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Luis Gaggero
Luis Gaggero
Director, Facultad de Ciencias, UAEM
Dirección de correo verificada de uaem.mx
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Citado por
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Año
A simple model for delta‐doped field‐effect transistor electronic states
LM Gaggero‐Sager, R Pérez‐Alvarez
Journal of applied physics 78 (7), 4566-4569, 1995
681995
Thomas-Fermi approximation in p-type δ-doped quantum wells of GaAs and Si
LM Gaggero-Sager, ME Mora-Ramos, DA Contreras-Solorio
Physical Review B 57 (11), 6286, 1998
531998
Design of graphene electronic devices using nanoribbons of different widths
GG Naumis, M Terrones, H Terrones, LM Gaggero-Sager
Applied Physics Letters 95 (18), 2009
502009
Thomas–Fermi–Dirac theory of the hole gas of a double p-type δ-doped GaAs quantum wells
I Rodriguez-Vargas, LM Gaggero-Sager, VR Velasco
Surface science 537 (1-3), 75-83, 2003
452003
The hydrostatic pressure effects on intersubband optical absorption of n-type δ-doped quantum well in GaAs
O Oubram, O Navarro, LM Gaggero-Sager, JC Martínez-Orozco, ...
Solid state sciences 14 (4), 440-444, 2012
372012
The spectrum of quasiregular heterostructures
R Pérez-Alvarez, F Garcıa-Moliner
Some Contemporary Problems of Condensed Matter Physics, 1-37, 2001
34*2001
Self-similar conductance patterns in graphene Cantor-like structures
H García-Cervantes, LM Gaggero-Sager, DS Díaz-Guerrero, ...
Scientific Reports 7 (1), 617, 2017
322017
Effect of the hydrostatic pressure on two-dimensional transport in delta-doped systems
O Oubram, ME Mora-Ramos, LM Gaggero-Sager
The European Physical Journal B 71, 233-236, 2009
322009
Electrical properties of Nb-doped PZT 65/35 ceramics: Influence of Nb and excess PbO
JC M’Peko, AG Peixoto, E Jiménez, LM Gaggero-Sager
Journal of electroceramics 15, 167-176, 2005
322005
Subband and transport calculations in double n-type δ-doped quantum wells in Si
I Rodriguez-Vargas, LM Gaggero-Sager
Journal of applied physics 99 (3), 2006
302006
Thomas-Fermi approximation in a tight-binding calculation of δ-doped quantum wells in GaAs
S Vlaev, LM Gaggero-Sager
Physical Review B 58 (3), 1142, 1998
271998
Study of the electronic properties of GaAs‐based atomic layer doped field effect transistor (ALD‐FET) under the influence of hydrostatic pressure
JC Martínez‐Orozco, I Rodríguez‐Vargas, CA Duque, ME Mora‐Ramos, ...
physica status solidi (b) 246 (3), 581-585, 2009
252009
White metal-like omnidirectional mirror from porous silicon dielectric multilayers
AD Ariza-Flores, LM Gaggero-Sager, V Agarwal
Applied Physics Letters 101 (3), 2012
232012
Exchange Energy of a Hole Gas and the Thomas‐Fermi‐Dirac Approximation in p‐Type δ‐Doped Quantum Wells in Si and GaAs
LM Gaggero‐Sager
physica status solidi (b) 231 (1), 243-255, 2002
222002
Exchange and correlation via functional of Thomas-Fermi in delta-doped quantum wells
LM Gaggero-Sager
Modelling and Simulation in Materials Science and Engineering 9 (1), 1, 2001
222001
Electronic structure of delta-doped quantum well as a function of temperature
LM Gaggero-Sager, R Pérez-Alvarez
Applied physics letters 70 (2), 212-213, 1997
221997
Self-consistent calculation of transport properties in Si δ-doped GaAs quantum wells as a function of the temperature
LM Gaggero-Sager, GG Naumis, MA Muñoz-Hernandez, V Montiel-Palma
Physica B: Condensed Matter 405 (20), 4267-4270, 2010
212010
Self-similar charge transmission in gapped graphene
DS Díaz-Guerrero, I Rodríguez-Vargas, GG Naumis, LM Gaggero-Sager
Fractals 24 (02), 1630002, 2016
182016
Self-similar transmission properties of aperiodic Cantor potentials in gapped graphene
R Rodríguez-González, I Rodríguez-Vargas, DS Díaz-Guerrero, ...
The European Physical Journal B 89, 1-11, 2016
182016
Transport and electronic properties of two dimensional electron gas in delta-migfet in GaAs
O Oubram, LM Gaggero-Sager, A Bassam, GAL Acosta
Progress In Electromagnetics Research 110, 59-80, 2010
182010
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20