Effect of hydrogen on defects of AlGaN/GaN HEMTs characterized by low-frequency noise YQ Chen, YC Zhang, Y Liu, XY Liao, YF En, WX Fang, Y Huang IEEE Transactions on Electron Devices 65 (4), 1321-1326, 2018 | 52 | 2018 |
Total dose ionizing radiation effects in the indium–zinc oxide thin-film transistors Y Liu, WJ Wu, YF En, L Wang, ZF Lei, XH Wang IEEE electron device letters 35 (3), 369-371, 2014 | 44 | 2014 |
Movable noncontact RF current measurement on a PCB trace H Qiu, W Fang, Y En, Y Huang, Y Liu, P Lai, Y Chen, C Shi IEEE Transactions on Instrumentation and Measurement 66 (9), 2464-2473, 2017 | 41 | 2017 |
Analysis and simulation of low-frequency noise in indium-zinc-oxide thin-film transistors Y Liu, H He, R Chen, YF En, B Li, YQ Chen IEEE Journal of the Electron Devices Society 6, 271-279, 2018 | 37 | 2018 |
An analytical model based on surface potential for a-Si: H thin-film transistors Y Liu, R Yao, B Li, WL Deng Journal of Display Technology 4 (2), 180-187, 2008 | 31 | 2008 |
Effect of self-assembled monolayers (SAMs) as surface passivation on the flexible a-InSnZnO thin-film transistors W Zhong, R Yao, Y Liu, L Lan, R Chen IEEE Transactions on Electron Devices 67 (8), 3157-3162, 2020 | 30 | 2020 |
A mobile robot visual SLAM system with enhanced semantics segmentation F Li, W Chen, W Xu, L Huang, D Li, S Cai, M Yang, X Xiong, Y Liu, W Li Ieee Access 8, 25442-25458, 2020 | 29 | 2020 |
Design of a compact wideband CP metasurface antenna L Yuan, H Yu‐Xuan, L Zhan‐Wei, C Shu‐Ting, X Xiao‐Ming, G Jing International Journal of RF and Microwave Computer‐Aided Engineering 30 (10 …, 2020 | 28 | 2020 |
A new broadband circularly polarized antenna with a single‐layer metasurface Y Liu, YX Huang, ZW Liu, ST Cai, XM Xiong, J Guo International Journal of RF and Microwave Computer‐Aided Engineering 30 (7 …, 2020 | 26 | 2020 |
Subthreshold characteristics of polysilicon TFTs W Deng, X Zheng, R Chen, Y Liu Solid-state electronics 52 (5), 695-703, 2008 | 23 | 2008 |
Novel and secure plaintext‐related image encryption algorithm based on compressive sensing and tent‐sine system S Huang, L Huang, S Cai, X Xiong, Y Liu IET Image Processing 16 (6), 1544-1557, 2022 | 22 | 2022 |
Analysis of low-frequency noise in the amorphous indium zinc oxide thin film transistors Y Liu, WJ Wu, B Li, YF En, L Wang, YR Liu | 21 | 2014 |
Scaling down effect on low frequency noise in polycrystalline silicon thin-film transistors Y Liu, ST Cai, CY Han, YY Chen, L Wang, XM Xiong, R Chen IEEE Journal of the Electron Devices Society 7, 203-209, 2019 | 20 | 2019 |
Low-frequency noise in hybrid-phase-microstructure ITO-stabilized ZnO thin-film transistors Y Liu, S Deng, R Chen, B Li, YF En, Y Chen IEEE Electron Device Letters 39 (2), 200-203, 2017 | 19 | 2017 |
Temperature-dependent low-frequency noise in indium–zinc–oxide thin-film transistors down to 10 K Y Liu, H He, YY Chen, R Chen, L Wang, S Cai, X Xiong IEEE Transactions on Electron Devices 66 (5), 2192-2197, 2019 | 18 | 2019 |
Using termination effect to characterize electric and magnetic field coupling between TEM cell and microstrip line C Shi, W Fang, C Chai, Y Huang, Y En, Y Yang, Y Liu, Y Chen, X Liao IEEE Transactions on Electromagnetic Compatibility 57 (6), 1338-1344, 2015 | 16 | 2015 |
A high speed processor for elliptic curve cryptography over NIST prime field X Hu, X Li, X Zheng, Y Liu, X Xiong IET Circuits, Devices & Systems 16 (4), 350-359, 2022 | 15 | 2022 |
Introducing effective temperature into Arrhenius equation with Meyer-Neldel rule for describing both Arrhenius and non-Arrhenius dependent drain current of amorphous InGaZnO TFTs H He, Y Liu, J Yin, X Wang, X Lin, S Zhang Solid-State Electronics 181, 108011, 2021 | 15 | 2021 |
A novel wideband circularly polarized modified square‐slot antenna with loaded strips Y Liu, ST Cai, XM Xiong, WJ Li, J Yang International Journal of RF and Microwave Computer‐Aided Engineering 29 (10 …, 2019 | 15 | 2019 |
Analysis of indium–zinc–oxide thin-film transistors under electrostatic discharge stress Y Liu, R Chen, B Li, YF En, YQ Chen IEEE Transactions on Electron Devices 65 (1), 356-360, 2017 | 15 | 2017 |