| Status and Prospects of ZnO-Based Resistive Switching Memory Devices FM Simanjuntak, D Panda, W Kung-Hwa, T Tseung-Yuen Nanoscale Research Letters 11 (1), 368, 2016 | 261 | 2016 |
| Improving linearity by introducing Al in HfO2 as a memristor synapse device S Chandrasekaran, FM Simanjuntak, R Saminathan, D Panda, TY Tseng Nanotechnology 30 (44), 445205, 2019 | 122 | 2019 |
| Impacts of Co doping on ZnO transparent switching memory device characteristics FM Simanjuntak, OK Prasad, D Panda, CA Lin, TL Tsai, KH Wei, ... Applied Physics Letters 108 (18), 183506, 2016 | 85 | 2016 |
| Low-power electronic technologies for harsh radiation environments J Prinzie, FM Simanjuntak*, P Leroux, T Prodromakis Nature Electronics, 1-11, 2021 | 77 | 2021 |
| Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode FM Simanjuntak, D Panda, TL Tsai, CA Lin, KH Wei, TY Tseng Journal of materials science 50, 6961-6969, 2015 | 75 | 2015 |
| Enhanced synaptic linearity in ZnO-based invisible memristive synapse by introducing double pulsing scheme S Chandrasekaran, FM Simanjuntak, D Panda, TY Tseng IEEE Transactions on Electron Devices 66 (11), 4722-4726, 2019 | 66 | 2019 |
| Enhanced switching uniformity in AZO/ZnO1− x/ITO transparent resistive memory devices by bipolar double forming FM Simanjuntak, D Panda, TL Tsai, CA Lin, KH Wei, TY Tseng Applied Physics Letters 107 (3), 2015 | 62 | 2015 |
| Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications A Saleem, FM Simanjuntak, S Chandrasekaran, S Rajasekaran, ... Applied Physics Letters 118 (11), 2021 | 51 | 2021 |
| ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices FM Simanjuntak, S Chandrasekaran, CC Lin, TY Tseng APL Materials 7 (5), 2019 | 50 | 2019 |
| Synthesis of Fe3O4/Ag nanohybrid ferrofluids and their applications as antimicrobial and antifibrotic agents A Taufiq, RE Saputro, H Susanto, N Hidayat, S Sunaryono, T Amrillah, ... Heliyon 6 (12), 2020 | 48 | 2020 |
| Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications F Simanjuntak, T Ohno, S Chandrasekaran, TY Tseng, S Samukawa Nanotechnology, 2020 | 44 | 2020 |
| Fast, Highly Flexible, and Transparent TaOx-Based Environmentally Robust Memristors for Wearable and Aerospace Applications S Rajasekaran, FM Simanjuntak, D Panda, S Chandrasekaran, R Aluguri, ... ACS Applied Electronic Materials 2 (10), 3131-3140, 2020 | 43 | 2020 |
| Role of precursors mixing sequence on the properties of CoMn2O4 cathode materials and their application in pseudocapacitor B Pattanayak, FM Simanjuntak, D Panda, CC Yang, A Kumar, PA Le, ... Scientific reports 9 (1), 16852, 2019 | 41 | 2019 |
| Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory P Singh, FM Simanjuntak, A Kumar, TY Tseng Thin Solid Films 660, 828-833, 2018 | 40 | 2018 |
| Temperature induced complementary switching in titanium oxide resistive random access memory TYT Debashis Panda, Firman Mangasa Simanjuntak AIP Advances 6 (7), 075314, 2016 | 40 | 2016 |
| Corrosion inhibition of honeycomb waste extracts for 304 stainless steel in sulfuric acid solution F Gapsari, KA Madurani, FM Simanjuntak, A Andoko, H Wijaya, ... Materials 12 (13), 2120, 2019 | 39 | 2019 |
| Film-nanostructure-controlled inerasable-to-erasable switching transition in ZnO-based transparent memristor devices: sputtering-pressure dependency FM Simanjuntak*, T Ohno, S Samukawa ACS Applied Electronic Materials 1 (11), 2184-2189, 2019 | 37 | 2019 |
| Neutral oxygen beam treated ZnO-based resistive switching memory device FM Simanjuntak*, T Ohno, S Samukawa ACS Applied Electronic Materials 1 (1), 18-24, 2018 | 37 | 2018 |
| Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell FM Simanjuntak, S Chandrasekaran, B Pattanayak, CC Lin, TY Tseng Nanotechnology 28 (38), 38LT02, 2017 | 37 | 2017 |
| Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell FM Simanjuntak, P Singh, S Chandrasekaran, FJ Lumbantoruan, ... Semiconductor Science and Technology 32 (12), 124003, 2017 | 35 | 2017 |
Sridhar ChandrasekaranAssistant Professor, School of Electronics Engineering, Vellore Institute of Technology, ChennaiDirección de correo verificada de vit.ac.in
