| On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration S Takagi, A Toriumi, M Iwase, H Tango IEEE Transactions on Electron Devices 41 (12), 2357-2362, 1994 | 1703 | 1994 |
| Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors S Takagi, JL Hoyt, JJ Welser, JF Gibbons Journal of Applied Physics 80 (3), 1567-1577, 1996 | 617 | 1996 |
| Method of manufacturing a substrate using an SiGe layer N Sugiyama, A Kurobe, T Tezuka, T Mizuno, S Takagi US Patent 6,607,948, 2003 | 565 | 2003 |
| On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation S Takagi, A Toriumi, M Iwase, H Tango IEEE Transactions on Electron Devices 41 (12), 2363-2368, 1994 | 466 | 1994 |
| Carrier-transport-enhanced channel CMOS for improved power consumption and performance S Takagi, T Iisawa, T Tezuka, T Numata, S Nakaharai, N Hirashita, ... IEEE transactions on electron devices 55 (1), 21-39, 2007 | 441 | 2007 |
| Evidence of low interface trap density in GeO2∕ Ge metal-oxide-semiconductor structures fabricated by thermal oxidation H Matsubara, T Sasada, M Takenaka, S Takagi Applied physics letters 93 (3), 2008 | 413 | 2008 |
| Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction T Tezuka, N Sugiyama, S Takagi Applied Physics Letters 79 (12), 1798-1800, 2001 | 401 | 2001 |
| Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique S Nakaharai, T Tezuka, N Sugiyama, Y Moriyama, S Takagi Applied Physics Letters 83 (17), 3516-3518, 2003 | 352 | 2003 |
| Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm K Uchida, H Watanabe, A Kinoshita, J Koga, T Numata, S Takagi Digest. International Electron Devices Meeting,, 47-50, 2002 | 334 | 2002 |
| Strain dependence of the performance enhancement in strained-Si n-MOSFETs J Welser, JL Hoyt, SI Takagi, JF Gibbons Proceedings of 1994 IEEE International Electron Devices Meeting, 373-376, 1994 | 327 | 1994 |
| Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology T Mizuno, S Takagi, N Sugiyama, H Satake, A Kurobe, A Toriumi IEEE Electron Device Letters 21 (5), 230-232, 2000 | 296 | 2000 |
| Bending experiment on pentacene field-effect transistors on plastic films T Sekitani, Y Kato, S Iba, H Shinaoka, T Someya, T Sakurai, S Takagi Applied Physics Letters 86 (7), 2005 | 286 | 2005 |
| High-Mobility Ge pMOSFET With 1-nm EOT Gate Stack Fabricated by Plasma Post Oxidation R Zhang, T Iwasaki, N Taoka, M Takenaka, S Takagi IEEE Transactions on Electron Devices 59 (2), 335-341, 2011 | 283* | 2011 |
| A novel fabrication technique of ultrathin and relaxed SiGe buffer layers with high Ge fraction for sub-100 nm strained silicon-on-insulator MOSFETs T Tezuka, N Sugiyama, T Mizuno, M Suzuki, S Takagi Japanese Journal of Applied Physics 40 (4S), 2866, 2001 | 278 | 2001 |
| Semiconductor device S Takagi US Patent 6,339,232, 2002 | 253 | 2002 |
| Semiconductor device N Sugiyama, T Tezuka, T Mizuno, S Takagi US Patent 6,774,390, 2004 | 252 | 2004 |
| Efficient low-loss InGaAsP/Si hybrid MOS optical modulator JH Han, F Boeuf, J Fujikata, S Takahashi, S Takagi, M Takenaka Nature Photonics 11 (8), 486-490, 2017 | 238 | 2017 |
| High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using Gate Stacks Fabricated by Plasma Postoxidation R Zhang, PC Huang, JC Lin, N Taoka, M Takenaka, S Takagi IEEE Transactions on Electron Devices 60 (3), 927-934, 2013 | 234 | 2013 |
| The future transistors W Cao, H Bu, M Vinet, M Cao, S Takagi, S Hwang, T Ghani, K Banerjee Nature 620 (7974), 501-515, 2023 | 227 | 2023 |
| Experimental evidence of inelastic tunneling in stress-induced leakage current S Takagi, N Yasuda, A Toriumi IEEE Transactions on Electron Devices 46 (2), 335-341, 2002 | 221 | 2002 |