| Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance MP King, X Wu, M Eller, S Samavedam, MR Shaneyfelt, AI Silva, ... IEEE Transactions on Nuclear Science 64 (1), 285-292, 2016 | 83 | 2016 |
| Analysis of bulk FinFET structural effects on single-event cross sections P Nsengiyumva, LW Massengill, ML Alles, BL Bhuva, DR Ball, ... IEEE Transactions on Nuclear Science 64 (1), 441-448, 2016 | 61 | 2016 |
| On-chip measurement of single-event transients in a 45 nm silicon-on-insulator technology TD Loveless, JS Kauppila, S Jagannathan, DR Ball, JD Rowe, ... IEEE Transactions on Nuclear Science 59 (6), 2748-2755, 2012 | 58 | 2012 |
| Estimating single-event logic cross sections in advanced technologies RC Harrington, JS Kauppila, KM Warren, YP Chen, JA Maharrey, ... IEEE Transactions on Nuclear Science 64 (8), 2115-2121, 2017 | 41 | 2017 |
| Circuit-level layout-aware single-event sensitive-area analysis of 40-nm bulk CMOS flip-flops using compact modeling JS Kauppila, TD Haeffner, DR Ball, AV Kauppila, TD Loveless, ... IEEE Transactions on Nuclear Science 58 (6), 2680-2686, 2011 | 37 | 2011 |
| Angular effects on single-event mechanisms in bulk FinFET technologies P Nsengiyumva, LW Massengill, JS Kauppila, JA Maharrey, ... IEEE Transactions on Nuclear Science 65 (1), 223-230, 2017 | 35 | 2017 |
| The impact of charge collection volume and parasitic capacitance on SEUs in SOI-and bulk-FINFET D flip-flops DR Ball, ML Alles, JS Kauppila, RC Harrington, JA Maharrey, ... IEEE Transactions on Nuclear Science 65 (1), 326-330, 2017 | 30 | 2017 |
| Single-event upset characterization across temperature and supply voltage for a 20-nm bulk planar CMOS technology JS Kauppila, WH Kay, TD Haeffner, DL Rauch, TR Assis, NN Mahatme, ... IEEE Transactions on Nuclear Science 62 (6), 2613-2619, 2015 | 28 | 2015 |
| Comparison of total-ionizing-dose effects in bulk and SOI FinFETs at 90 and 295 K TD Haeffner, RF Keller, R Jiang, BD Sierawski, MW McCurdy, EX Zhang, ... IEEE Transactions on Nuclear Science 66 (6), 911-917, 2019 | 27 | 2019 |
| Sensitivity of high-frequency RF circuits to total ionizing dose degradation S Jagannathan, TD Loveless, EX Zhang, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Nuclear Science 60 (6), 4498-4504, 2013 | 26 | 2013 |
| The application of RHBD to n-MOSFETs intended for use in cryogenic-temperature radiation environments B Jun, AK Sutton, RM Diestelhorst, GJ Duperon, JD Cressler, JD Black, ... IEEE Transactions on Nuclear Science 54 (6), 2100-2105, 2007 | 25 | 2007 |
| Effect of transistor variants on single-event transients at the 14-/16-nm bulk FinFET technology generation RC Harrington, JA Maharrey, JS Kauppila, P Nsengiyumva, DR Ball, ... IEEE Transactions on Nuclear Science 65 (8), 1807-1813, 2018 | 24 | 2018 |
| Impact of single-event transient duration and electrical delay at reduced supply voltages on set mitigation techniques JA Maharrey, JS Kauppila, RC Harrington, P Nsengiyumva, DR Ball, ... IEEE Transactions on Nuclear Science 65 (1), 362-368, 2017 | 24 | 2017 |
| Combined effects of total ionizing dose and temperature on a k-band quadrature LC-tank VCO in a 32 nm CMOS SOI technology TD Loveless, S Jagannathan, EX Zhang, DM Fleetwood, JS Kauppila, ... IEEE Transactions on Nuclear Science 64 (1), 204-211, 2016 | 24 | 2016 |
| Exploiting parallelism and heterogeneity in a radiation effects test vehicle for efficient single-event characterization of nanoscale circuits JS Kauppila, JA Maharrey, RC Harrington, TD Haeffner, P Nsengiyumva, ... IEEE Transactions on Nuclear Science 65 (1), 486-494, 2017 | 20 | 2017 |
| A bias-dependent single-event-enabled compact model for bulk FinFET technologies JS Kauppila, DR Ball, JA Maharrey, RC Harrington, TD Haeffner, ... IEEE Transactions on Nuclear Science 66 (3), 635-642, 2019 | 15 | 2019 |
| Dual-interlocked logic for single-event transient mitigation JA Maharrey, JS Kauppila, RC Harrington, P Nsengiyumva, DR Ball, ... IEEE Transactions on Nuclear Science 65 (8), 1872-1878, 2017 | 15 | 2017 |
| Empirical modeling of FinFET SEU cross sections across supply voltage RC Harrington, JS Kauppila, JA Maharrey, TD Haeffner, AL Sternberg, ... IEEE Transactions on Nuclear Science 66 (7), 1427-1432, 2019 | 13 | 2019 |
| Mitigating total-ionizing-dose-induced threshold-voltage shifts using back-gate biasing in 22-nm FD-SOI transistors AC Watkins, ST Vibbert, JV D’Amico, JS Kauppila, TD Haeffner, DR Ball, ... IEEE Transactions on Nuclear Science 69 (3), 374-380, 2022 | 11 | 2022 |
| Irradiation and temperature effects for a 32 nm RF silicon-on-insulator CMOS process TD Haeffner, TD Loveless, EX Zhang, AL Sternberg, S Jagannathan, ... IEEE Transactions on Nuclear Science 61 (6), 3037-3042, 2014 | 10 | 2014 |
Lloyd MassengillVanderbilt Universityایمیل تأیید شده در vanderbilt.edu
