Leon Shterengas

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Dmitry DonetskyStony Brook University, NYDirección de correo verificada de stonybrook.edu
Wendy SarneyDEVCOM Army Research LaboratoryDirección de correo verificada de army.mil
Ding WangCoherent CorpDirección de correo verificada de coherent.com
Rui Liang, PhDAppleDirección de correo verificada de apple.com
Aaron SteinStaff Scientist, Brookhaven National LaboratoryDirección de correo verificada de bnl.gov
Mikhail V. KisinResearch Scientist, Ostendo Technoligies Inc.Dirección de correo verificada de ostendo.com
jianfeng chenCrystal IS, Inc.Dirección de correo verificada de crystal-IS.com
Dmitry FirsovPeter the Great St. Petersburg Polytechnic University (SPbPU)Dirección de correo verificada de rphf.spbstu.ru
Serge LuryiDistinguished Professor of Electrical Engineering, Stony Brook UniversityDirección de correo verificada de stonybrook.edu
Mark S HybertsenSenior Physicist, Emeritus, Center for Functional Nanomaterials, Brookhaven National LaboratoryDirección de correo verificada de bnl.gov
Ming LuStaff Scientist, Brookhaven National LaboratoryDirección de correo verificada de bnl.gov
Seungyong JungTransWave Photonics, LLCDirección de correo verificada de transwavephotonics.com
Nelson TansuHead of School & Professor, School of Electrical & Mechanical Engineering [EEE, ME, & BME]Dirección de correo verificada de adelaide.edu.au
Gleb ShtengelSenior Scientist at Howard Hughes Medial InstituteDirección de correo verificada de janelia.hhmi.org
Tao FengProfessor of Herbert Gleiter Institute of Nanoscience, Nanjing University of Science and TechnologyDirección de correo verificada de njust.edu.cn
Mathieu FradetJet Propulsion LaboratoryDirección de correo verificada de jpl.nasa.gov
Stuart JacksonSchool of Engineering, Macquarie UniversityDirección de correo verificada de mq.edu.au
Patrick McCannUniversity of OklahomaDirección de correo verificada de ou.edu
Yuchun LinUniversity of California, BerkeleyDirección de correo verificada de berkeley.edu

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Leon Shterengas

Stony Brook University

Dirección de correo verificada de stonybrook.edu

Photonics


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves JG Kim, L Shterengas, RU Martinelli, GL Belenky, DZ Garbuzov, WK Chan Applied Physics Letters 81 (17), 3146-3148, 2002	153	2002
Continuous wave operation of diode lasers at 3.36 μm at 12 C L Shterengas, G Belenky, T Hosoda, G Kipshidze, S Suchalkin Applied Physics Letters 93 (1), 2008	141	2008
Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with λ> 2.5 µm L Shterengas, GL Belenky, JG Kim, RU Martinelli Semiconductor science and technology 19 (5), 655, 2004	126	2004
Type-I diode lasers for spectral region above 3 μm G Belenky, L Shterengas, G Kipshidze, T Hosoda IEEE Journal of Selected Topics in Quantum Electronics 17 (5), 1426-1434, 2011	123	2011
High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In (Al) GaAsSb/GaSb diode lasers JG Kim, L Shterengas, RU Martinelli, GL Belenky Applied Physics Letters 83 (10), 1926-1928, 2003	114	2003
Band gap of InAsSb with native lattice constant SP Svensson, WL Sarney, H Hier, Y Lin, D Wang, D Donetsky, ... Physical Review B—Condensed Matter and Materials Physics 86 (24), 245205, 2012	108	2012
High power 2.4 μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power-conversion efficiency of 17.5% L Shterengas, G Belenky, MV Kisin, D Donetsky Applied physics letters 90 (1), 2007	108	2007
Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials I Vurgaftman, G Belenky, Y Lin, D Donetsky, L Shterengas, G Kipshidze, ... Applied Physics Letters 108 (22), 2016	97	2016
Properties of unrelaxed InAs1− XSbX alloys grown on compositionally graded buffers G Belenky, D Donetsky, G Kipshidze, D Wang, L Shterengas, WL Sarney, ... Applied physics letters 99 (14), 2011	85	2011
Diode lasers emitting near 3.44 [mu] m in continuous-wave regime at 300K T Hosoda, G Kipshidze, L Shterengas, G Belenky Electronics letters 46 (21), 1, 2010	85	2010
Continuous-wave room temperature operated 3.0 μm type I GaSb-based lasers with quinternary AlInGaAsSb barriers T Hosoda, G Belenky, L Shterengas, G Kipshidze, MV Kisin Applied Physics Letters 92 (9), 2008	71	2008
Type-I GaSb-Based Laser Diodes Operating in 3.1- to 3.3-m Wavelength Range T Hosoda, G Kipshidze, G Tsvid, L Shterengas, G Belenky IEEE Photonics Technology Letters 22 (10), 718-720, 2010	68	2010
Room temperature operated 3.1 μm type-I GaSb-based diode lasers with 80mW continuous-wave output power L Shterengas, G Belenky, G Kipshidze, T Hosoda Applied Physics Letters 92 (17), 2008	63	2008
Type-I quantum well cascade diode lasers emitting near 3 μm L Shterengas, R Liang, G Kipshidze, T Hosoda, S Suchalkin, G Belenky Applied Physics Letters 103 (12), 2013	56	2013
Nitrogen incorporation effects on gain properties of GaInNAs lasers: Experiment and theory A Thränhardt, I Kuznetsova, C Schlichenmaier, SW Koch, L Shterengas, ... Applied Physics Letters 86 (20), 2005	56	2005
Cascade pumping of 1.9–3.3 μm type-i quantum well GaSb-based diode lasers L Shterengas, G Kipshidze, T Hosoda, R Liang, T Feng, M Wang, A Stein, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-8, 2017	55	2017
Cascade type-I quantum well diode lasers emitting 960 mW near 3 μm L Shterengas, R Liang, G Kipshidze, T Hosoda, G Belenky, SS Bowman, ... Applied Physics Letters 105 (16), 2014	55	2014
High-power 2.3-μm GaSb-based linear laser array L Shterengas, GL Belenky, A Gourevitch, D Donetsky, JG Kim, ... IEEE Photonics Technology Letters 16 (10), 2218-2220, 2004	53	2004
Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region D Wang, D Donetsky, G Kipshidze, Y Lin, L Shterengas, G Belenky, ... Applied Physics Letters 103 (5), 2013	51	2013
High-Power 2.2-m Diode Lasers With Heavily Strained Active Region R Liang, J Chen, G Kipshidze, D Westerfeld, L Shterengas, G Belenky IEEE Photonics Technology Letters 23 (10), 603-605, 2011	47	2011

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