| Short channel effects in graphene-based field effect transistors targeting radio-frequency applications PC Feijoo, D Jiménez, X Cartoixà 2D Materials 3 (2), 025036, 2016 | 38 | 2016 |
| Compact modeling technology for the simulation of integrated circuits based on graphene field‐effect transistors F Pasadas, PC Feijoo, N Mavredakis, A Pacheco‐Sanchez, FA Chaves, ... Advanced Materials 34 (48), 2201691, 2022 | 30 | 2022 |
| Scaling of graphene field-effect transistors supported on hexagonal boron nitride: Radio-frequency stability as a limiting factor PC Feijoo, F Pasadas, JM Iglesias, MJ Martín, R Rengel, C Li, W Kim, ... Nanotechnology 28 (48), 485203, 2017 | 27 | 2017 |
| Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties PC Feijoo, A Del Prado, M Toledano-Luque, E San Andrés, ML Lucía Journal of Applied Physics 107 (8), 2010 | 24 | 2010 |
| Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors A Pacheco-Sanchez, N Mavredakis, PC Feijoo, W Wei, E Pallecchi, ... IEEE Transactions on Electron Devices 67 (12), 5790-5796, 2020 | 19 | 2020 |
| Radio frequency performance projection and stability tradeoff of h-BN encapsulated graphene field-effect transistors PC Feijoo, F Pasadas, JM Iglesias, R Rengel, D Jiménez IEEE Transactions on Electron Devices 66 (3), 1567-1573, 2019 | 18 | 2019 |
| Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs PC Feijoo, T Kauerauf, M Toledano-Luque, M Togo, E San Andrés, ... IEEE Transactions on Device and Materials Reliability 12 (1), 166-170, 2012 | 16 | 2012 |
| Plasma oxidation of silicon in a microwave discharge and its specificity J Musil, F Zacek, L Bardos, G Loncar, R Dragila Journal of Physics D: Applied Physics 12 (5), L61, 1979 | 16 | 1979 |
| Contact resistance extraction of graphene FET technologies based on individual device characterization A Pacheco-Sanchez, PC Feijoo, D Jiménez Solid-State Electronics 172, 107882, 2020 | 15 | 2020 |
| Optimization of scandium oxide growth by high pressure sputtering on silicon PC Feijoo, MA Pampillón, E San Andrés, ML Lucía Thin Solid Films 526, 81-86, 2012 | 15 | 2012 |
| Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation MÁ Pampillón, PC Feijoo, E San Andrés Microelectronic engineering 109, 236-239, 2013 | 13 | 2013 |
| Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering PC Feijoo, MÁ Pampillón, ES Andrés Journal of Vacuum Science & Technology B 31 (1), 2013 | 13 | 2013 |
| Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon MÁ Pampillón, PC Feijoo, E San Andrés, ML Lucía Journal of Vacuum Science & Technology B 31 (1), 2013 | 13 | 2013 |
| Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering MA Pampillon, PC Feijoo, E San Andres, ML Lucía, A Del Prado, ... Microelectronic engineering 88 (9), 2991-2996, 2011 | 13 | 2011 |
| Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study MA Pampillón, PC Feijoo, E San Andrés, M Toledano-Luque, A Del Prado, ... Microelectronic engineering 88 (7), 1357-1360, 2011 | 13 | 2011 |
| 2D pn junctions driven out-of-equilibrium FA Chaves, PC Feijoo, D Jiménez Nanoscale advances 2 (8), 3252-3262, 2020 | 12 | 2020 |
| Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering PC Feijoo, MA Pampillón, E San Andrés, JLG Fierro Thin Solid Films 593, 62-66, 2015 | 10 | 2015 |
| An extraction method for mobility degradation and contact resistance of graphene transistors A Pacheco-Sanchez, N Mavredakis, PC Feijoo, D Jiménez IEEE Transactions on Electron Devices 69 (7), 4037-4041, 2022 | 9 | 2022 |
| Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications F Pasadas, A Medina-Rull, PC Feijoo, A Pacheco-Sanchez, EG Marin, ... Nano Express 2 (3), 036001, 2021 | 9 | 2021 |
| Does carrier velocity saturation help to enhance f max in graphene field-effect transistors? PC Feijoo, F Pasadas, M Bonmann, M Asad, X Yang, A Generalov, ... Nanoscale advances 2 (9), 4179-4186, 2020 | 9 | 2020 |
David JiménezProfessor at UAB (Universitat Autònoma de Barcelona)ایمیل تأیید شده در uab.es
