A review on emerging negative capacitance field effect transistor for low power electronics SB Rahi, S Tayal, AK Upadhyay
Microelectronics Journal 116, 105242, 2021
61 2021 Emerging low-power semiconductor devices: Applications for future technology nodes S Tayal, AK Upadhyay, D Kumar, SB Rahi
CRC Press, 2022
42 2022 Recent progress on negative capacitance tunnel FET for low-power applications: Device perspective AK Upadhyay, SB Rahi, S Tayal, YS Song
Microelectronics Journal 129, 105583, 2022
40 2022 Incorporating bottom-up approach into device/circuit co-design for SRAM-based cache memory applications S Tayal, B Smaani, SB Rahi, AK Upadhyay, S Bhattacharya, J Ajayan, ...
IEEE Transactions on Electron Devices 69 (11), 6127-6132, 2022
33 2022 A unified scalable quasi-ballistic transport model of GFET for circuit simulations AK Upadhyay, AK Kushwaha, SK Vishvakarma
IEEE Transactions on Electron Devices 65 (2), 739-746, 2017
25 2017 Thermal-aware IC chip design by combining high thermal conductivity materials and GAA MOSFET YS Song, S Tayal, SB Rahi, JH Kim, AK Upadhyay, BG Park
2022 5th International Conference on Circuits, Systems and Simulation (ICCSS …, 2022
21 2022 Performance comparison of nanosheet FET, CombFET, and TreeFET: device and circuit perspective NA Kumari, VB Sreenivasulu, V Vijayvargiya, AK Upadhyay, J Ajayan, ...
IEEE Access 12, 9563-9571, 2024
15 2024 Impact of drain underlap and high bandgap strip on cylindrical gate all around tunnel FET and its influence on analog/RF performance A Dutt, S Tiwari, AK Upadhyay, R Mathew, A Beohar
Silicon 14 (15), 9789-9796, 2022
13 2022 Design and Analysis of Multibit Multiply and Accumulate (MAC) unit: An Analog In-Memory Computing Approach S Ananthanarayanan, BS Reniwal, A Upadhyay
2023 36th International Conference on VLSI Design and 2023 22nd …, 2023
11 2023 Explicit model of channel charge, backscattering, and mobility for graphene FET in quasi-ballistic regime AK Upadhyay, AK Kushwaha, P Rastogi, YS Chauhan, SK Vishvakarma
IEEE Transactions on Electron Devices 65 (12), 5468-5474, 2018
10 2018 A compact electrical modelling for top-gated doped graphene field-effect transistor AK Upadhyay, N Chauhan, SK Vishvakarma
IETE Journal of Research 64 (3), 317-323, 2018
7 2018 Design techniques for high reliability FET by incorporating new materials and electrical/thermal co-optimization YS Song, SB Rahi, S Tayal, A Upadhyay, JH Kim
Emerging Materials: Design, Characterization and Applications, 133-154, 2022
6 2022 An improved current mode logic latch for high‐speed applications M Kumawat, AK Upadhyay, S Sharma, R Kumar, G Singh, ...
International Journal of Communication Systems 33 (13), e4118, 2020
6 2020 Design and analysis of novel La: HfO2 gate stacked ferroelectric tunnel FET for non-volatile memory applications N Paras, SB Rahi, AK Upadhyay, M Bharti, YS Song
Memories-Materials, Devices, Circuits and Systems 7, 100101, 2024
4 2024 Gate stack analysis of nanosheet FET for analog and digital circuit applications NA Kumari, V Vijayvargiya, AK Upadhyay, VB Sreenivasulu, V Narendar, ...
ECS Journal of Solid State Science and Technology 12 (11), 113008, 2023
4 2023 High-Performance Tunnel Field-Effect Transistors (TFETs) for Future Low Power Applications R Mathew, A Beohar, AK Upadhyay
Semiconductor Devices and Technologies for Future Ultra Low Power …, 2021
4 2021 Design and Analysis of dual-k spacer CombFET for Digital and Synaptic Applications NA Kumari, SR Karumuri, J Ajayan, V Vijayvargiya, AK Upadhyay, M Uma, ...
IEEE Access, 2024
2 2024 Compact modeling of junctionless gate-all-around MOSFET for circuit simulation: Scope and challenges B Smaani, F Nafa, AK Upadhyay, S Labiod, SB Rahi, MS Benlatreche, ...
Device Circuit Co-Design Issues in FETs, 57-78, 2024
2 2024 A compact model of the backscattering coefficient and mobility of a graphene FET for and h-BN substrates AK Upadhyay, D Gupta, R Mathew, A Beohar
Journal of Computational Electronics 22 (1), 88-95, 2023
2 2023 Recent development in analytical model for graphene field effect transistors for RF circuit applications AK Upadhyay, AK Kushwaha, D Gupta, SK Vishvakarma
arXiv preprint arXiv:2101.01955, 2021
2 2021