دنبال کردن
Stefan Petzold (born Vogel)
Stefan Petzold (born Vogel)
ایمیل تأیید شده در oxide.tu-darmstadt.de - صفحهٔ اصلی
عنوان
نقل شده توسط
نقل شده توسط
سال
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices
SU Sharath, S Vogel, L Molina‐Luna, E Hildebrandt, C Wenger, J Kurian, ...
Advanced Functional Materials 27 (32), 1700432, 2017
1272017
Forming‐free grain boundary engineered hafnium oxide resistive random access memory devices
S Petzold, A Zintler, R Eilhardt, E Piros, N Kaiser, SU Sharath, T Vogel, ...
Advanced Electronic Materials 5 (10), 1900484, 2019
862019
Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM
SU Sharath, MJ Joseph, S Vogel, E Hildebrandt, P Komissinskiy, J Kurian, ...
Applied Physics Letters 109 (17), 2016
672016
Defect-stabilized substoichiometric polymorphs of hafnium oxide with semiconducting properties
N Kaiser, T Vogel, A Zintler, S Petzold, A Arzumanov, E Piros, R Eilhardt, ...
ACS Applied Materials & Interfaces 14 (1), 1290-1303, 2021
472021
Electron holography on HfO2/HfO2− x bilayer structures with multilevel resistive switching properties
G Niu, MA Schubert, SU Sharath, P Zaumseil, S Vogel, C Wenger, ...
Nanotechnology 28 (21), 215702, 2017
412017
Heavy ion radiation effects on hafnium oxide-based resistive random access memory
S Petzold, SU Sharath, J Lemke, E Hildebrandt, C Trautmann, L Alff
IEEE Transactions on Nuclear Science 66 (7), 1715-1718, 2019
402019
Analysis and simulation of the multiple resistive switching modes occurring in HfOx-based resistive random access memories using memdiodes
S Petzold, E Miranda, SU Sharath, J Muñoz-Gorriz, T Vogel, E Piros, ...
Journal of applied physics 125 (23), 2019
352019
Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching
S Petzold, E Piros, R Eilhardt, A Zintler, T Vogel, N Kaiser, A Radetinac, ...
Advanced Electronic Materials 6 (11), 2000439, 2020
332020
Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier
E Piros, S Petzold, A Zintler, N Kaiser, T Vogel, R Eilhardt, C Wenger, ...
Applied Physics Letters 117 (1), 2020
302020
Gradual reset and set characteristics in yttrium oxide based resistive random access memory
S Petzold, E Piros, SU Sharath, A Zintler, E Hildebrandt, L Molina-Luna, ...
Semiconductor Science and Technology 34 (7), 075008, 2019
302019
Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy
G Niu, P Calka, P Huang, SU Sharath, S Petzold, A Gloskovskii, ...
Materials Research Letters 7 (3), 117-123, 2019
302019
Crystal and electronic structure of oxygen vacancy stabilized rhombohedral hafnium oxide
N Kaiser, YJ Song, T Vogel, E Piros, T Kim, P Schreyer, S Petzold, ...
ACS Applied Electronic Materials 5 (2), 754-763, 2023
262023
FIB based fabrication of an operative Pt/HfO2/TiN device for resistive switching inside a transmission electron microscope
A Zintler, U Kunz, Y Pivak, SU Sharath, S Vogel, E Hildebrandt, HJ Kleebe, ...
Ultramicroscopy 181, 144-149, 2017
262017
Role of Oxygen Defects in Conductive-Filament Formation in -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy
E Piros, M Lonsky, S Petzold, A Zintler, SU Sharath, T Vogel, N Kaiser, ...
Physical Review Applied 14 (3), 034029, 2020
202020
Kinetically induced low-temperature synthesis of Nb3Sn thin films
N Schäfer, N Karabas, JP Palakkal, S Petzold, M Major, N Pietralla, L Alff
Journal of Applied Physics 128 (13), 2020
182020
Oxide thickness-dependent resistive switching characteristics of Cu/HfO2/Pt ECM devices
T Kim, T Vogel, E Piros, D Nasiou, N Kaiser, P Schreyer, R Winkler, ...
Applied Physics Letters 122 (2), 2023
172023
Defect-induced phase transition in hafnium oxide thin films: comparing heavy ion irradiation and oxygen-engineering effects
T Vogel, N Kaiser, S Petzold, E Piros, N Guillaume, G Lefévre, ...
IEEE Transactions on Nuclear Science 68 (8), 1542-1547, 2021
172021
Structural and electrical response of emerging memories exposed to heavy ion radiation
T Vogel, A Zintler, N Kaiser, N Guillaume, G Lefèvre, M Lederer, AL Serra, ...
ACS nano 16 (9), 14463-14478, 2022
152022
Controlling the formation of conductive pathways in memristive devices
R Winkler, A Zintler, S Petzold, E Piros, N Kaiser, T Vogel, D Nasiou, ...
Advanced Science 9 (33), 2201806, 2022
142022
Matching conflicting oxidation conditions and strain accommodation in perovskite epitaxial thin-film ferroelectric varactors
L Zeinar, P Salg, D Walk, S Petzold, A Arzumanov, R Jakoby, H Maune, ...
Journal of Applied Physics 128 (21), 2020
102020
سیستم در حال حاضر قادر به انجام عملکرد نیست. بعداً دوباره امتحان کنید.
مقاله‌ها 1–20