| An optically pumped 2.5 μm GeSn laser on Si operating at 110 K S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ... Applied Physics Letters 109 (17), 2016 | 253 | 2016 |
| Direct-bandgap GeSn grown on silicon with 2230nm photoluminescence SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ... Applied Physics Letters 105 (15), 151109, 2014 | 240 | 2014 |
| Si-based GeSn photodetectors toward mid-infrared imaging applications H Tran, T Pham, J Margetis, Y Zhou, W Dou, PC Grant, JM Grant, ... Acs Photonics 6 (11), 2807-2815, 2019 | 224 | 2019 |
| Electrically injected GeSn lasers on Si operating up to 100 K Y Zhou, Y Miao, S Ojo, H Tran, G Abernathy, JM Grant, S Amoah, ... Optica 7 (8), 924-928, 2020 | 215 | 2020 |
| Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ... ACs Photonics 5 (3), 827-833, 2017 | 211 | 2017 |
| Systematic study of Ge1− xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ... Journal of Applied Physics 119 (10), 2016 | 166 | 2016 |
| Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection T Pham, W Du, H Tran, J Margetis, J Tolle, G Sun, RA Soref, HA Naseem, ... Optics express 24 (5), 4519-4531, 2016 | 156 | 2016 |
| Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth W Dou, M Benamara, A Mosleh, J Margetis, P Grant, Y Zhou, S Al-Kabi, ... Scientific reports 8 (1), 5640, 2018 | 153 | 2018 |
| Monolithic infrared silicon photonics: The rise of (Si) GeSn semiconductors O Moutanabbir, S Assali, X Gong, E O'Reilly, CA Broderick, B Marzban, ... Applied Physics Letters 118 (11), 2021 | 151 | 2021 |
| Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si Y Zhou, W Dou, W Du, S Ojo, H Tran, SA Ghetmiri, J Liu, G Sun, R Soref, ... Acs Photonics 6 (6), 1434-1441, 2019 | 143 | 2019 |
| High‐speed and high‐responsivity hybrid silicon/black‐phosphorus waveguide photodetectors at 2 µm Y Yin, R Cao, J Guo, C Liu, J Li, X Feng, H Wang, W Du, A Qadir, H Zhang, ... Laser & Photonics Reviews 13 (6), 1900032, 2019 | 129 | 2019 |
| Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ... Applied Physics Letters 104 (24), 2014 | 108 | 2014 |
| Competition of optical transitions between direct and indirect bandgaps in Ge1− xSnx W Du, SA Ghetmiri, BR Conley, A Mosleh, A Nazzal, RA Soref, G Sun, ... Applied Physics Letters 105 (5), 2014 | 103 | 2014 |
| Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection BR Conley, A Mosleh, SA Ghetmiri, W Du, RA Soref, G Sun, J Margetis, ... Optics express 22 (13), 15639-15652, 2014 | 102 | 2014 |
| Growth and characterization of epitaxial Ge1-XSnx alloys and heterostructures using a commercial CVD system J Margetis, SA Ghetmiri, W Du, BR Conley, A Mosleh, R Soref, G Sun, ... ECS Transactions 64 (6), 711, 2014 | 101 | 2014 |
| Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri, S Al-Kabi, A Mosleh, M Alher, ... Journal of Applied Physics 120 (2), 2016 | 97 | 2016 |
| Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff BR Conley, J Margetis, W Du, H Tran, A Mosleh, SA Ghetmiri, J Tolle, ... Applied Physics Letters 105 (22), 2014 | 97 | 2014 |
| Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3% W Dou, Y Zhou, J Margetis, SA Ghetmiri, S Al-Kabi, W Du, J Liu, G Sun, ... Optics letters 43 (19), 4558-4561, 2018 | 91 | 2018 |
| High performance Ge0. 89Sn0. 11 photodiodes for low-cost shortwave infrared imaging H Tran, T Pham, W Du, Y Zhang, PC Grant, JM Grant, G Sun, RA Soref, ... Journal of Applied Physics 124 (1), 2018 | 89 | 2018 |
| Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas J Margetis, A Mosleh, S Al-Kabi, SA Ghetmiri, W Du, W Dou, M Benamara, ... Journal of Crystal Growth 463, 128-133, 2017 | 70 | 2017 |
Shui-Qing (Fisher) YuUniversity of Arkansasایمیل تأیید شده در uark.edu
