| Two-stage amplification of an ultrasensitive MXene-based intelligent artificial eardrum GY Gou, XS Li, JM Jian, H Tian, F Wu, J Ren, XS Geng, JD Xu, YC Qiao, ... Science Advances 8 (13), eabn2156, 2022 | 85 | 2022 |
| Graphene‐based devices for thermal energy conversion and utilization YT Li, Y Tian, MX Sun, T Tu, ZY Ju, GY Gou, YF Zhao, ZY Yan, F Wu, ... Advanced Functional Materials 30 (8), 1903888, 2020 | 49 | 2020 |
| DFT-1/2 and shell DFT-1/2 methods: electronic structure calculation for semiconductors at LDA complexity GQ Mao, ZY Yan, KH Xue, Z Ai, S Yang, H Cui, JH Yuan, TL Ren, X Miao Journal of Physics: Condensed Matter 34 (40), 403001, 2022 | 45 | 2022 |
| High-quality single crystal perovskite for highly sensitive X-ray detector X Geng, Q Feng, R Zhao, T Hirtz, G Dun, Z Yan, J Ren, H Zhang, R Liang, ... IEEE Electron Device Letters 41 (2), 256-259, 2019 | 44 | 2019 |
| Two-Mode MoS2 Filament Transistor with Extremely Low Subthreshold Swing and Record High On/Off Ratio XF Wang, H Tian, Y Liu, S Shen, Z Yan, N Deng, Y Yang, TL Ren ACS nano 13 (2), 2205-2212, 2019 | 41 | 2019 |
| Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS2 Heterojunction F Wu, H Tian, Z Yan, J Ren, T Hirtz, G Gou, Y Shen, Y Yang, TL Ren ACS Applied Materials & Interfaces 13 (22), 26161-26169, 2021 | 31 | 2021 |
| Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress A Yan, C Wang, J Yan, Z Wang, E Zhang, Y Dong, ZY Yan, T Lu, T Cui, ... Advanced Functional Materials 34 (3), 2304409, 2024 | 29 | 2024 |
| Vertical iontronic energy storage based on osmotic effects and electrode redox reactions F Yang, P Peng, ZY Yan, H Fan, X Li, S Li, H Liu, TL Ren, Y Zhou, ... Nature Energy 9 (3), 263-271, 2024 | 18 | 2024 |
| A 10 nm Short Channel MoS2 Transistor without the Resolution Requirement of Photolithography F Wu, J Ren, Y Yang, Z Yan, H Tian, G Gou, X Wang, Z Zhang, X Yang, ... Advanced Electronic Materials 7 (12), 2100543, 2021 | 18 | 2021 |
| A novel thermal acoustic device based on vertical graphene film T Tu, ZY Ju, YT Li, GY Gou, Y Tian, F Wu, ZY Yan, HF Liu, TZ Yang, ... AIP Advances 9 (7), 2019 | 16 | 2019 |
| Optimal Weight Models for Ferroelectric Synapses Toward Neuromorphic Computing T Lu, X Zhao, H Liu, Z Yan, R Zhao, M Shao, J Yan, M Yang, Y Yang, ... IEEE Transactions on Electron Devices 70 (5), 2297-2303, 2023 | 8 | 2023 |
| The insight and evaluation of ultra-scaled sub-1 nm gate length transistors H Tian, Y Shen, Z Yan, Y Liu, F Wu, TL Ren Microelectronic Engineering 273, 111963, 2023 | 6 | 2023 |
| Transistor Subthreshold Swing Lowered by 2-D Heterostructures F Wu, H Tian, Z Yan, Y Shen, J Ren, Y Yang, TL Ren IEEE Transactions on Electron Devices 68 (1), 411-414, 2020 | 5 | 2020 |
| Vertical WSe2/BP/MoS2 heterostructures with tunneling behaviors and photodetection F Wu, ZQ Zhu, H Tian, Z Yan, Y Liu, Y Xu, CY Xing, T Ren Applied Physics Letters 121 (11), 2022 | 4 | 2022 |
| Ambipolar transport compact models for two-dimensional materials based field-effect transistors Z Yan, G Gou, J Ren, F Wu, Y Shen, H Tian, Y Yang, TL Ren Tsinghua Science and Technology 26 (5), 574-591, 2021 | 4 | 2021 |
| Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications MH Shao, RT Zhao, H Liu, WJ Xu, YD Guo, DP Huang, YZ Yang, XR Li, ... Chip, 100101, 2024 | 3 | 2024 |
| A drain current formula for two-dimensional field-effect transistors with one-shot convergence algorithm ZY Yan, Z Hou, F Wu, R Zhao, J Yan, A Yan, Z Wang, KH Xue, H Liu, ... 2D Materials 10 (4), 045026, 2023 | 3 | 2023 |
| Ultra-Low Voltage Schmitt Triggers Implemented by HfO2-Based Ferroelectric Field-Effect Transistors R Zhao, H Liu, T Lu, M Shao, X Zhao, Z Yan, Y Yang, TL Ren IEEE Electron Device Letters 43 (7), 1145-1148, 2022 | 3 | 2022 |
| Quasi-fermi-level phase space and its applications in ambipolar two-dimensional field-effect transistors ZY Yan, KH Xue, Z Hou, Y Shen, H Tian, Y Yang, TL Ren Physical Review Applied 17 (5), 054027, 2022 | 3 | 2022 |
| Dynamically Tunable Subthermionic Subthreshold Swing and Hysteresis in a Hf0.5Zr0.5O2-Based Ferroelectric Device Unit R Zhao, Z Yan, H Liu, T Lu, X Zhao, M Shao, Y Yang, TL Ren IEEE Transactions on Electron Devices 69 (12), 7102-7106, 2022 | 2 | 2022 |