Carl-Mikael Zetterling

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Mikael ÖstlingKTH Royal Institute of TechnologyDirección de correo verificada de kth.se
Reza GhandiPrincipal Engineer at GE Aerospace ResearchDirección de correo verificada de ge.com
B. Gunnar MalmProfessor in Integrated Devices and Circuits, KTH Royal Institute of TechnologyDirección de correo verificada de kth.se
Luigia LanniKTH Royal Institute of TechnologyDirección de correo verificada de intel.com
Hyung-Seok LeeMassachusetts Institute of TechnologyDirección de correo verificada de etri.re.kr
Sang-Mo KOOProfessor, School of Electronics and Information Technology, Kwangwoon UniversityDirección de correo verificada de kw.ac.kr
Stephen PeartonProfessor of Materials Science and Engineering, University of FloridaDirección de correo verificada de mse.ufl.edu
Fan RenUniversity of Florida, Bell Lab, AT&TDirección de correo verificada de che.ufl.edu
Shuoben HouCoherent (Kista)Dirección de correo verificada de coherent.com
Ana RusuProfessor of Electronic Circuits and Systems, KTH Royal Institute of Technology, EECS SchoolDirección de correo verificada de kth.se
Saleh KargarraziCMU Electrical and Computer EngineeringDirección de correo verificada de andrew.cmu.edu
Anders HallenProfessorDirección de correo verificada de kth.se
Sergiy KhartsevKTH Royal Institute of TechnologyDirección de correo verificada de kth.se
Einar Örn SveinbjörnssonProfessor in Physics, University of IcelandDirección de correo verificada de hi.is
Per-Erik HellströmKTH Royal Institute of TechnologyDirección de correo verificada de kth.se
Ye TianKTH Royal Institute of TechnologyDirección de correo verificada de kth.se
Sethu Saveda SuvanamReOrbitDirección de correo verificada de reorbit.space
Alexander M. GrishinKTH Royal Institute of Technology, Stockholm, SwedenDirección de correo verificada de kth.se
Jun LuNational High Magnetic Field LaboratoryDirección de correo verificada de magnet.fsu.edu
Takeshi OhshimaNational Institutes for Quantum Science and TechnologyDirección de correo verificada de qst.go.jp

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Carl-Mikael Zetterling

KTH

Dirección de correo verificada de kth.se - Página principal

Silicon Carbide (SiC) devices and circuits high temperature electronics


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Process technology for silicon carbide devices CM Zetterling Iet, 2002	289	2002
SiC power devices—Present status, applications and future perspective M Östling, R Ghandi, CM Zetterling 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011	275	2011
Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in chemistries JJ Wang, ES Lambers, SJ Pearton, M Ostling, CM Zetterling, JM Grow, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (4 …, 1998	164	1998
500Bipolar Integrated OR/NOR Gate in 4H-SiC L Lanni, BG Malm, M Östling, CM Zetterling IEEE Electron Device Letters 34 (9), 1091-1093, 2013	115	2013
Ohmic contact properties of magnetron sputtered Ti3SiC2 on n-and p-type 4H-silicon carbide K Buchholt, R Ghandi, M Domeij, CM Zetterling, J Lu, P Eklund, L Hultman, ... Applied physics letters 98 (4), 2011	98	2011
A monolithic, 500 C operational amplifier in 4H-SiC bipolar technology R Hedayati, L Lanni, S Rodriguez, BG Malm, A Rusu, CM Zetterling IEEE Electron Device Letters 35 (7), 693-695, 2014	96	2014
Investigation of aluminum nitride grown by metal–organic chemical-vapor deposition on silicon carbide CM Zetterling, M Östling, K Wongchotigul, MG Spencer, X Tang, CI Harris, ... Journal of applied physics 82 (6), 2990-2995, 1997	95	1997
High-voltage 4H-SiC PiN diodes with etched junction termination extension R Ghandi, B Buono, M Domeij, G Malm, CM Zetterling, M Ostling IEEE Electron Device Letters 30 (11), 1170-1172, 2009	87	2009
Reduction of the Schottky barrier height on silicon carbide using Au nano-particles SK Lee, CM Zetterling, M Östling, I Åberg, MH Magnusson, K Deppert, ... Solid-State Electronics 46 (9), 1433-1440, 2002	83	2002
Low resistivity ohmic titanium carbide contacts to n-and p-type 4H-silicon carbide SK Lee, CM Zetterling, M Östling, JP Palmquist, H Högberg, U Jansson Solid-State Electronics 44 (7), 1179-1186, 2000	83	2000
Surface-passivation effects on the performance of 4H-SiC BJTs R Ghandi, B Buono, M Domeij, R Esteve, A Schöner, J Han, S Dimitrijev, ... IEEE Transactions on Electron Devices 58 (1), 259-265, 2010	82	2010
Ultradeep, low-damage dry etching of SiC H Cho, P Leerungnawarat, DC Hays, SJ Pearton, SNG Chu, RM Strong, ... Applied Physics Letters 76 (6), 739-741, 2000	79	2000
Modeling and characterization of current gain versus temperature in 4H-SiC power BJTs B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Ostling IEEE Transactions on Electron Devices 57 (3), 704-711, 2010	78	2010
Geometrical effects in high current gain 1100-V 4H-SiC BJTs M Domeij, HS Lee, E Danielsson, CM Zetterling, M Ostling, A Schoner IEEE electron device letters 26 (10), 743-745, 2005	78	2005
1200-V 5.2-4H-SiC BJTs With a High Common-Emitter Current Gain HS Lee, M Domeij, CM Zetterling, M Ostling, F Allerstam, ... IEEE Electron Device Letters 28 (11), 1007-1009, 2007	76	2007
ICP etching of SiC JJ Wang, ES Lambers, SJ Pearton, M Ostling, CM Zetterling, JM Grow, ... Solid-State Electronics 42 (12), 2283-2288, 1998	70	1998
Design and characterization of high-temperature ECL-based bipolar integrated circuits in 4H-SiC L Lanni, R Ghandi, BG Malm, CM Zetterling, M Ostling IEEE Transactions on Electron Devices 59 (4), 1076-1083, 2012	68	2012
2.8 kV, forward drop JBS diode with low leakage F Dahlquist, JO Svedberg, CM Zetterling, M Östling, B Breitholtz, ... Materials Science Forum 338, 1179-1182, 2000	63	2000
Via-hole etching for SiC P Leerungnawarat, DC Hays, H Cho, SJ Pearton, RM Strong, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999	62	1999
High density plasma via hole etching in SiC H Cho, KP Lee, P Leerungnawarat, SNG Chu, F Ren, SJ Pearton, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19 (4 …, 2001	61	2001

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