| Reliability and failure analysis in power GaN-HEMTs: An overview M Meneghini, I Rossetto, C De Santi, F Rampazzo, A Tajalli, A Barbato, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 3B-2.1-3B-2.8, 2017 | 123 | 2017 |
| Degradation mechanisms of GaN HEMTs with p-type gate under forward gate bias overstress M Ruzzarin, M Meneghini, A Barbato, V Padovan, O Haeberlen, ... IEEE Transactions on Electron Devices 65 (7), 2778-2783, 2018 | 78 | 2018 |
| Design and In-orbit Demonstration of REGULUS, an Iodine electric propulsion system N Bellomo, M Magarotto, M Manente, F Trezzolani, R Mantellato, ... CEAS Space Journal 14 (1), 79-90, 2022 | 71 | 2022 |
| Potential induced degradation of N-type bifacial silicon solar cells: An investigation based on electrical and optical measurements M Barbato, A Barbato, M Meneghini, G Tavernaro, M Rossetto, ... Solar Energy Materials and Solar Cells 168, 51-61, 2017 | 45 | 2017 |
| Fast System to measure the dynamic on‐resistance of on‐wafer 600 V normally off GaN HEMTs in hard‐switching application conditions A Barbato, M Barbato, M Meneghini, M Silvestri, T Detzel, O Haeberlen, ... IET Power Electronics 13 (11), 2390-2397, 2020 | 19 | 2020 |
| ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping E Canato, M Meneghini, A Nardo, F Masin, A Barbato, M Barbato, ... Microelectronics Reliability 100, 113334, 2019 | 19 | 2019 |
| Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs I Rossetto, M Meneghini, D Bisi, A Barbato, M Van Hove, D Marcon, ... Microelectronics Reliability 55 (9-10), 1692-1696, 2015 | 18 | 2015 |
| Enhancement of microsatellites' mission capabilities: integration of REGULUS electric propulsion module into UniSat-7 N Bellomo, M Manente, F Trezzolani, A Gloder, A Selmo, R Mantellato, ... Proceedings of the 70th International Astronautical Congress (IAC) 2019, 2019 | 17 | 2019 |
| A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects N Modolo, M Meneghini, A Barbato, A Nardo, C De Santi, G Meneghesso, ... Microelectronics Reliability 114, 113830, 2020 | 12 | 2020 |
| Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects M Meneghini, A Barbato, M Borga, C De Santi, M Barbato, S Stoffels, ... 2018 IEEE International Electron Devices Meeting (IEDM), 30.5. 1-30.5. 4, 2018 | 12 | 2018 |
| REGULUS: iodine fed plasma propulsion system for small satellites M Manente, F Trezzolani, R Mantellato, D Scalzi, A Schiavon, N Souhair, ... Proceedings of the 36th International Electric Propulsion Conference, Vienna …, 2019 | 11 | 2019 |
| Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements A Nardo, M Meneghini, A Barbato, C De Santi, G Meneghesso, E Zanoni, ... Applied Physics Express 13 (7), 074003, 2020 | 10 | 2020 |
| Reverse bias degradation of metal wrap through silicon solar cells M Barbato, A Barbato, M Meneghini, A Cester, G Mura, D Tonini, A Voltan, ... Solar Energy Materials and Solar Cells 147, 288-294, 2016 | 7 | 2016 |
| Charge trapping and stability of E-mode p-gate GaN HEMTs under soft-and hard-switching conditions F Masin, M Meneghini, E Canato, A Barbato, C De Santi, A Stockman, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020 | 6 | 2020 |
| E-REGULUS: development of a 150 W prototype of magnetically enhanced plasma thruster M Duzzi, M Manente, F Trezzolani, N Bellomo, A Barbato, L Cappellini, ... Proceedings of the 72nd International Astronautical Congress (IAC), 2021 | 5 | 2021 |
| Secondary electroluminescence of GaN-on-Si RF HEMTs: Demonstration and physical origin M Meneghini, A Barbato, I Rossetto, A Favaron, M Silvestri, S Lavanga, ... IEEE Transactions on Electron Devices 64 (3), 1032-1037, 2017 | 5 | 2017 |
| Durability of bifacial solar modules under potential induced degradation: role of the encapsulation materials M Barbato, M Meneghini, A Barbato, G Tavernaro, M Rossetto, ... Proc. of the PVSEC2016, 32th European Photovoltaic Solar Energy Conference …, 2016 | 5 | 2016 |
| Potential induced degradation in high-efficiency bifacial solar cells M Barbato, M Meneghini, A Cester, A Barbato, G Meneghesso, ... 2016 IEEE International Reliability Physics Symposium (IRPS), PV-2-1-PV-2-5, 2016 | 4 | 2016 |
| Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy A Nardo, M Meneghini, A Barbato, C De Santi, G Meneghesso, E Zanoni, ... Microelectronics Reliability 114, 113842, 2020 | 3 | 2020 |
| REGULUS: Integration and Testing of an iodine Electric Propulsion System N Bellomo, M Magarotto, M Manente, F Trezzolani, R Mantellato, ... Space Propulsion Conference, 0 | 3 | |
