| InGaAs tri-gate MOSFETs with record on-current CB Zota, F Lindelow, LE Wernersson, E Lind 2016 IEEE International Electron Devices Meeting (IEDM), 3.2. 1-3.2. 4, 2016 | 41 | 2016 |
| High‐frequency InGaAs tri‐gate MOSFETs with fmax of 400 GHz CB Zota, F Lindelöw, LE Wernersson, E Lind Electronics Letters 52 (22), 1869-1871, 2016 | 31 | 2016 |
| Doping evaluation of InP nanowires for tandem junction solar cells F Lindelöw, M Heurlin, G Otnes, V Dagytė, D Lindgren, O Hultin, K Storm, ... Nanotechnology 27 (6), 065706, 2016 | 23 | 2016 |
| InGaAs nanowire MOSFETs with ION= 555 μA/μm at IOFF= 100 nA/μm and VDD= 0.5 V CB Zota, F Lindelöw, LE Wernersson, E Lind 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016, 7573418, 2016 | 18 | 2016 |
| Low-temperature back-end-of-line technology compatible with III-V nanowire MOSFETs S Andric, L Ohlsson Fhager, F Lindelöw, OP Kilpi, LE Wernersson Journal of Vacuum Science & Technology B 37 (6), 2019 | 11 | 2019 |
| III–V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications F Lindelöw, NS Garigapati, L Södergren, M Borg, E Lind Semiconductor Science and Technology 35 (6), 065015, 2020 | 10 | 2020 |
| Lateral III–V nanowire MOSFETs in low-noise amplifier stages S Andrić, F Lindelöw, LO Fhager, E Lind, LE Wernersson IEEE Transactions on Microwave Theory and Techniques 70 (2), 1284-1291, 2021 | 7 | 2021 |
| Gated Hall effect measurements on selectively grown InGaAs nanowires F Lindelöw, CB Zota, E Lind Nanotechnology 28 (20), 205204, 2017 | 7 | 2017 |
| InP nanowire p-type doping via Zinc indiffusion T Haggren, G Otnes, R Mourao, V Dagyte, O Hultin, F Lindelöw, ... Journal of Crystal Growth 451, 18-26, 2016 | 7 | 2016 |
| Low temperature scanning tunneling microscopy and spectroscopy on laterally grown InxGa1− xAs nanowire devices YP Liu, L Södergren, SF Mousavi, Y Liu, F Lindelöw, E Lind, R Timm, ... Applied Physics Letters 117 (16), 2020 | 5 | 2020 |
| Capacitance Scaling in In0.71Ga0.29As/InP MOSFETs With Self-Aligned a:Si Spacers NS Garigapati, F Lindelöw, L Södergren, E Lind IEEE Transactions on Electron Devices 68 (8), 3762-3767, 2021 | 3 | 2021 |
| InGaAs nanowire MOSFETs with ION= 555 µA/µm at IOFF= 100 nA/µm and VDD= 0.5 V CB Zota, F Lindelöw, LE Wernersson, E Lind 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 3 | 2016 |
| First InGaAs lateral nanowire MOSFET RF noise measurements and model L Ohlsson, F Lindelöw, CB Zota, M Ohlrogge, T Merkle, LE Wernersson, ... 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 1 | 2017 |
| InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v CB Zota, F Lindelöw, LE Wernersson, E Lind 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016, 2016 | 1 | 2016 |
| III-V Nanowires for High-Speed Electronics F Lindelöw | | 2020 |
