Ultrahigh energy storage in superparaelectric relaxor ferroelectrics H Pan, S Lan, S Xu, Q Zhang, H Yao, Y Liu, F Meng, EJ Guo, L Gu, D Yi, ...
Science 374 (6563), 100-104, 2021
485 2021 A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors AQ Jiang, C Wang, KJ Jin, XB Liu, JF Scott, CS Hwang, TA Tang, HB Lu, ...
Advanced Materials 23 (10), 1277-1281, 2011
476 2011 Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films C Wang, K Jin, Z Xu, L Wang, C Ge, H Lu, H Guo, M He, G Yang
Applied Physics Letters 98 (19), 2011
398 2011 Artificial synapses emulated by an electrolyte‐gated tungsten‐oxide transistor JT Yang, C Ge, JY Du, HY Huang, M He, C Wang, HB Lu, GZ Yang, KJ Jin
Advanced Materials 30 (34), 1801548, 2018
381 2018 Low-threshold topological nanolasers based on the second-order corner state W Zhang, X Xie, H Hao, J Dang, S Xiao, S Shi, H Ni, Z Niu, C Wang, K Jin, ...
Light: Science & Applications 9 (1), 109, 2020
265 2020 Reproducible ultrathin ferroelectric domain switching for high‐performance neuromorphic computing J Li, C Ge, J Du, C Wang, G Yang, K Jin
Advanced Materials 32 (7), 1905764, 2020
211 2020 Photo-induced non-volatile VO2 phase transition for neuromorphic ultraviolet sensors G Li, D Xie, H Zhong, Z Zhang, X Fu, Q Zhou, Q Li, H Ni, J Wang, E Guo, ...
Nature communications 13 (1), 1729, 2022
207 2022 Positive colossal magnetoresistance from interface effect in K Jin, H Lu, Q Zhou, K Zhao, B Cheng, Z Chen, Y Zhou, GZ Yang
Physical Review B—Condensed Matter and Materials Physics 71 (18), 184428, 2005
184 2005 Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories Z Xu, K Jin, L Gu, Y Jin, C Ge, C Wang, H Guo, H Lu, R Zhao, G Yang
small 8 (8), 1279-1284, 2012
175 2012 A ferrite synaptic transistor with topotactic transformation C Ge, C Liu, Q Zhou, Q Zhang, J Du, J Li, C Wang, L Gu, G Yang, K Jin
Advanced Materials 31 (19), 1900379, 2019
162 2019 Interfacial oxygen vacancies as a potential cause of hysteresis in perovskite solar cells F Zhang, W Ma, H Guo, Y Zhao, X Shan, K Jin, H Tian, Q Zhao, D Yu, X Lu, ...
Chemistry of Materials 28 (3), 802-812, 2016
148 2016 Electrolyte‐gated synaptic transistor with oxygen ions HY Huang, C Ge, QH Zhang, CX Liu, JY Du, JK Li, C Wang, L Gu, ...
Advanced Functional Materials 29 (29), 1902702, 2019
132 2019 Pressure-induced monotonic enhancement of T c to over 30 K in superconducting Pr0.82 Sr0.18 NiO2 thin films NN Wang, MW Yang, Z Yang, KY Chen, H Zhang, QH Zhang, ZH Zhu, ...
Nature communications 13 (1), 4367, 2022
131 2022 Effects of interfacial polarization on the dielectric properties of BiFeO3 thin film capacitors GZ Liu, C Wang, CC Wang, J Qiu, M He, J Xing, KJ Jin, HB Lu, GZ Yang
Applied Physics Letters 92 (12), 2008
126 2008 Oxygen vacancy induced room-temperature metal–insulator transition in nickelate films and its potential application in photovoltaics L Wang, S Dash, L Chang, L You, Y Feng, X He, K Jin, Y Zhou, HG Ong, ...
ACS applied materials & interfaces 8 (15), 9769-9776, 2016
119 2016 A robust neuromorphic vision sensor with optical control of ferroelectric switching J Du, D Xie, Q Zhang, H Zhong, F Meng, X Fu, Q Sun, H Ni, T Li, E Guo, ...
Nano Energy 89, 106439, 2021
118 2021 Dember effect induced photovoltage in perovskite pn heterojunctions KJ Jin, K Zhao, HB Lu, L Liao, GZ Yang
Applied Physics Letters 91 (8), 2007
116 2007 High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p–n junctions HB Lu, SY Dai, ZH Chen, YL Zhou, BL Cheng, KJ Jin, LF Liu, GZ Yang, ...
Applied Physics Letters 86 (3), 2005
116 2005 Picosecond photoelectric characteristic in La0. 7Sr0. 3MnO3∕ Si pn junctions HB Lu, KJ Jin, YH Huang, M He, K Zhao, BL Cheng, ZH Chen, YL Zhou, ...
Applied Physics Letters 86 (24), 2005
115 2005 Cavity quantum electrodynamics with second‐order topological corner state X Xie, W Zhang, X He, S Wu, J Dang, K Peng, F Song, L Yang, H Ni, Z Niu, ...
Laser & Photonics Reviews 14 (8), 1900425, 2020
106 2020 