دنبال کردن
A F M Anhar Uddin Bhuiyan
A F M Anhar Uddin Bhuiyan
Assistant Professor, Electrical and Computer Engineering, University of Massachusetts Lowell
ایمیل تأیید شده در uml.edu - صفحهٔ اصلی
عنوان
نقل شده توسط
نقل شده توسط
سال
MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties‏
Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao‏
Applied Physics Letters 114 (25), 2019‏
3392019
MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping‏
AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ...‏
Applied Physics Letters 115 (12), 2019‏
1712019
Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films‏
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ...‏
APL Materials 8 (3), 2020‏
1372020
Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3‏
Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ...‏
physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020‏
1232020
MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates‏
AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ...‏
Crystal Growth & Design 20 (10), 6722-6730, 2020‏
1002020
High-Mobility MOCVD β-Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium‏
L Meng, Z Feng, AFMAU Bhuiyan, H Zhao‏
Crystal Growth & Design 22 (6), 3896-3904, 2022‏
802022
Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition‏
H Ghadi, JF McGlone, CM Jackson, E Farzana, Z Feng, AFM Bhuiyan, ...‏
APL Materials 8 (2), 2020‏
802020
Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors‏
NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ...‏
IEEE Transactions on Electron Devices 68 (1), 29-35, 2020‏
642020
Mg acceptor doping in MOCVD (010) β-Ga2O3‏
Z Feng, AFMAU Bhuiyan, NK Kalarickal, S Rajan, H Zhao‏
Applied Physics Letters 117 (22), 222106, 2020‏
622020
Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD‏
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao‏
Applied Physics Letters 117 (25), 2020‏
612020
Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films‏
JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ...‏
APL Materials 9 (5), 2021‏
552021
MOCVD growth of β-phase (AlxGa1− x) 2O3 on (2¯ 01) β-Ga2O3 substrates‏
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao‏
Applied Physics Letters 117 (14), 2020‏
552020
Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1− x) 2O3 thin films on m-plane sapphire substrates‏
AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao‏
APL Materials 9 (10), 2021‏
542021
Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage‏
S Sharma, L Meng, AFMAU Bhuiyan, Z Feng, D Eason, H Zhao, ...‏
IEEE Electron Device Letters 43 (12), 2029-2032, 2022‏
472022
β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching‏
HC Huang, Z Ren, AFM Anhar Uddin Bhuiyan, Z Feng, Z Yang, X Luo, ...‏
Applied Physics Letters 121 (5), 2022‏
462022
Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX‏
CN Saha, A Vaidya, AFM Bhuiyan, L Meng, S Sharma, H Zhao, ...‏
Applied Physics Letters 122 (18), 2023‏
432023
Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3‏
H Ghadi, JF McGlone, Z Feng, AFM Bhuiyan, H Zhao, AR Arehart, ...‏
Applied Physics Letters 117 (17), 2020‏
402020
Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux‏
NK Kalarickal, A Fiedler, S Dhara, HL Huang, AFM Bhuiyan, MW Rahman, ...‏
Applied Physics Letters 119 (12), 2021‏
332021
MOCVD growth of (010) β-(AlxGa1−x)2O3 thin films‏
AFMAU Bhuiyan, Z Feng, L Meng, H Zhao‏
Journal of Materials Research 36 (23), 4804-4815, 2021‏
282021
A combined approach of atom probe tomography and unsupervised machine learning to understand phase transformation in (AlxGa1− x) 2O3‏
J Sarker, S Broderick, AFM Bhuiyan, Z Feng, H Zhao, B Mazumder‏
Applied Physics Letters 116 (15), 2020‏
282020
سیستم در حال حاضر قادر به انجام عملکرد نیست. بعداً دوباره امتحان کنید.
مقاله‌ها 1–20