High power 2.4 μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power-conversion efficiency of 17.5% L Shterengas, G Belenky, MV Kisin, D Donetsky Applied physics letters 90 (1), 2007 | 108 | 2007 |
Semi‐polar nitride surfaces and heterostructures A Strittmatter, JE Northrup, NM Johnson, MV Kisin, P Spiberg, ... physica status solidi (b) 248 (3), 561-573, 2011 | 93 | 2011 |
Continuous-wave room temperature operated 3.0 μm type I GaSb-based lasers with quinternary AlInGaAsSb barriers T Hosoda, G Belenky, L Shterengas, G Kipshidze, MV Kisin Applied Physics Letters 92 (9), 2008 | 71 | 2008 |
Boundary-condition problem in the Kane model MV Kisin, BL Gelmont, S Luryi Physical Review B 58 (8), 4605, 1998 | 49 | 1998 |
Phonon enhanced inverse population in asymmetric double quantum wells MA Stroscio, M Kisin, G Belenky, S Luryi Applied physics letters 75 (21), 3258-3260, 1999 | 47 | 1999 |
Effect of quantum well compressive strain above 1% on differential gain and threshold current density in type-I GaSb-based diode lasers J Chen, D Donetsky, L Shterengas, MV Kisin, G Kipshidze, G Belenky IEEE Journal of Quantum Electronics 44 (12), 1204-1210, 2008 | 43 | 2008 |
Semiconductor light source with electrically tunable emission wavelength G Belenky, JD Bruno, MV Kisin, S Luryi, L Shterengas, S Suchalkin, ... US Patent 7,876,795, 2011 | 39 | 2011 |
Influence of complex phonon spectra on intersubband optical gain MV Kisin, VB Gorfinkel, MA Stroscio, G Belenky, S Luryi Journal of applied physics 82 (5), 2031-2038, 1997 | 31 | 1997 |
Widely tunable type-II interband cascade laser S Suchalkin, MV Kisin, S Luryi, G Belenky, FJ Towner, JD Bruno, ... Applied physics letters 88 (3), 2006 | 30 | 2006 |
Experimental study of the optical gain and loss in InAs/GaInSb interband cascade lasers S Suchalkin, J Bruno, R Tober, D Westerfeld, M Kisin, G Belenky Applied physics letters 83 (8), 1500-1502, 2003 | 26 | 2003 |
Gallium antimonide (GaSb)-based type-I quantum well diode lasers: recent development and prospects G Belenky, L Shterengas, MV Kisin, T Hosoda Semiconductor Lasers, 441-486, 2013 | 25 | 2013 |
High Injection Efficiency Polar and Non-Polar III-Nitrides Light Emitters MV Kisin, HS El-Ghoroury US Patent App. 13/014,002, 2011 | 25 | 2011 |
Effects of interface phonon scattering in three-interface heterostructures MV Kisin, MA Stroscio, G Belenky, VB Gorfinkel, S Luryi Journal of applied physics 83 (9), 4816-4822, 1998 | 25 | 1998 |
Non-equilibrium quantum well populations and active region inhomogeneity in polar and nonpolar III-nitride light emitters MV Kisin, CL Chuang, HS El-Ghoroury Journal of Applied Physics 111 (10), 2012 | 24 | 2012 |
Modeling of III-Nitride Multiple Quantum Well Light Emitting Structures M Kisin, H El-Ghoroury IEEE Journal of Selected Topics in Quantum Electronics 19 (5), 1901410, 2013 | 22 | 2013 |
Inhomogeneous injection in III-nitride light emitters with deep multiple quantum wells MV Kisin, HS El-Ghoroury Journal of Computational Electronics 14 (2), 432-443, 2015 | 21 | 2015 |
Optical characteristics of III-nitride quantum wells with different crystallographic orientations MV Kisin, RGW Brown, HS El-Ghoroury Journal of Applied Physics 105 (1), 2009 | 20 | 2009 |
Mechanism of the temperature sensitivity of mid-infrared GaSb-based semiconductor lasers S Suchalkin, L Shterengas, M Kisin, S Luryi, G Belenky, R Kaspi, ... Applied Physics Letters 87 (4), 2005 | 20 | 2005 |
Modeling of injection characteristics of polar and nonpolar III-nitride multiple quantum well structures MV Kisin, HS El-Ghoroury Journal of Applied Physics 107 (10), 2010 | 18 | 2010 |
Injection characteristics of polar and nonpolar multiple‐QW structures and active region ballistic overshoot MV Kisin, HS El‐Ghoroury physica status solidi c 8 (7‐8), 2264-2266, 2011 | 17 | 2011 |