), 2014 | 16 | 2014 |
| CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories Z Yu, B Saini, PJ Liao, YK Chang, DH Hou, CH Nien, YC Shih, SH Yeong, ... Advanced Electronic Materials 8 (7), 2101258, 2022 | 13 | 2022 |
| Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors F Huang, M Passlack, Z Yu, Q Lin, A Babadi, VDH Hou, PC McIntyre, ... IEEE Electron Device Letters 43 (2), 212-215, 2021 | 12 | 2021 |
| Reduced HfO₂ Resistive Memory Variability by Inserting a Thin SnO₂ as Oxygen Stopping Layer WC Chen, S Qin, Z Yu, HSP Wong IEEE Electron Device Letters 42 (12), 1778-1781, 2021 | 9 | 2021 |
| Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering F Huang, B Saini, Z Yu, C Yoo, V Thampy, X He, JD Baniecki, W Tsai, ... ACS Applied Materials & Interfaces 15 (43), 50246-50253, 2023 | 8 | 2023 |
| Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited HafniaZirconia Alloys PCMI Zhouchangwan Yu, Balreen Saini, Yunzhi Liu, Fei Huang, Apurva Mehta ... ACS Applied Materials & Interfaces, 2022 | 8 | 2022 |
| The field-dependence endurance model and its mutual effect in Hf-based ferroelectrics YK Chang, PJ Liao, SH Yeong, YM Lin, JH Lee, CT Lin, Z Yu, W Tsai, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 3A. 1-1-3A. 1-5, 2022 | 7 | 2022 |
| Potassium hydroxide mixed with lithium hydroxide: An advanced electrolyte for oxygen evolution reaction T Han, Y Shi, Z Yu, B Shin, M Lanza Solar Rrl 3 (10), 1900195, 2019 | 7 | 2019 |
| Image-to-image translation with conditional-GAN J Hu, W Yu, Z Yu CS230: Deep Learning, Spring, 2018 | 7 | 2018 |
| Improved gradual resistive switching range and 1000× on/off ratio in HfOx RRAM achieved with a Ge2Sb2Te5 thermal barrier R Islam, S Qin, S Deshmukh, Z Yu, C Köroğlu, AI Khan, K Schauble, ... Applied Physics Letters 121 (8), 2022 | 5 | 2022 |
| Mechanism of polarization “Wake-Up” in ferroelectric Hafnia-Zirconia thin films B Saini, F Huang, YY Choi, Z Yu, JD Baniecki, V Thampy, W Tsai, ... Solid-State Electronics 208, 108714, 2023 | 2 | 2023 |
| CeO2-Doped Hf0.5Zr0.5O2 Ferroelectrics for High Endurance Embedded Memory Applications Z Yu, B Saini, PJ Liao, YK Chang, V Hou, CH Nien, YC Shih, SH Yeong, ... 2022 International Symposium on VLSI Technology, Systems and Applications …, 2022 | 2 | 2022 |
| Cerium-doped ferroelectric materials and related devices and methods PC McIntyre, W Tsai, JD Baniecki, Z Yu, B Saini US Patent 12,166,098, 2024 | | 2024 |
| CeO</sub> 2<//sub> Doping of Hf</sub> 0.5<//sub> Zr</sub> 0.5<//sub> O</sub> 2<//sub> Thin Films for High Endurance Ferroelectric Memories Z Yu, B Saini, PJ Liao, YK Chang, DH Hou, CH Nien, YC Shih, SH Yeong, ... Advanced Electronic Materials 8 (7), 2022 | | 2022 |
| Hafnium Oxide Based Ferroelectric Materials for Memory Applications Z Yu Stanford University, 2022 | | 2022 |
H.-S. Philip WongProfessor of Electrical Engineering, Stanford UniversityDirección de correo verificada de stanford.edu