| Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration C Yuan, J Li, L Lindsay, D Cherns, JW Pomeroy, S Liu, JH Edgar, ... Communications physics 2 (1), 43, 2019 | 227 | 2019 |
| Benchmarking of thermal boundary resistance in AlGaN/GaN HEMTs on SiC substrates: Implications of the nucleation layer microstructure A Manoi, JW Pomeroy, N Killat, M Kuball IEEE electron device letters 31 (12), 1395-1397, 2010 | 226 | 2010 |
| Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications H Sun, RB Simon, JW Pomeroy, D Francis, F Faili, DJ Twitchen, M Kuball Applied Physics Letters 106 (11), 2015 | 208 | 2015 |
| Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping JW Pomeroy, M Bernardoni, DC Dumka, DM Fanning, M Kuball Applied Physics Letters 104 (8), 2014 | 204 | 2014 |
| Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy M Kuball, GJ Riedel, JW Pomeroy, A Sarua, MJ Uren, T Martin, KP Hilton, ... IEEE electron device letters 28 (2), 86-89, 2007 | 173 | 2007 |
| Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs Y Zhou, R Ramaneti, J Anaya, S Korneychuk, J Derluyn, H Sun, ... Applied Physics Letters 111 (4), 2017 | 150 | 2017 |
| A review of Raman thermography for electronic and opto-electronic device measurement with submicron spatial and nanosecond temporal resolution M Kuball, JW Pomeroy IEEE Transactions on Device and Materials Reliability 16 (4), 667-684, 2016 | 148 | 2016 |
| Channel temperature determination in high-power AlGaN/GaN HFETs using electrical methods and Raman spectroscopy RJT Simms, JW Pomeroy, MJ Uren, T Martin, M Kuball IEEE Transactions on Electron Devices 55 (2), 478-482, 2008 | 147 | 2008 |
| Barrier-layer optimization for enhanced GaN-on-diamond device cooling Y Zhou, J Anaya, J Pomeroy, H Sun, X Gu, A Xie, E Beam, M Becker, ... ACS applied materials & interfaces 9 (39), 34416-34422, 2017 | 132 | 2017 |
| Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs S Rajasingam, JW Pomeroy, M Kuball, MJ Uren, T Martin, DC Herbert, ... IEEE Electron Device Letters 25 (7), 456-458, 2004 | 130 | 2004 |
| Phonon lifetimes and phonon decay in InN JW Pomeroy, M Kuball, H Lu, WJ Schaff, X Wang, A Yoshikawa Applied Physics Letters 86 (22), 2005 | 107 | 2005 |
| Reducing thermal resistance of AlGaN/GaN electronic devices using novel nucleation layers GJ Riedel, JW Pomeroy, KP Hilton, JO Maclean, DJ Wallis, MJ Uren, ... IEEE Electron Device Letters 30 (2), 103-106, 2008 | 103 | 2008 |
| Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy T Batten, JW Pomeroy, MJ Uren, T Martin, M Kuball Journal of Applied Physics 106 (9), 2009 | 88 | 2009 |
| Electrical and thermal performance of AlGaN/GaN HEMTs on diamond substrate for RF applications DC Dumka, TM Chou, JL Jimenez, DM Fanning, D Francis, F Faili, ... 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2013 | 85 | 2013 |
| Thermal properties of AlGaN/GaN HFETs on bulk GaN substrates N Killat, M Montes, JW Pomeroy, T Paskova, KR Evans, J Leach, X Li, ... IEEE Electron device letters 33 (3), 366-368, 2012 | 85 | 2012 |
| Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing JW Pomeroy, MJ Uren, B Lambert, M Kuball Microelectronics Reliability 55 (12), 2505-2510, 2015 | 82 | 2015 |
| Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs M Singh, MA Casbon, MJ Uren, JW Pomeroy, S Dalcanale, S Karboyan, ... IEEE Electron Device Letters 39 (10), 1572-1575, 2018 | 81 | 2018 |
| Temperature-dependent thermal resistance of GaN-on-diamond HEMT wafers H Sun, JW Pomeroy, RB Simon, D Francis, F Faili, DJ Twitchen, M Kuball IEEE Electron Device Letters 37 (5), 621-624, 2016 | 79 | 2016 |
| Raman Thermography of Peak Channel Temperature in -Ga2O3 MOSFETs JW Pomeroy, C Middleton, M Singh, S Dalcanale, MJ Uren, MH Wong, ... IEEE Electron Device Letters 40 (2), 189-192, 2018 | 74 | 2018 |
| Achieving the best thermal performance for GaN-on-diamond J Pomeroy, M Bernardoni, A Sarua, A Manoi, DC Dumka, DM Fanning, ... 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2013 | 73 | 2013 |
