Jiyoung Kim

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Robert M. WallaceUniversity of Texas at DallasDirección de correo verificada de utdallas.edu
Lanxia ChengStaff Engineer_EMD ElectronicsDirección de correo verificada de emdgroup.com
Luigi ColomboUniversity of Texas at DallasDirección de correo verificada de utdallas.edu
Si Joon KimAssociate Professor, Kangwon National UniversityDirección de correo verificada de kangwon.ac.kr
Bongki LeeTechnology Development Engineer, GLOBALFOUNDRIESDirección de correo verificada de globalfoundries.com
Stephen McDonnellUniversity of VirginiaDirección de correo verificada de virginia.edu
Jaidah MohanSenior Process Development EngineerDirección de correo verificada de micron.com
Hyunjung ShinSungkyunkwan UniversityDirección de correo verificada de skku.edu
Harrison Sejoon KimIntel ATTDDirección de correo verificada de intel.com
Greg MordiThe University of Texas at DallasDirección de correo verificada de utdallas.edu
Barry BrennanAtlantic Technological UniversityDirección de correo verificada de atu.ie
Rafik AddouOregon State UniversityDirección de correo verificada de oregonstate.edu
Hong DongNankai UniversityDirección de correo verificada de nankai.edu.cn
Eric M VogelHightower Professor of Materials Science and Engineering, Georgia Institute of TechnologyDirección de correo verificada de mse.gatech.edu
Jinho AhnProfessor of Materials Science and Engineering, Hanyang UniversityDirección de correo verificada de hanyang.ac.kr
Myung Mo SungHanyang University, Chemistry DepartmentDirección de correo verificada de HANYANG.AC.KR
Yves Jean ChabalUniversity of Texas at DallasDirección de correo verificada de utdallas.edu
Srikar JandhyalaEngineering Manager, Intel CorporationDirección de correo verificada de intel.com
Chadwin D. YoungUniversity of Texas at DallasDirección de correo verificada de utdallas.edu
Jie HuangTexas InstrumentsDirección de correo verificada de ti.com

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Jiyoung Kim

Professor, Department of Materials Science and Engineering, University of Texas at Dallas

Dirección de correo verificada de utdallas.edu - Página principal

Advanced CMOS Atomic Layer Deposition Gate Stack ferroelectrics 2D-Nanomaterials and Heterostructures


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 92 (7), 2008	494	2008
Covalent Nitrogen Doping and Compressive Strain in MoS₂ by Remote N₂ Plasma Exposure A Azcatl, X Qin, A Prakash, C Zhang, L Cheng, Q Wang, N Lu, MJ Kim, ... Nano letters 16 (9), 5437-5443, 2016	428	2016
Template-directed synthesis of oxide nanotubes: fabrication, characterization, and applications C Bae, H Yoo, S Kim, K Lee, J Kim, MM Sung, H Shin Chemistry of Materials 20 (3), 756-767, 2008	373	2008
Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics B Lee, SY Park, HC Kim, KJ Cho, EM Vogel, MJ Kim, RM Wallace, J Kim Applied Physics Letters 92 (20), 2008	365	2008
Metal Contacts on Physical Vapor Deposited Monolayer MoS₂ C Gong, C Huang, J Miller, L Cheng, Y Hao, D Cobden, J Kim, RS Ruoff, ... ACS nano 7 (12), 11350-11357, 2013	359	2013
Formation of TiO₂ and ZrO₂ Nanotubes Using Atomic Layer Deposition with Ultraprecise Control of the Wall Thickness H Shin, DK Jeong, J Lee, MM Sung, J Kim Advanced Materials 16 (14), 1197-1200, 2004	342	2004
HfO₂ on MoS₂ by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ... ACS nano 7 (11), 10354-10361, 2013	331	2013
Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ... Applied Physics Letters 111 (24), 2017	328	2017
Ferroelectric thin Hf0.5Zr05O2 films: a review of recent advance SJ Kim, J Mohan, SR Summerfelt, J Kim JOM 71 (1), 246, 2019	324*	2019
Large-Area Deposition of MoS2 by pulsed laser deposition with in situ thickness control MI Serna, SH Yoo, S Moreno, Y Xi, JP Oviedo, H Choi, HN Alshareef, ... ACS Nano 10 (6), 6054-6061, 2016	262	2016
HfSe₂ Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ... ACS nano 9 (1), 474-480, 2015	259	2015
MoS2 functionalization for ultra-thin atomic layer deposited dielectrics A Azcatl, S McDonnell, S KC, X Peng, H Dong, X Qin, R Addou, GI Mordi, ... Applied Physics Letters 104 (11), 2014	239	2014
Ozone adsorption on graphene: ab initio study and experimental validation G Lee, B Lee, J Kim, K Cho The Journal of Physical Chemistry C 113 (32), 14225-14229, 2009	225	2009
Remote Plasma Oxidation and Atomic Layer Etching of MoS₂ H Zhu, X Qin, L Cheng, A Azcatl, J Kim, RM Wallace ACS Applied Materials & Interfaces 8 (29), 19119-19126, 2016	192	2016
Half-cycle atomic layer deposition reaction studies of on (100) surfaces M Milojevic, FS Aguirre-Tostado, CL Hinkle, HC Kim, EM Vogel, J Kim, ... Applied Physics Letters 93 (20), 202902, 2008	192	2008
Schottky barrier height engineering for electrical contacts of multilayered MoS2 transistors with reduction of metal induced gate states GS Kim, SH Kim, J Park, K Han, J Kim, HY Yu ACS Nano 12 (6), 6292, 2018	186	2018
Comparison of the sputter rates of oxide films relative to the sputter rate of DR Baer, MH Engelhard, AS Lea, P Nachimuthu, TC Droubay, J Kim, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 28 (5 …, 2010	164	2010
Defects and Surface Structural Stability of MoTe₂ Under Vacuum Annealing H Zhu, Q Wang, L Cheng, R Addou, J Kim, MJ Kim, RM Wallace Acs Nano 11 (11), 11005-11014, 2017	161	2017
Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ... ACS nano 6 (3), 2722-2730, 2012	161	2012
Effect of film thickness on the ferroelectric and dielectric properties of low temperature (400C) Hf0.5Zr0.5O2 films SJ Kim, J Mohan, J Lee, JS Lee, AT Lucero, L Colombo, SR Summerfelt, ... applied physics letters 112 (17), 172902, 2018	154	2018

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