دنبال کردن
Arthur Witulski
Arthur Witulski
Research Professor Electrical Engineering, Vanderbilt University
ایمیل تأیید شده در vanderbilt.edu - صفحهٔ اصلی
عنوان
نقل شده توسط
نقل شده توسط
سال
Ultrawide‐bandgap semiconductors: research opportunities and challenges‏
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...‏
Advanced Electronic Materials 4 (1), 1600501, 2018‏
14392018
Charge collection and charge sharing in a 130 nm CMOS technology‏
OA Amusan, AF Witulski, LW Massengill, BL Bhuva, PR Fleming, ML Alles, ...‏
IEEE Transactions on nuclear science 53 (6), 3253-3258, 2006‏
4932006
Large signal stability criteria for distributed systems with constant power loads‏
M Belkhayat, R Cooley, A Witulski‏
Proceedings of PESC'95-Power Electronics Specialist Conference 2, 1333-1338, 1995‏
2711995
A comparison of resonant topologies in high voltage DC applications‏
SD Johnson, AF Witulski, RW Erickson‏
1987 2nd IEEE Applied Power Electronics Conference and Exposition, 145-156, 1987‏
2631987
Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies‏
B Narasimham, BL Bhuva, RD Schrimpf, LW Massengill, MJ Gadlage, ...‏
IEEE Transactions on Nuclear Science 54 (6), 2506-2511, 2007‏
2322007
Introduction to modeling of transformers and coupled inductors‏
AF Witulski‏
IEEE Transactions on Power Electronics 10 (3), 349-357, 1995‏
2221995
Models and algorithmic limits for an ECC-based approach to hardening sub-100-nm SRAMs‏
MA Bajura, Y Boulghassoul, R Naseer, S DasGupta, AF Witulski, ...‏
IEEE Transactions on Nuclear Science 54 (4), 935-945, 2007‏
1792007
On-chip characterization of single-event transient pulsewidths‏
B Narasimham, V Ramachandran, BL Bhuva, RD Schrimpf, AF Witulski, ...‏
IEEE Transactions on Device and Materials Reliability 6 (4), 542-549, 2006‏
1722006
Extension of state space averaging to resonant switches-and beyond‏
AF Witulski, RW Erickson‏
20th annual ieee power electronics specialists conference, 476-483, 1989‏
1591989
Critical charge characterization for soft error rate modeling in 90nm SRAM‏
R Naseer, Y Boulghassoul, J Draper, S DasGupta, A Witulski‏
2007 IEEE International Symposium on Circuits and Systems (ISCAS), 1879-1882, 2007‏
1582007
Single-event burnout mechanisms in SiC power MOSFETs‏
AF Witulski, DR Ball, KF Galloway, A Javanainen, JM Lauenstein, ...‏
IEEE Transactions on Nuclear Science 65 (8), 1951-1955, 2018‏
1532018
Single event upsets in deep-submicrometer technologies due to charge sharing‏
OA Amusan, LW Massengill, MP Baze, AL Sternberg, AF Witulski, ...‏
IEEE Transactions on Device and Materials Reliability 8 (3), 582-589, 2008‏
1472008
A hardened-by-design technique for RF digital phase-locked loops‏
TD Loveless, LW Massengill, BL Bhuva, WT Holman, AF Witulski, ...‏
IEEE transactions on nuclear science 53 (6), 3432-3438, 2006‏
1442006
HBD layout isolation techniques for multiple node charge collection mitigation‏
JD Black, AL Sternberg, ML Alles, AF Witulski, BL Bhuva, LW Massengill, ...‏
IEEE transactions on nuclear science 52 (6), 2536-2541, 2005‏
1352005
Effect of well and substrate potential modulation on single event pulse shape in deep submicron CMOS‏
S DasGupta, AF Witulski, BL Bhuva, ML Alles, RA Reed, OA Amusan, ...‏
IEEE Transactions on Nuclear Science 54 (6), 2407-2412, 2007‏
1332007
Small signal equivalent circuit modeling of resonant converters‏
AF Witulski, AF Hernandez, RW Erickson‏
IEEE Transactions on Power Electronics 6 (1), 11-27, 1991‏
1281991
Layout technique for single-event transient mitigation via pulse quenching‏
NM Atkinson, AF Witulski, WT Holman, JR Ahlbin, BL Bhuva, ...‏
IEEE Transactions on Nuclear Science 58 (3), 885-890, 2011‏
1272011
Design techniques to reduce SET pulse widths in deep-submicron combinational logic‏
OA Amusan, LW Massengill, BL Bhuva, S DasGupta, AF Witulski, ...‏
IEEE Transactions on Nuclear Science 54 (6), 2060-2064, 2007‏
1252007
The effect of layout topology on single-event transient pulse quenching in a 65 nm bulk CMOS process‏
JR Ahlbin, MJ Gadlage, DR Ball, AW Witulski, BL Bhuva, RA Reed, ...‏
IEEE Transactions on Nuclear Science 57 (6), 3380-3385, 2010‏
1232010
Analysis of parasitic PNP bipolar transistor mitigation using well contacts in 130 nm and 90 nm CMOS technology‏
BD Olson, OA Amusan, S Dasgupta, LW Massengill, AF Witulski, ...‏
IEEE Transactions on Nuclear Science 54 (4), 894-897, 2007‏
1232007
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مقاله‌ها 1–20