| Emerging type‐II superlattices of InAs/InAsSb and InAs/GaSb for mid‐wavelength infrared photodetectors DO Alshahrani, M Kesaria, EA Anyebe, V Srivastava, DL Huffaker Advanced photonics research 3 (2), 2100094, 2022 | 65 | 2022 |
| Evidence for dislocation induced spontaneous formation of GaN nanowalls and nanocolumns on bare C-plane sapphire M Kesaria, S Shetty, SM Shivaprasad Crystal growth & design 11 (11), 4900-4903, 2011 | 60 | 2011 |
| Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3 (0001) M Kesaria, SM Shivaprasad Applied Physics Letters 99 (14), 2011 | 41 | 2011 |
| High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy HP Bhasker, S Dhar, A Sain, M Kesaria, SM Shivaprasad Applied Physics Letters 101 (13), 2012 | 40 | 2012 |
| Recent trends in 8–14 μm type-II superlattice infrared detectors D Kwan, M Kesaria, EA Anyebe, D Huffaker Infrared Physics & Technology 116, 103756, 2021 | 39 | 2021 |
| Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si (111) surface P Kumar, M Tuteja, M Kesaria, UV Waghmare, SM Shivaprasad Applied Physics Letters 101 (13), 2012 | 33 | 2012 |
| InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs JA Keen, D Lane, M Kesaria, ARJ Marshall, A Krier Journal of Physics D: Applied Physics 51 (7), 075103, 2018 | 28 | 2018 |
| Role of substrate temperature in the pulsed laser deposition of zirconium oxide thin film J Mittra, GJ Abraham, M Kesaria, S Bahl, A Gupta, SM Shivaprasad, ... Materials Science Forum 710, 757-761, 2012 | 28 | 2012 |
| InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers Q Lu, Q Zhuang, A Marshall, M Kesaria, R Beanland, A Krier Semiconductor Science and Technology 29 (7), 075011, 2014 | 26 | 2014 |
| Spontaneous formation of GaN nanostructures by molecular beam epitaxy M Kesaria, S Shetty, SM Shivaprasad Journal of crystal growth 326 (1), 191-194, 2011 | 23 | 2011 |
| Low bandgap mid-infrared thermophotovoltaic arrays based on InAs A Krier, M Yin, ARJ Marshall, M Kesaria, SE Krier, S McDougall, ... Infrared Physics & Technology 73, 126-129, 2015 | 21 | 2015 |
| The origin of shape, orientation, and structure of Spontaneously formed Wurtzite GaN nanorods on cubic Si (001) Surface S Shetty, M Kesaria, J Ghatak, SM Shivaprasad Crystal growth & design 13 (6), 2407-2412, 2013 | 18 | 2013 |
| Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared JA Keen, E Repiso, Q Lu, M Kesaria, ARJ Marshall, A Krier Infrared Physics & Technology 93, 375-380, 2018 | 17 | 2018 |
| Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology V Thakur, M Kesaria, SM Shivaprasad Solid state communications 171, 8-13, 2013 | 17 | 2013 |
| Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene E Anyebe, M Kesaria Nano select, 2020 | 14 | 2020 |
| Highly-mismatched InAs/InSe heterojunction diodes ZDKAP A. V. Velichko, Z. R. Kudrynskyi, D. M. Di Paola, O. Makarovsky, M ... Applied Physics Letters 109, 182115, 2016 | 13 | 2016 |
| Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP R Wheatley, M Kesaria, LJ Mawst, JD Kirch, TF Kuech, A Marshall, ... Applied Physics Letters 106 (23), 2015 | 11 | 2015 |
| Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy HP Bhasker, V Thakur, M Kesaria, SM Shivaprasad, S Dhar AIP Conference Proceedings 1583 (1), 252-258, 2014 | 11 | 2014 |
| Effect of interfacial schemes on the optical and structural properties of InAs/GaSb type-ii superlattices D Alshahrani, M Kesaria, JJ Jiménez, D Kwan, V Srivastava, M Delmas, ... ACS Applied Materials & Interfaces 15 (6), 8624-8635, 2023 | 10 | 2023 |
| The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy EA Anyebe, Q Zhuang, M Kesaria, A Krier Semiconductor science and technology 29 (8), 085010, 2014 | 10 | 2014 |
Shivaprasad S MDean and Professor Indian Institute of Technology Dharwadایمیل تأیید شده در jncasr.ac.in