Low Temperature Characteristics of HfOx-Based Resistive Random Access Memory R Fang, W Chen, L Gao, W Yu, S Yu IEEE Electron Device Letters 36 (6), 567 - 569, 2015 | 122 | 2015 |
Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells W Chen, H Barnaby, M Kozicki IEEE Electron Device Letters 37 (5), 580 - 583, 2016 | 103 | 2016 |
A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells W Chen, R Fang, M Balaban, W Yu, Y Gonzalez-Velo, HJ Barnaby, ... Nanotechnology 27 (25), 255202(9pp), 2016 | 85 | 2016 |
Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory R Fang, YG Velo, W Chen, KE Holbert, MN Kozicki, H Barnaby, S Yu Applied Physics Letters 104 (18), 183507, 2014 | 85 | 2014 |
In Situ TEM Imaging of Defect Dynamics under Electrical Bias in Resistive Switching Rutile-TiO 2 RJ Kamaladasa, AA Sharma, YT Lai, W Chen, PA Salvador, JA Bain, ... Microscopy and Microanalysis 21 (01), 140-153, 2015 | 62 | 2015 |
SiO2 based conductive bridging random access memory W Chen, S Tappertzhofen, HJ Barnaby, MN Kozicki Journal of Electroceramics 39 (1-4), 109-131, 2017 | 58 | 2017 |
Elimination of high transient currents and electrode damage during electroformation of TiO2-based resistive switching devices YM Lu, M Noman, W Chen, PA Salvador, JA Bain, M Skowronski Journal of Physics D: Applied Physics 45 (39), 395101, 2012 | 36 | 2012 |
Dislocation impact on resistive switching in single-crystal SrTiO3 RJ Kamaladasa, M Noman, W Chen, PA Salvador, JA Bain, M Skowronski, ... Journal of Applied Physics 113 (23), 234510, 2013 | 33 | 2013 |
A Study of Gamma-ray Exposure of Cu-SiO2 Programmable Metallization Cells W Chen, HJ Barnaby, MN Kozicki, AH Edwards, Y Gonzalez-Velo, R Fang, ... IEEE Transaction on Nuclear Science 62 (6), 2404 - 2411, 2015 | 31 | 2015 |
Demonstration Of Spike Timing Dependent Plasticity in CBRAM Devices With Silicon Neurons D Mahalanabis, M Sivaraj, W Chen, S Shah, HJ Barnaby, MN Kozicki, ... IEEE International symposium on circuits and systems (ISCAS), Montreal, Canada, 2016 | 24 | 2016 |
Radiation Hardening by Process of CBRAM resistance switching cells Y Gonzalez-Velo, A Mahmud, W Chen, J Taggart, HJ Barnaby, ... IEEE Transactions on Nuclear Science 63 (4), 2145 - 2151, 2016 | 20 | 2016 |
Low Temperature Characterization of Cu-Cu: silica Based Programmable Metallization Cell W Chen, N Chamele, Y Gonzalez-Velo, HJ Barnaby, MN Kozicki IEEE Electron Device Letters 38 (9), 1244-1247, 2017 | 19 | 2017 |
Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors W Chen, R Fang, HJ Barnaby, MB Balaban, Y Gonzalez-Velo, JL Taggart, ... IEEE Transaction on Nuclear Science 64 (1), 269 - 276, 2017 | 17 | 2017 |
Fabrication and luminescent properties of red phosphor M 3 BO 6: Eu 3+(M= La, Y) G Li, W Ying, C Wenhao, L Jin, LI Xu, GUO Qinglin, Y Zhiping, ... Journal of Rare Earths 28, 295-298, 2010 | 15 | 2010 |
Flexible Ag-ChG Radiation Sensors: Limit of Detection and Dynamic Range Optimization Through Physical Design Tuning A Mahmud, Y Gonzalez-Velo, M Saremi, HJ Barnaby, MN Kozicki, ... IEEE Transactions on Nuclear Science 63 (4), 2137 - 2144, 2016 | 12 | 2016 |
Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO2 Switching Layer W Chen, H Barnaby, M Kozicki IEEE Electron Device Letters 37 (5), 576 - 579, 2016 | 12 | 2016 |
In Situ Synaptic Programming of CBRAM in an Ionizing Radiation Environment JL Taggart, W Chen, Y Gonzalez-Velo, HJ Barnaby, KE Holbert, ... IEEE Transactions on Nuclear Science 65 (1), 192-199, 2018 | 11 | 2018 |
TID Impact on Process Modified CBRAM Cells Y Gonzalez-Velo, A Mahmud, W Chen, J Taggart, HJ Barnaby, ... 2015 15th European Conference on Radiation and Its Effects on Components and …, 2015 | 7 | 2015 |
Optimization of Flexible Ag-Chalcogenide Glass Sensors for Radiation Detection A Mahmud, Y Gonzalez-Velo, HJ Barnaby, MN Kozicki, KE Holbert, ... Radiation and its Effects on Components and Systems (RADECS), Moscow, Russia., 2015 | 4 | 2015 |
Study on the luminescent properties of Tb3+ doped pyrosilicate phosphor L Guan, G Jia, W Chen, L Jin, X Li, Z Yang, Q Guo, G Fu SPIE Photonics Asia 2010, 78521J, 2010 | 4 | 2010 |