Tibor Grasser

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Ben KaczerimecDirección de correo verificada de imec.be
Michael WaltlFull Professor at TU Wien, Vienna, AustriaDirección de correo verificada de iue.tuwien.ac.at
Siegfried SelberherrInstitute for Microelectronics, TU WienDirección de correo verificada de TUWien.ac.at
Jacopo FrancoimecDirección de correo verificada de imec.be
Hans ReisingerInfineon AGDirección de correo verificada de infineon.com
Theresia KnoblochResearcher, TU WienDirección de correo verificada de iue.tuwien.ac.at
Yury Illarionov (Юрий Юрьевич Илла...Southern University of Science and Technology (SUSTech)Dirección de correo verificada de sustech.edu.cn
Guido Groesenekenimec and KU LeuvenDirección de correo verificada de imec.be
Gerhard RzepaGlobal TCAD SolutionsDirección de correo verificada de globaltcad.com
Gregor PobegenSenior staff engineer, KAI GmbH, AustriaDirección de correo verificada de k-ai.at
Michael NelhiebelKAI GmbH / Infineon Technologies Austria AGDirección de correo verificada de infineon.com
Dominic WaldhörPostdoctoral Researcher, Institute for Microelectronics, TU WienDirección de correo verificada de iue.tuwien.ac.at
Franz SchanovskyGlobal TCAD Solutions GmbHDirección de correo verificada de chello.at
Al-Moatasem El-SayedNanolayers Research Computing Ltd. & Technical University of ViennaDirección de correo verificada de ucl.ac.uk
Alexander Grillprinciple researcher, imecDirección de correo verificada de imec.be
Dimitri LintenImecDirección de correo verificada de imec.be
Bernhard StampferInstitute for Microelectronics, TU WienDirección de correo verificada de iue.tuwien.ac.at
Karl RuppTU WienDirección de correo verificada de karlrupp.net
Dr. Hajdin CericInstitut für Mikroelektronik, TU WienDirección de correo verificada de iue.tuwien.ac.at
Thomas MuellerVienna University of TechnologyDirección de correo verificada de tuwien.ac.at

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Tibor Grasser

Professor at TU Wien, Head of Institute for Microelectronics, Fellow IEEE

Dirección de correo verificada de iue.tuwien.ac.at - Página principal

Semiconductors Micro- and Nanoelectronics Reliability Defects 2D Materials


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Transistors based on two-dimensional materials for future integrated circuits S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ... Nature Electronics 4 (11), 786-799, 2021	649	2021
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities T Grasser Microelectronics Reliability 52 (1), 39-70, 2012	600	2012
The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ... IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011	541	2011
Insulators for 2D nanoelectronics: the gap to bridge YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ... Nature communications 11 (1), 3385, 2020	428	2020
Origin of NBTI variability in deeply scaled pFETs B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ... 2010 IEEE International Reliability Physics Symposium, 26-32, 2010	383	2010
A review of hydrodynamic and energy-transport models for semiconductor device simulation T Grasser, TW Tang, H Kosina, S Selberherr Proceedings of the IEEE 91 (2), 251-274, 2003	375	2003
The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability T Grasser, H Reisinger, PJ Wagner, F Schanovsky, W Gös, B Kaczer 2010 IEEE international reliability physics symposium, 16-25, 2010	358	2010
Ubiquitous relaxation in BTI stressing—New evaluation and insights B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ... 2008 IEEE International Reliability Physics Symposium, 20-27, 2008	311	2008
A two-stage model for negative bias temperature instability T Grasser, B Kaczer, W Goes, T Aichinger, P Hehenberger, M Nelhiebel 2009 IEEE international reliability physics symposium, 33-44, 2009	300	2009
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ... Nature Electronics 4 (2), 98-108, 2021	287	2021
The statistical analysis of individual defects constituting NBTI and its implications for modeling DC-and AC-stress H Reisinger, T Grasser, W Gustin, C Schlünder 2010 IEEE International Reliability Physics Symposium, 7-15, 2010	270	2010
Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ... Nature Electronics 2 (6), 230-235, 2019	252	2019
The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ... 2D Materials 3 (3), 035004, 2016	241	2016
Analytic modeling of the bias temperature instability using capture/emission time maps T Grasser, PJ Wagner, H Reisinger, T Aichinger, G Pobegen, M Nelhiebel, ... 2011 International Electron Devices Meeting, 27.4. 1-27.4. 4, 2011	220	2011
The universality of NBTI relaxation and its implications for modeling and characterization T Grasser, W Gos, V Sverdlov, B Kaczer 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007	208	2007
Long-term stability and reliability of black phosphorus field-effect transistors YY Illarionov, M Waltl, G Rzepa, JS Kim, S Kim, A Dodabalapur, ... ACS nano 10 (10), 9543-9549, 2016	196	2016
Comphy—A compact-physics framework for unified modeling of BTI G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ... Microelectronics Reliability 85, 49-65, 2018	192	2018
Bias temperature instability for devices and circuits T Grasser Springer Science & Business Media, 2013	185	2013
Review on SiC MOSFETs high-voltage device reliability focusing on threshold voltage instability K Puschkarsky, T Grasser, T Aichinger, W Gustin, H Reisinger IEEE Transactions on Electron Devices 66 (11), 4604-4616, 2019	184	2019
Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors T Grasser, H Reisinger, PJ Wagner, B Kaczer Physical Review B—Condensed Matter and Materials Physics 82 (24), 245318, 2010	181	2010

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