Two-dimensional multibit optoelectronic memory with broadband spectrum distinction D Xiang, T Liu, J Xu, JY Tan, Z Hu, B Lei, Y Zheng, J Wu, AHC Neto, L Liu, ... Nature communications 9 (1), 1-8, 2018 | 266 | 2018 |
Colossal ultraviolet photoresponsivity of few-layer black phosphorus J Wu, GKW Koon, D Xiang, C Han, CT Toh, ES Kulkarni, I Verzhbitskiy, ... ACS nano 9 (8), 8070-8077, 2015 | 252 | 2015 |
Gap states assisted MoO 3 nanobelt photodetector with wide spectrum response D Xiang, C Han, J Zhang, W Chen Scientific reports 4 (1), 1-6, 2014 | 184 | 2014 |
Crested two-dimensional transistors T Liu, S Liu, KH Tu, H Schmidt, L Chu, D Xiang, J Martin, G Eda, CA Ross, ... Nature nanotechnology 14 (3), 223-226, 2019 | 169 | 2019 |
Water‐catalyzed oxidation of few‐layer black phosphorous in a dark environment Z Hu, Q Li, B Lei, Q Zhou, D Xiang, Z Lyu, F Hu, J Wang, Y Ren, R Guo, ... Angewandte Chemie International Edition 56 (31), 9131-9135, 2017 | 162 | 2017 |
Surface functionalization of black phosphorus via potassium toward high-performance complementary devices C Han, Z Hu, LC Gomes, Y Bao, A Carvalho, SJR Tan, B Lei, D Xiang, ... Nano letters 17 (7), 4122-4129, 2017 | 132 | 2017 |
Surface Transfer Doping‐Induced, High‐Performance Graphene/Silicon Schottky Junction‐Based, Self‐Powered Photodetector D Xiang, C Han, Z Hu, B Lei, Y Liu, L Wang, WP Hu, W Chen Small 11 (37), 4829-4836, 2015 | 124 | 2015 |
Nonvolatile and Programmable Photodoping in MoTe2 for Photoresist‐Free Complementary Electronic Devices T Liu, D Xiang, Y Zheng, Y Wang, X Wang, L Wang, J He, L Liu, W Chen Advanced materials 30 (52), 1804470, 2018 | 96 | 2018 |
Polarized Light‐Emitting Diodes Based on Anisotropic Excitons in Few‐Layer ReS2 J Wang, YJ Zhou, D Xiang, SJ Ng, K Watanabe, T Taniguchi, G Eda Advanced Materials 32 (32), 2001890, 2020 | 79 | 2020 |
Direct observation of semiconductor–metal phase transition in bilayer tungsten diselenide induced by potassium surface functionalization B Lei, Y Pan, Z Hu, J Zhang, D Xiang, Y Zheng, R Guo, C Han, L Wang, ... ACS nano 12 (2), 2070-2077, 2018 | 62 | 2018 |
Oxygen induced strong mobility modulation in few-layer black phosphorus C Han, Z Hu, A Carvalho, N Guo, J Zhang, F Hu, D Xiang, J Wu, B Lei, ... 2D Materials 4 (2), 021007, 2017 | 56 | 2017 |
Anomalous broadband spectrum photodetection in 2D rhenium disulfide transistor D Xiang, T Liu, J Wang, P Wang, L Wang, Y Zheng, Y Wang, J Gao, ... Advanced Optical Materials 7 (23), 1901115, 2019 | 48 | 2019 |
Significantly enhanced optoelectronic performance of tungsten diselenide phototransistor via surface functionalization B Lei, Z Hu, D Xiang, J Wang, G Eda, C Han, W Chen Nano Research 10 (4), 1282-1291, 2017 | 38 | 2017 |
Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study C Han, J Lin, D Xiang, C Wang, L Wang, W Chen Applied Physics Letters 103 (26), 263117, 2013 | 37 | 2013 |
Out‐of‐Plane Homojunction Enabled High Performance SnS2 Lateral Phototransistor J Gao, H Yang, H Mao, T Liu, Y Zheng, Y Wang, D Xiang, C Han, W Chen Advanced Optical Materials 8 (9), 1901971, 2020 | 35 | 2020 |
Black phosphorus inverter devices enabled by in-situ aluminum surface modification Y Zheng, Z Hu, C Han, R Guo, D Xiang, B Lei, Y Wang, J He, M Lai, ... Nano Research 12 (3), 531-536, 2019 | 32 | 2019 |
Tuning the electronic properties of ZnO nanowire field effect transistors via surface functionalization C Han, D Xiang, M Zheng, J Lin, J Zhong, CH Sow, W Chen Nanotechnology 26 (9), 095202, 2015 | 21 | 2015 |
Controlling phase transition in WSe 2 towards ideal n-type transistor Y Zheng, D Xiang, J Zhang, R Guo, W Wang, T Liu, L Loh, Y Wang, J Gao, ... Nano Research, 1-8, 2021 | 18 | 2021 |
Fused computing and storage in a 2D transistor D Xiang, T Liu, W Chen Nature nanotechnology 14 (7), 642-643, 2019 | 15 | 2019 |
Van der Waals Heterostructures with Tunable Tunneling Behavior Enabled by MoO3 Surface Functionalization Y Wang, D Xiang, Y Zheng, T Liu, X Ye, J Gao, H Yang, C Han, W Chen Advanced Optical Materials 8 (7), 1901867, 2020 | 14 | 2020 |