Selective gas detection using a carbon nanotube sensor S Chopra, K McGuire, N Gothard, AM Rao, A Pham
Applied Physics Letters 83 (11), 2280-2282, 2003
491 2003 Selective formation of silicon carbon epitaxial layer Z Ye, S Chopra, A Lam, Y Kim
US Patent 7,776,698, 2010
489 2010 Phosphorus containing Si epitaxial layers in N-type source/drain junctions S Chopra, Z Ye, Y Kim
US Patent 7,960,236, 2011
485 2011 Carbon-nanotube-based resonant-circuit sensor for ammonia S Chopra, A Pham, J Gaillard, A Parker, AM Rao
Applied physics letters 80 (24), 4632-4634, 2002
426 2002 Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts A Agrawal, J Lin, M Barth, R White, B Zheng, S Chopra, S Gupta, K Wang, ...
Applied Physics Letters 104 (11), 2014
184 2014 Punchthrough-diode-based bipolar RRAM selector by Si epitaxy VSS Srinivasan, S Chopra, P Karkare, P Bafna, S Lashkare, P Kumbhare, ...
IEEE Electron Device Letters 33 (10), 1396-1398, 2012
115 2012 Gas-induced variation in the dielectric properties of carbon nanotube bundles for selective sensing F Picaud, R Langlet, M Arab, M Devel, C Girardet, S Natarajan, S Chopra, ...
Journal of applied physics 97 (11), 2005
56 2005 High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for G Thareja, S Chopra, B Adams, Y Kim, S Moffatt, K Saraswat, Y Nishi
IEEE electron device letters 32 (7), 838-840, 2011
54 2011 High performance germanium n-MOSFET with antimony dopant activation beyond 1×1020 cm−3 G Thareja, J Liang, S Chopra, B Adams, N Patil, SL Cheng, A Nainani, ...
2010 International Electron Devices Meeting, 10.5. 1-10.5. 4, 2010
50 2010 Carbon nanotube based resonant-circuit sensor AM Rao, S Chopra
US Patent 6,997,039, 2006
47 2006 Role of intraventricular sodium nitroprusside in vasospasm secondary to aneurysmal subarachnoid haemorrhage: a 5-year prospective study with review of the literature A Agrawal, R Patir, Y Kato, S Chopra, H Sano, T Kanno
min-Minimally Invasive Neurosurgery 52 (01), 5-8, 2009
45 2009 METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER Z Ye, S Chopra, Y Kim
US Patent 20,110,277,934, 2011
42 2011 Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy S Chopra, MC Ozturk, V Misra, K McGuire, LE McNeil
Applied physics letters 88 (20), 2006
41 2006 Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices M Ozturk, V Misra, S Chopra
US Patent 7,211,458, 2007
37 2007 Low stress mechanical properties of silk fabric degummed by different methods S Chopra, R Chattopadhyay, ML Gulrajani
Journal of the Textile Institute 87 (3), 542-553, 1996
35 1996 High Tensile Strained In-Situ Phosphorus Doped Silicon Epitaxial Film for nMOS Applications Z Ye, S Chopra, R Lapena, Y Kim, S Kuppurao
Meeting Abstracts, 3233-3233, 2012
33 2012 Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10−9 Ω-cm2 using ultrathin TiO2−x interlayer between metal and silicon A Agrawal, J Lin, B Zheng, S Sharma, S Chopra, K Wang, A Gelatos, ...
2013 Symposium on VLSI Technology, T200-T201, 2013
25 2013 Method and apparatus for precleaning a substrate surface prior to epitaxial growth CS Olsen, TK Guarini, J Tobin, L Hawrylchak, P Stone, CW Lo, S Chopra
US Patent 9,683,308, 2017
21 2017 A bipolar RRAM selector with designable polarity dependent on-voltage asymmetry S Lashkare, P Karkare, P Bafna, MVS Raju, VSS Srinivasan, S Lodha, ...
2013 5th IEEE International Memory Workshop, 178-181, 2013
18 2013 Improved subthreshold characteristics in tunnel field-effect transistors using shallow junction technologies HY Chang, S Chopra, B Adams, J Li, S Sharma, Y Kim, S Moffatt, ...
Solid-state electronics 80, 59-62, 2013
18 2013 