Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy Y Iwata, RG Banal, S Ichikawa, M Funato, Y Kawakami
Journal of Applied Physics 117 (7), 2015
99 2015 Carrier recombination in n-type 4H-SiC epilayers with long carrier lifetimes S Ichikawa, K Kawahara, J Suda, T Kimoto
Applied physics express 5 (10), 101301, 2012
67 2012 Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut S Ichikawa, K Shiomi, T Morikawa, D Timmerman, Y Sasaki, ...
Applied Physics Express 14 (3), 031008, 2021
66 2021 High quality semipolar (11¯ 02) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities S Ichikawa, Y Iwata, M Funato, S Nagata, Y Kawakami
Applied Physics Letters 104 (25), 2014
46 2014 Dominant Nonradiative Recombination Paths and Their Activation Processes in S Ichikawa, M Funato, Y Kawakami
Physical Review Applied 10 (6), 064027, 2018
40 2018 Self‐Limiting Growth of Ultrathin GaN/AlN Quantum Wells for Highly Efficient Deep Ultraviolet Emitters H Kobayashi, S Ichikawa, M Funato, Y Kawakami
Advanced Optical Materials 7 (21), 1900860, 2019
34 2019 Broad range thickness identification of hexagonal boron nitride by colors Y Anzai, M Yamamoto, S Genchi, K Watanabe, T Taniguchi, S Ichikawa, ...
Applied physics express 12 (5), 055007, 2019
25 2019 GaN: Eu, O-based resonant-cavity light emitting diodes with conductive AlInN/GaN distributed Bragg reflectors T Inaba, J Tatebayashi, K Shiomi, D Timmerman, S Ichikawa, Y Fujiwara
ACS Applied Electronic Materials 2 (3), 732-738, 2020
24 2020 AlxGa1− xN-based semipolar deep ultraviolet light-emitting diodes R Akaike, S Ichikawa, M Funato, Y Kawakami
Applied Physics Express 11 (6), 061001, 2018
24 2018 Size dependence of quantum efficiency of red emission from GaN: Eu structures for application in micro-LEDs D Denier Van Der Gon, D Timmerman, Y Matsude, S Ichikawa, M Ashida, ...
Optics Letters 45 (14), 3973-3976, 2020
23 2020 Excitation Efficiency and Limitations of the Luminescence of D Timmerman, B Mitchell, S Ichikawa, J Tatebayashi, M Ashida, ...
Physical Review Applied 13 (1), 014044, 2020
22 2020 Alx 1− x M Hayakawa, S Ichikawa, M Funato, Y Kawakami
Advanced Optical Materials 7 (2), 1801106, 2019
20 2019 Color-tunablility in GaN LEDs based on atomic emission manipulation under current injection B Mitchell, R Wei, J Takatsu, D Timmerman, T Gregorkiewicz, W Zhu, ...
ACS Photonics 6 (5), 1153-1161, 2019
19 2019 Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surface M Hayakawa, Y Hayashi, S Ichikawa, M Funato, Y Kawakami
UV and Higher Energy Photonics: From Materials to Applications 9926, 52-58, 2016
16 2016 Carrier dynamics and excitation of D Timmerman, B Mitchell, S Ichikawa, M Nagai, M Ashida, Y Fujiwara
Physical Review B 101 (24), 245306, 2020
15 2020 Room-temperature operation of near-infrared light-emitting diode based on Tm-doped GaN with ultra-stable emission wavelength S Ichikawa, N Yoshioka, J Tatebayashi, Y Fujiwara
Journal of Applied Physics 127 (11), 2020
14 2020 Enhanced Red Emission of Eu,O-Codoped S Ichikawa, Y Sasaki, T Iwaya, M Murakami, M Ashida, D Timmerman, ...
Physical Review Applied 15 (3), 034086, 2021
13 2021 Purcell-Effect-Enhanced Radiative Rate of Eu3+ Ions in D Timmerman, Y Matsude, Y Sasaki, S Ichikawa, J Tatebayashi, ...
Physical Review Applied 14 (6), 064059, 2020
12 2020 Metalorganic vapor phase epitaxy of pit-free AlN homoepitaxial films on various semipolar substrates S Ichikawa, M Funato, Y Kawakami
Journal of Crystal Growth 522, 68-77, 2019
12 2019 GaN channel waveguide with vertically polarity inversion formed by surface activated bonding for wavelength conversion N Yokoyama, R Tanabe, Y Yasuda, H Honda, S Ichikawa, Y Fujiwara, ...
Japanese Journal of Applied Physics 61 (5), 050902, 2022
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