| Toward bright and pure single photon emitters at 300 K based on GaN quantum dots on silicon S Tamariz, G Callsen, J Stachurski, K Shojiki, R Butté, N Grandjean Acs Photonics 7 (6), 1515-1522, 2020 | 51 | 2020 |
| AlN grown on Si (1 1 1) by ammonia-molecular beam epitaxy in the 900–1200° C temperature range S Tamariz, D Martin, N Grandjean Journal of Crystal Growth 476, 58-63, 2017 | 51 | 2017 |
| Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots J Stachurski, S Tamariz, G Callsen, R Butté, N Grandjean Light: Science & Applications 11 (1), 114, 2022 | 35 | 2022 |
| Density control of GaN quantum dots on AlN single crystal S Tamariz, G Callsen, N Grandjean Applied Physics Letters 114 (8), 2019 | 29 | 2019 |
| Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range M Hrytsaienko, M Gallart, M Ziegler, O Cregut, S Tamariz, R Butté, ... Journal of Applied Physics 129 (5), 2021 | 7 | 2021 |
| Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field E Carneiro, S Rennesson, S Tamariz, K Harrouche, F Semond, ... physica status solidi (a) 220 (16), 2200846, 2023 | 5 | 2023 |
| High Al-content AlGaN channel high electron mobility transistors on silicon substrate J Mehta, I Abid, J Bassaler, J Pernot, P Ferrandis, M Nemoz, Y Cordier, ... e-Prime-Advances in Electrical Engineering, Electronics and Energy 3, 100114, 2023 | 5 | 2023 |
| First-principles calculation of the electronic and topological properties of crystalline and amorphous AlxGa1− xN SP Tamariz-Kaufmann, AA Valladares, A Valladares, RM Valladares Journal of Non-Crystalline Solids 420, 7-11, 2015 | 5 | 2015 |
| Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility J Bassaler, J Mehta, I Abid, L Konczewicz, S Juillaguet, S Contreras, ... Advanced Electronic Materials 11 (1), 2400069, 2025 | 4 | 2025 |
| Low trapping effects and high blocking voltage in sub-micron-thick AlN/GaN millimeter-wave transistors grown by MBE on silicon substrate E Carneiro, S Rennesson, S Tamariz, K Harrouche, F Semond, ... Electronics 12 (13), 2974, 2023 | 1 | 2023 |
| Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate J Mehta, I Abid, J Bassaler, J Pernot, P Ferrandis, S Rennesson, TH Ngo, ... 2022 Compound Semiconductor Week (CSW), 1-2, 2022 | 1 | 2022 |
| [Award] Sub-micron thick AlN/GaN-on-Si HEMTs grown by MBE with reduced trapping effects and superior blocking voltage for RF applications E Carneiro, S Rennesson, S Tamariz, LB Hammou, K Harrouche, ... 14th International Conference on Nitride Semiconductors (ICNS-14), 2023 | | 2023 |
| LASPE-GaN quantum dots dataset J Stachurski, S Tamariz, G Callsen, R Butté, N Grandjean (No Title), 2023 | | 2023 |
| Low-defect optoelectronic devices grown by mbe and other techniques AJFDNGCHJFCSPT Kaufmann US Patent US20230238478A1, 2023 | | 2023 |
| Sub-Micron thick Step-Graded AlGaN Buffer on Silicon with a Buffer Breakdown Field Higher Than 6 MV/cm E Carneiro, S Rennesson, S Tamariz, F Semond, F Medjdoub International Workshop on Nitride Semiconductors, IWN 2022, 2022 | | 2022 |
| From research to production: how MBE can unlock GaN-on-Si technology F Semond, S Rennesson, S Tamariz, E Carneiro, J Mehta, F Medjdoub The International Conference on Molecular Beam Epitaxy (ICMBE 2022), 2022 | | 2022 |
| Recombination dynamics in high energy (> 3.5 eV) GaNAlN quantum dots: influence of lateral confinement, electric field and the dark-level trapping M Hrytsaienko, M Gallart, M Ziegler, O Crégut, P Gilliot, S Tamariz, R Butté, ... Advances in Ultrafast Condensed Phase Physics III, PC121320I, 2022 | | 2022 |
| Sub-Micron Thick GaN-on-Si HEMTs with More than 7.5 MV/cm Buffer Breakdown Field E Carneiro, S Rennesson, S Tamariz, F Semond, F Medjdoub WOCSDICE EXMATEC 2022, 2022 | | 2022 |
| Room temperature single photon emission from planar GaN/AlN quantum dot samples grown by MBE G Callsen, S Tamariz, N Grandjean 2019 Compound Semiconductor Week (CSW), 1-1, 2019 | | 2019 |
| GaN Quantum Dots for Room Temperature Excitonic Physics SP Tamariz Kaufmann EPFL, 2019 | | 2019 |
Nicolas GrandjeanInstitute of Physics, EPFLایمیل تأیید شده در epfl.ch