Sangbum Kim

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H.-S. Philip WongProfessor of Electrical Engineering, Stanford UniversityDirección de correo verificada de stanford.edu
Kenneth E. GoodsonStanford Mechanical Engineering, Davies Provostial ProfessorDirección de correo verificada de stanford.edu
Mehdi AsheghiAdjunct Professor of Mechanical Engineerig, Stanford UniversityDirección de correo verificada de stanford.edu
Masatoshi IshiiIBM Research - TokyoDirección de correo verificada de jp.ibm.com
Wanki KimSamsung Semiconductor R&D Center, IBM Research, Stanford UniversityDirección de correo verificada de us.ibm.com
Huai-Yu ChengProject Department Manager at Macronix International Co., LTDDirección de correo verificada de us.ibm.com
Geoffrey W. BurrIBM Research - AlmadenDirección de correo verificada de us.ibm.com
kohji hosokawaIBM Research TokyoDirección de correo verificada de jp.ibm.com
Abu SebastianDistinguished Scientist, IBM Research - ZurichDirección de correo verificada de zurich.ibm.com
Sukru Burc EryilmazElectrical Engineering, Stanford UniversityDirección de correo verificada de stanford.edu
Seyoung KimPOSTECHDirección de correo verificada de postech.ac.kr
Jiale LiangStanford UniversityDirección de correo verificada de stanford.edu
Erh-Kun LaiMacronixDirección de correo verificada de mxic.com.tw
Manuel Le GalloIBM Research-ZurichDirección de correo verificada de zurich.ibm.com
Robert L BruceResearch Staff Member, IBM ResearchDirección de correo verificada de us.ibm.com
RakeshGnana David JeyasinghStanford UniversityDirección de correo verificada de stanford.edu
Bipin RajendranProfessor of Intelligent Computing Systems at King's College LondonDirección de correo verificada de kcl.ac.uk
Jaeho LeeAssociate Professor, University of California, IrvineDirección de correo verificada de uci.edu
Evangelos EleftheriouCTO & Co-Founder - Axelera.aiDirección de correo verificada de axelera.ai
Atsuya OkazakiIBM Research - TokyoDirección de correo verificada de jp.ibm.com

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Sangbum Kim

Materials Science and Engineering, Seoul National University

Dirección de correo verificada de snu.ac.kr - Página principal

neuromorphic semiconductor memory nanoelectronics neuromorphic computing


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Phase change memory HSP Wong, S Raoux, SB Kim, J Liang, JP Reifenberg, B Rajendran, ... Proceedings of the IEEE 98 (12), 2201-2227, 2010	2302	2010
Neuromorphic computing using non-volatile memory GW Burr, RM Shelby, A Sebastian, S Kim, S Kim, S Sidler, K Virwani, ... Advances in Physics: X 2 (1), 89-124, 2017	1329	2017
Recent Progress in Phase-Change Memory Technology GW Burr, MJ Brightsky, A Sebastian, HY Cheng, JY Wu, S Kim, NE Sosa, ... IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6 (2 …, 2016	438	2016
Tutorial: Brain-inspired computing using phase-change memory devices A Sebastian, M Le Gallo, GW Burr, S Kim, M BrightSky, E Eleftheriou Journal of Applied Physics 124 (11), 111101, 2018	306	2018
Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array SB Eryilmaz, D Kuzum, R Jeyasingh, SB Kim, M BrightSky, C Lam, ... Frontiers in Neuroscience 8, 2014	232	2014
NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning S Kim, M Ishii, S Lewis, T Perri, M BrightSky, W Kim, R Jordan, GW Burr, ... 2015 IEEE International Electron Devices Meeting (IEDM), 17.1. 1-17.1. 4, 2015	208	2015
Metal nitride keyhole or spacer phase change memory cell structures MJ BrightSky, S Kim, CH Lam, NE Sosa US Patent App. 10/056,546, 2018	168*	2018
Thermal boundary resistance measurements for phase-change memory devices JP Reifenberg, KW Chang, MA Panzer, S Kim, JA Rowlette, M Asheghi, ... IEEE Electron Device Letters 31 (1), 56-58, 2009	148	2009
Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films JP Reifenberg, MA Panzer, SB Kim, AM Gibby, Y Zhang, S Wong, ... Applied Physics Letters 91 (11), 111904, 2007	148	2007
Dual‐Phase All‐Inorganic Cesium Halide Perovskites for Conducting‐Bridge Memory‐Based Artificial Synapses SG Kim, Q Van Le, JS Han, H Kim, MJ Choi, SA Lee, TL Kim, SB Kim, ... Advanced Functional Materials 29 (49), 1906686, 2019	106	2019
Phonon and electron transport through Ge₂Sb₂Te₅ films and interfaces bounded by metals J Lee, E Bozorg-Grayeli, SB Kim, M Asheghi, HS Philip Wong, ... Applied Physics Letters 102 (19), 191911, 2013	104	2013
Competing memristors for brain-inspired computing SJ Kim, SB Kim, HW Jang Iscience 24 (1), 101889, 2021	101	2021
Self‐healing of a confined phase change memory device with a metallic surfactant layer Y Xie, W Kim, Y Kim, S Kim, J Gonsalves, M BrightSky, C Lam, Y Zhu, ... Advanced Materials 30 (9), 1705587, 2018	100	2018
Scaling the MOSFET gate dielectric: From high-k to higher-k? MM Frank, SB Kim, SL Brown, J Bruley, M Copel, M Hopstaken, ... Microelectronic Engineering 86 (7-9), 1603-1608, 2009	93	2009
ALD-based confined PCM with a metallic liner toward unlimited endurance W Kim, M BrightSky, T Masuda, N Sosa, S Kim, R Bruce, F Carta, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2016	86	2016
Resistance and threshold switching voltage drift behavior in phase-change memory and their temperature dependence at microsecond time scales studied using a micro-thermal stage SB Kim, B Lee, M Asheghi, F Hurkx, JP Reifenberg, KE Goodson, ... IEEE Transactions on Electron Devices 58 (3), 584-592, 2011	82	2011
A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N)_xSb_yTe_zphase change material HY Cheng, JY Wu, R Cheek, S Raoux, M BrightSky, D Garbin, S Kim, ... 2012 International Electron Devices Meeting, 31.1. 1-31.1. 4, 2012	70	2012
A phase change memory cell with metallic surfactant layer as a resistance drift stabilizer S Kim, N Sosa, M BrightSky, D Mori, W Kim, Y Zhu, K Suu, C Lam Electron Devices Meeting (IEDM), 2013 IEEE International, 30.7. 1-30.7. 4, 2013	64	2013
An integrated phase change memory cell with Ge nanowire diode for cross-point memory Y Zhang, SB Kim, JP McVittie, H Jagannathan, JB Ratchford, ... 2007 IEEE Symposium on VLSI Technology, 98-99, 2007	63	2007
In situ transmission electron microscopy observation of nanostructural changes in phase-change memory S Meister, SB Kim, JJ Cha, HSP Wong, Y Cui ACS nano 5 (4), 2742-2748, 2011	62	2011

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