| Organometallic vapor-phase epitaxy: theory and practice GB Stringfellow Elsevier, 1999 | 2476 | 1999 |
| Solid phase immiscibility in GaInN I Ho, GB Stringfellow Applied Physics Letters 69 (18), 2701-2703, 1996 | 1352 | 1996 |
| Calculation of ternary and quaternary III–V phase diagrams GB Stringfellow Journal of Crystal Growth 27, 21-34, 1974 | 569 | 1974 |
| Miscibility gaps in quaternary III/V alloys GB Stringfellow Journal of Crystal Growth 58 (1), 194-202, 1982 | 442 | 1982 |
| Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy ZM Fang, KY Ma, DH Jaw, RM Cohen, GB Stringfellow Journal of Applied Physics 67 (11), 7034-7039, 1990 | 441 | 1990 |
| The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals GB Stringfellow Journal of Applied Physics 43 (8), 3455-3460, 1972 | 375 | 1972 |
| Materials issues in high-brightness light-emitting diodes GB Stringfellow Semiconductors and semimetals 48, 1-45, 1997 | 355 | 1997 |
| Effect of mismatch strain on band gap in III‐V semiconductors CP Kuo, SK Vong, RM Cohen, GB Stringfellow Journal of Applied Physics 57 (12), 5428-5432, 1985 | 347 | 1985 |
| Ordered structures in GaAs0. 5Sb0. 5 alloys grown by organometallic vapor phase epitaxy HR Jen, MJ Cherng, GB Stringfellow Applied physics letters 48 (23), 1603-1605, 1986 | 272 | 1986 |
| Calculation of ternary phase diagrams of III–V systems GB Stringfellow Journal of Physics and Chemistry of Solids 33 (3), 665-677, 1972 | 238 | 1972 |
| A critical appraisal of growth mechanisms in MOVPE GB Stringfellow Journal of Crystal Growth 68 (1), 111-122, 1984 | 236 | 1984 |
| Microstructures produced during the epitaxial growth of InGaN alloys GB Stringfellow Journal of Crystal Growth 312 (6), 735-749, 2010 | 230 | 2010 |
| Electronic processes in the photo-crystallization of vitreous selenium J Dresner, GB Stringfellow Journal of Physics and Chemistry of Solids 29 (2), 303-311, 1968 | 230 | 1968 |
| Progress in solid state chemistry H Reiss, GM Rosenblatt, WL Worrell, JO McCaldin, G Somorjai (No Title), 1971 | 221 | 1971 |
| Fundamental issues in heteroepitaxy—A department of energy, council on materials science panel report EG Bauer, BW Dodson, DJ Ehrlich, LC Feldman, CP Flynn, MW Geis, ... Journal of Materials Research 5 (4), 852-894, 1990 | 216 | 1990 |
| Photoelectronic properties of ZnSe crystals GB Stringfellow, RH Bube Physical Review 171 (3), 903, 1968 | 210 | 1968 |
| Spinodal decomposition and clustering in III/V alloys GB Stringfellow Journal of Electronic Materials 11 (5), 903-918, 1982 | 202 | 1982 |
| Calculation of iii–v ternary phase diagrams: In-Ga-As and In-As-Sb GB Stringfellow, PE Greene Journal of Physics and Chemistry of Solids 30 (7), 1779-1791, 1969 | 187 | 1969 |
| Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs CA Larsen, NI Buchan, GB Stringfellow Applied physics letters 52 (6), 480-482, 1988 | 183 | 1988 |
| Solubility of nitrogen in binary III–V systems I Ho, GB Stringfellow Journal of Crystal Growth 178 (1-2), 1-7, 1997 | 180 | 1997 |