| Effect of annealing temperature on optical band-gap of amorphous indium zinc oxide film JW Jeon, DW Jeon, T Sahoo, M Kim, JH Baek, JL Hoffman, NS Kim, ... Journal of Alloys and Compounds 509 (41), 10062-10065, 2011 | 94 | 2011 |
| Investigation of Optical and Structural Stability of Localized Surface Plasmon Mediated Light‐Emitting Diodes by Ag and Ag/SiO2 Nanoparticles LW Jang, DW Jeon, M Kim, JW Jeon, AY Polyakov, JW Ju, SJ Lee, ... Advanced Functional Materials 22 (13), 2728-2734, 2012 | 76 | 2012 |
| Optimization of the growth temperature of α-Ga2O3 epilayers grown by halide vapor phase epitaxy H Son, DW Jeon Journal of Alloys and Compounds 773, 631-635, 2019 | 59 | 2019 |
| Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes DW Jeon, WM Choi, HJ Shin, SM Yoon, JY Choi, LW Jang, IH Lee Journal of Materials Chemistry 21 (44), 17688-17692, 2011 | 44 | 2011 |
| Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO2 nanoparticles LW Jang, DW Jeon, T Sahoo, DS Jo, JW Ju, S Lee, JH Baek, JK Yang, ... Optics Express 20 (3), 2116-2123, 2012 | 42 | 2012 |
| Electrical properties, structural properties, and deep trap spectra of thin α-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates DW Jeon, H Son, J Hwang, AY Polyakov, NB Smirnov, IV Shchemerov, ... APL Materials 6 (12), 2018 | 40 | 2018 |
| Efficient nonradiative energy transfer from InGaN/GaN nanopillars to CdSe/ZnS core/shell nanocrystals S Nizamoglu, B Guzelturk, DW Jeon, IH Lee, HV Demir Applied Physics Letters 98 (16), 2011 | 39 | 2011 |
| High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga2O3 J Bae, DW Jeon, JH Park, J Kim Journal of Vacuum Science & Technology A 39 (3), 2021 | 36 | 2021 |
| Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and … LW Jang, DW Jeon, AY Polyakov, AV Govorkov, VN Sokolov, NB Smirnov, ... Journal of alloys and compounds 589, 507-512, 2014 | 32 | 2014 |
| Energy coupling processes in InGaN/GaN nanopillar light emitting diodes embedded with Ag and Ag/SiO 2 nanoparticles LW Jang, DW Jeon, T Sahoo, AY Polyakov, B Saravanakumar, YT Yu, ... Journal of Materials Chemistry 22 (40), 21749-21753, 2012 | 30 | 2012 |
| Self-powered solar-blind α-Ga2O3 thin-film UV-C photodiode grown by halide vapor-phase epitaxy J Bae, JH Park, DW Jeon, J Kim APL Materials 9 (10), 2021 | 27 | 2021 |
| Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer LW Jang, JW Ju, DW Jeon, JW Park, AY Polyakov, S Lee, JH Baek, ... Optics express 20 (6), 6036-6041, 2012 | 26 | 2012 |
| Facile fabrication of free-standing light emitting diode by combination of wet chemical etchings LW Jang, DW Jeon, TH Chung, AY Polyakov, HS Cho, JH Yun, JW Ju, ... ACS applied materials & interfaces 6 (2), 985-989, 2014 | 23 | 2014 |
| Effects of nanoepitaxial lateral overgrowth on growth of α-Ga2O3 by halide vapor phase epitaxy AN Cha, S Bang, H Rho, H Bae, DW Jeon, JW Ju, SK Hong, JS Ha Applied Physics Letters 115 (9), 2019 | 22 | 2019 |
| Crystal Quality Improvement of α-Ga2O3 Growth on Stripe Patterned Template via Epitaxial Lateral Overgrowth H Son, Y Choi, JS Ha, SH Jung, DW Jeon Crystal Growth & Design 19 (9), 5105-5110, 2019 | 22 | 2019 |
| Free-standing GaN layer by combination of electrochemical and photo-electrochemical etching LW Jang, DW Jeon, AY Polyakov, HS Cho, JH Yun, DS Jo, JW Ju, ... Applied Physics Express 6 (6), 061001, 2013 | 22 | 2013 |
| Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching AY Polyakov, DW Jeon, NB Smirnov, AV Govorkov, EA Kozhukhova, ... Journal of Applied Physics 112 (7), 2012 | 19 | 2012 |
| Alpha-phase gallium oxide-based UVC photodetector with high sensitivity and visible blindness S Kim, Y Yoon, D Seo, JH Park, DW Jeon, WS Hwang, M Shin APL Materials 11 (6), 2023 | 18 | 2023 |
| Heteroepitaxial α-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy YJ Jeong, JH Park, MJ Yeom, I Kang, JY Yang, HY Kim, DW Jeon, G Yoo Applied Physics Express 15 (7), 074001, 2022 | 18 | 2022 |
| Influence of post-annealing on properties of α-Ga2O3 epilayer grown by halide vapor phase epitaxy H Son, YJ Choi, J Hwang, DW Jeon ECS Journal of Solid State Science and Technology 8 (7), Q3024, 2019 | 18 | 2019 |
